Fullband particle-based simulation of optical excitation in Silicon pin diodes

S. Wigger-Aboud; Marco Saraniti; Stephen Goodnick; A. Brodschelm; A. Leitenstorfer

Fullband particle-based simulation of optical excitation in Silicon pin diodes

S. Wigger-Aboud, Marco Saraniti, Stephen Goodnick, A. Brodschelm, A. Leitenstorfer

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this study, a fullband particle-based simulator is used to model optical excitation in silicon. This work is motivated by previous simulations of transient transport in III-V material as well as recent experimental measurements of optically excited Si pin diodes. The simulation results show evidence of velocity overshoot at high fields (≥100 kV/cm) which is not present in the experiment. Further simulations show that the influence of lattice temperature may be responsible for the discrepancy.

Original language	English (US)
Title of host publication	2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Editors	M. Laudon, B. Romanowicz
Pages	28-31
Number of pages	4
State	Published - 2003
Event	2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States Duration: Feb 23 2003 → Feb 27 2003

Publication series

Name	2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Volume	2

Other

Other	2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Country/Territory	United States
City	San Francisco, CA
Period	2/23/03 → 2/27/03

Keywords

Fullband particle-based simulator
Optical excitation
Silicon

ASJC Scopus subject areas

General Engineering

Cite this

Fullband particle-based simulation of optical excitation in Silicon pin diodes. / Wigger-Aboud, S.; Saraniti, Marco ; Goodnick, Stephen et al.
2003 Nanotechnology Conference and Trade Show - Nanotech 2003. ed. / M. Laudon; B. Romanowicz. 2003. p. 28-31 (2003 Nanotechnology Conference and Trade Show - Nanotech 2003; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wigger-Aboud, S, Saraniti, M , Goodnick, S, Brodschelm, A & Leitenstorfer, A 2003, Fullband particle-based simulation of optical excitation in Silicon pin diodes. in M Laudon & B Romanowicz (eds), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. 2003 Nanotechnology Conference and Trade Show - Nanotech 2003, vol. 2, pp. 28-31, 2003 Nanotechnology Conference and Trade Show - Nanotech 2003, San Francisco, CA, United States, 2/23/03.

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PY - 2003

Y1 - 2003

N2 - In this study, a fullband particle-based simulator is used to model optical excitation in silicon. This work is motivated by previous simulations of transient transport in III-V material as well as recent experimental measurements of optically excited Si pin diodes. The simulation results show evidence of velocity overshoot at high fields (≥100 kV/cm) which is not present in the experiment. Further simulations show that the influence of lattice temperature may be responsible for the discrepancy.

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M3 - Conference contribution

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BT - 2003 Nanotechnology Conference and Trade Show - Nanotech 2003

A2 - Laudon, M.

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T2 - 2003 Nanotechnology Conference and Trade Show - Nanotech 2003

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ER -

Fullband particle-based simulation of optical excitation in Silicon pin diodes

Abstract

Publication series

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Keywords

ASJC Scopus subject areas

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