Abstract

A semiconductor laser model is presented, which resolves the full time, longitudinal and lateral space dependences. The model is applied to an investigation of the dynamical stability of an integrated master-oscillator power-amplifier (MOPA) device. The model captures the full gain and refractive index bandwidth as a function of total carrier density. Our simulation confirms, for the first time, some recent experimental observations of high frequency whole beam oscillations and experimental reports that complex transverse filamentation occurs at high power amplifier currents.

Original languageEnglish (US)
Pages (from-to)731-733
Number of pages3
JournalIEEE Photonics Technology Letters
Volume9
Issue number6
DOIs
StatePublished - Jun 1997

Fingerprint

Semiconductor lasers
Luminance
brightness
semiconductor lasers
power amplifiers
Power amplifiers
simulation
Carrier concentration
Refractive index
oscillators
refractivity
bandwidth
Bandwidth
oscillations

Keywords

  • Distributed Bragg reflector lasers
  • Laser amplifiers
  • Laser stability
  • Modeling
  • Optical propagation in nonlinear media
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

Full space-time simulation for high-brightness semiconductor lasers. / Moloney, J. V.; Indik, R. A.; Ning, Cun-Zheng.

In: IEEE Photonics Technology Letters, Vol. 9, No. 6, 06.1997, p. 731-733.

Research output: Contribution to journalArticle

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