Fullband particle-based simulation of optical excitation in Silicon pin diodes

S. Wigger-Aboud, Marco Saraniti, Stephen Goodnick, A. Brodschelm, A. Leitenstorfer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, a fullband particle-based simulator is used to model optical excitation in silicon. This work is motivated by previous simulations of transient transport in III-V material as well as recent experimental measurements of optically excited Si pin diodes. The simulation results show evidence of velocity overshoot at high fields (≥100 kV/cm) which is not present in the experiment. Further simulations show that the influence of lattice temperature may be responsible for the discrepancy.

Original languageEnglish (US)
Title of host publication2003 Nanotechnology Conference and Trade Show - Nanotech 2003
EditorsM. Laudon, B. Romanowicz
Pages28-31
Number of pages4
Volume2
StatePublished - 2003
Event2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
Duration: Feb 23 2003Feb 27 2003

Other

Other2003 Nanotechnology Conference and Trade Show - Nanotech 2003
CountryUnited States
CitySan Francisco, CA
Period2/23/032/27/03

Fingerprint

Photoexcitation
Diodes
Simulators
Silicon
Experiments
Temperature

Keywords

  • Fullband particle-based simulator
  • Optical excitation
  • Silicon

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Wigger-Aboud, S., Saraniti, M., Goodnick, S., Brodschelm, A., & Leitenstorfer, A. (2003). Fullband particle-based simulation of optical excitation in Silicon pin diodes. In M. Laudon, & B. Romanowicz (Eds.), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003 (Vol. 2, pp. 28-31)

Fullband particle-based simulation of optical excitation in Silicon pin diodes. / Wigger-Aboud, S.; Saraniti, Marco; Goodnick, Stephen; Brodschelm, A.; Leitenstorfer, A.

2003 Nanotechnology Conference and Trade Show - Nanotech 2003. ed. / M. Laudon; B. Romanowicz. Vol. 2 2003. p. 28-31.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wigger-Aboud, S, Saraniti, M, Goodnick, S, Brodschelm, A & Leitenstorfer, A 2003, Fullband particle-based simulation of optical excitation in Silicon pin diodes. in M Laudon & B Romanowicz (eds), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. vol. 2, pp. 28-31, 2003 Nanotechnology Conference and Trade Show - Nanotech 2003, San Francisco, CA, United States, 2/23/03.
Wigger-Aboud S, Saraniti M, Goodnick S, Brodschelm A, Leitenstorfer A. Fullband particle-based simulation of optical excitation in Silicon pin diodes. In Laudon M, Romanowicz B, editors, 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. Vol. 2. 2003. p. 28-31
Wigger-Aboud, S. ; Saraniti, Marco ; Goodnick, Stephen ; Brodschelm, A. ; Leitenstorfer, A. / Fullband particle-based simulation of optical excitation in Silicon pin diodes. 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. editor / M. Laudon ; B. Romanowicz. Vol. 2 2003. pp. 28-31
@inproceedings{d73eb38eaa3b49e08c552216ed79e57b,
title = "Fullband particle-based simulation of optical excitation in Silicon pin diodes",
abstract = "In this study, a fullband particle-based simulator is used to model optical excitation in silicon. This work is motivated by previous simulations of transient transport in III-V material as well as recent experimental measurements of optically excited Si pin diodes. The simulation results show evidence of velocity overshoot at high fields (≥100 kV/cm) which is not present in the experiment. Further simulations show that the influence of lattice temperature may be responsible for the discrepancy.",
keywords = "Fullband particle-based simulator, Optical excitation, Silicon",
author = "S. Wigger-Aboud and Marco Saraniti and Stephen Goodnick and A. Brodschelm and A. Leitenstorfer",
year = "2003",
language = "English (US)",
isbn = "0972842209",
volume = "2",
pages = "28--31",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003",

}

TY - GEN

T1 - Fullband particle-based simulation of optical excitation in Silicon pin diodes

AU - Wigger-Aboud, S.

AU - Saraniti, Marco

AU - Goodnick, Stephen

AU - Brodschelm, A.

AU - Leitenstorfer, A.

PY - 2003

Y1 - 2003

N2 - In this study, a fullband particle-based simulator is used to model optical excitation in silicon. This work is motivated by previous simulations of transient transport in III-V material as well as recent experimental measurements of optically excited Si pin diodes. The simulation results show evidence of velocity overshoot at high fields (≥100 kV/cm) which is not present in the experiment. Further simulations show that the influence of lattice temperature may be responsible for the discrepancy.

AB - In this study, a fullband particle-based simulator is used to model optical excitation in silicon. This work is motivated by previous simulations of transient transport in III-V material as well as recent experimental measurements of optically excited Si pin diodes. The simulation results show evidence of velocity overshoot at high fields (≥100 kV/cm) which is not present in the experiment. Further simulations show that the influence of lattice temperature may be responsible for the discrepancy.

KW - Fullband particle-based simulator

KW - Optical excitation

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=6344229574&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344229574&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:6344229574

SN - 0972842209

VL - 2

SP - 28

EP - 31

BT - 2003 Nanotechnology Conference and Trade Show - Nanotech 2003

A2 - Laudon, M.

A2 - Romanowicz, B.

ER -