Further studies on the effect of SiNx refractive index and emitter sheet resistance on potential-induced degradation

Jaewon Oh, Bill Dauksher, Stuart Bowden, Govindasamy Tamizhmani, Peter Hacke, John D'Amico

Research output: Research - peer-reviewArticle

  • 2 Citations

Abstract

We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emitter sheet resistance increases. To verify the effect of refractive index on PID-s, we fabricated cells with varying SiNx refractive index (1.87, 1.94, 2.05) on typical p-type base solar cells with ∼60 /sq emitters. However, none of these cells showed output power degradation, regardless of the refractive index. Further investigation of the emitter showed that the PID-s was suppressed at ∼60 /sq due to the extremely high surface phosphorus concentration (6 × 1021 cm-3), as measured by secondary ion mass spectrometry. Furthermore, PID-s was observed on cells possessing a high emitter sheet resistance (∼80 /sq). The emitter surface phosphorus concentration plays an important role in determining PID-s susceptibility.

LanguageEnglish (US)
Article number7814277
Pages437-443
Number of pages7
JournalIEEE Journal of Photovoltaics
Volume7
Issue number2
DOIs
StatePublished - Mar 1 2017

Fingerprint

emitters
refractivity
degradation
Sheet resistance
Refractive index
Degradation
cells
phosphorus
Phosphorus
antireflection coatings
silicon nitrides
secondary ion mass spectrometry
solar cells
magnetic permeability
output
Antireflection coatings
Secondary ion mass spectrometry
Solar cells
silicon nitride
Silicon nitride

Keywords

  • Durability
  • high voltage
  • potential-induced degradation (PID)
  • reliability
  • sheet resistance
  • silicon nitride (SiNx ).

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Further studies on the effect of SiNx refractive index and emitter sheet resistance on potential-induced degradation. / Oh, Jaewon; Dauksher, Bill; Bowden, Stuart; Tamizhmani, Govindasamy; Hacke, Peter; D'Amico, John.

In: IEEE Journal of Photovoltaics, Vol. 7, No. 2, 7814277, 01.03.2017, p. 437-443.

Research output: Research - peer-reviewArticle

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