Abstract
A semiconductor laser model is presented, which resolves the full time, longitudinal and lateral space dependences. The model is applied to an investigation of the dynamical stability of an integrated master-oscillator power-amplifier (MOPA) device. The model captures the full gain and refractive index bandwidth as a function of total carrier density. Our simulation confirms, for the first time, some recent experimental observations of high frequency whole beam oscillations and experimental reports that complex transverse filamentation occurs at high power amplifier currents.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 731-733 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 9 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 1997 |
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Keywords
- Distributed Bragg reflector lasers
- Laser amplifiers
- Laser stability
- Modeling
- Optical propagation in nonlinear media
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy (miscellaneous)
Cite this
Full space-time simulation for high-brightness semiconductor lasers. / Moloney, J. V.; Indik, R. A.; Ning, Cun-Zheng.
In: IEEE Photonics Technology Letters, Vol. 9, No. 6, 06.1997, p. 731-733.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Full space-time simulation for high-brightness semiconductor lasers
AU - Moloney, J. V.
AU - Indik, R. A.
AU - Ning, Cun-Zheng
PY - 1997/6
Y1 - 1997/6
N2 - A semiconductor laser model is presented, which resolves the full time, longitudinal and lateral space dependences. The model is applied to an investigation of the dynamical stability of an integrated master-oscillator power-amplifier (MOPA) device. The model captures the full gain and refractive index bandwidth as a function of total carrier density. Our simulation confirms, for the first time, some recent experimental observations of high frequency whole beam oscillations and experimental reports that complex transverse filamentation occurs at high power amplifier currents.
AB - A semiconductor laser model is presented, which resolves the full time, longitudinal and lateral space dependences. The model is applied to an investigation of the dynamical stability of an integrated master-oscillator power-amplifier (MOPA) device. The model captures the full gain and refractive index bandwidth as a function of total carrier density. Our simulation confirms, for the first time, some recent experimental observations of high frequency whole beam oscillations and experimental reports that complex transverse filamentation occurs at high power amplifier currents.
KW - Distributed Bragg reflector lasers
KW - Laser amplifiers
KW - Laser stability
KW - Modeling
KW - Optical propagation in nonlinear media
KW - Semiconductor lasers
UR - http://www.scopus.com/inward/record.url?scp=0031168274&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031168274&partnerID=8YFLogxK
U2 - 10.1109/68.584972
DO - 10.1109/68.584972
M3 - Article
AN - SCOPUS:0031168274
VL - 9
SP - 731
EP - 733
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 6
ER -