Further studies on the effect of SiNx refractive index and emitter sheet resistance on potential-induced degradation

Jaewon Oh, Bill Dauksher, Stuart Bowden, Govindasamy Tamizhmani, Peter Hacke, John D'Amico

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emitter sheet resistance increases. To verify the effect of refractive index on PID-s, we fabricated cells with varying SiNx refractive index (1.87, 1.94, 2.05) on typical p-type base solar cells with ∼60 /sq emitters. However, none of these cells showed output power degradation, regardless of the refractive index. Further investigation of the emitter showed that the PID-s was suppressed at ∼60 /sq due to the extremely high surface phosphorus concentration (6 × 1021 cm-3), as measured by secondary ion mass spectrometry. Furthermore, PID-s was observed on cells possessing a high emitter sheet resistance (∼80 /sq). The emitter surface phosphorus concentration plays an important role in determining PID-s susceptibility.

Original languageEnglish (US)
Article number7814277
Pages (from-to)437-443
Number of pages7
JournalIEEE Journal of Photovoltaics
Volume7
Issue number2
DOIs
StatePublished - Mar 1 2017

Keywords

  • Durability
  • high voltage
  • potential-induced degradation (PID)
  • reliability
  • sheet resistance
  • silicon nitride (SiNx ).

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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