Fullband particle-based simulation of optical excitation in Silicon pin diodes

S. Wigger-Aboud, Marco Saraniti, Stephen Goodnick, A. Brodschelm, A. Leitenstorfer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, a fullband particle-based simulator is used to model optical excitation in silicon. This work is motivated by previous simulations of transient transport in III-V material as well as recent experimental measurements of optically excited Si pin diodes. The simulation results show evidence of velocity overshoot at high fields (≥100 kV/cm) which is not present in the experiment. Further simulations show that the influence of lattice temperature may be responsible for the discrepancy.

Original languageEnglish (US)
Title of host publication2003 Nanotechnology Conference and Trade Show - Nanotech 2003
EditorsM. Laudon, B. Romanowicz
Pages28-31
Number of pages4
StatePublished - Dec 1 2003
Event2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
Duration: Feb 23 2003Feb 27 2003

Publication series

Name2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Volume2

Other

Other2003 Nanotechnology Conference and Trade Show - Nanotech 2003
CountryUnited States
CitySan Francisco, CA
Period2/23/032/27/03

Keywords

  • Fullband particle-based simulator
  • Optical excitation
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Fullband particle-based simulation of optical excitation in Silicon pin diodes'. Together they form a unique fingerprint.

  • Cite this

    Wigger-Aboud, S., Saraniti, M., Goodnick, S., Brodschelm, A., & Leitenstorfer, A. (2003). Fullband particle-based simulation of optical excitation in Silicon pin diodes. In M. Laudon, & B. Romanowicz (Eds.), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003 (pp. 28-31). (2003 Nanotechnology Conference and Trade Show - Nanotech 2003; Vol. 2).