@inproceedings{dec1bc38a10a4bae9c4b94ba41f2611e,
title = "Fundamental mechanisms of electroluminescence refrigeration in heterostructure light emitting diodes",
abstract = "The fundamental mechanisms of electroluminescence (EL) refrigeration in heterostructure light emitting diodes, is examined via carrier energy loss (and gain) during transport, relaxation, and recombination, where the contribution of electrons and holes are treated separately. This analysis shows that the EL refrigeration process is a combination of thermoelectric cooling that mainly occurs near the metal/semiconductor contacts and radiative recombination which mainly occurs in the active region. In semiconductors such as GaAs, electrons and holes make different contributions to the refrigeration processes as a result of their different densities of states.",
keywords = "Electroluminescence refrigeration, Semiconductor optical refrigeration",
author = "Yu, {S. Q.} and Wang, {J. B.} and D. Ding and Shane Johnson and Dragica Vasileska and Yong-Hang Zhang",
year = "2007",
doi = "10.1117/12.701301",
language = "English (US)",
isbn = "0819465992",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "Light-Emitting Diodes",
note = "Light-Emitting Diodes: Research, Manufacturing, and Applications XI ; Conference date: 24-01-2007 Through 25-01-2007",
}