Full space-time simulation for high-brightness semiconductor lasers

J. V. Moloney; R. A. Indik; Cun-Zheng Ning

doi:10.1109/68.584972

Full space-time simulation for high-brightness semiconductor lasers

J. V. Moloney, R. A. Indik, Cun-Zheng Ning

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

A semiconductor laser model is presented, which resolves the full time, longitudinal and lateral space dependences. The model is applied to an investigation of the dynamical stability of an integrated master-oscillator power-amplifier (MOPA) device. The model captures the full gain and refractive index bandwidth as a function of total carrier density. Our simulation confirms, for the first time, some recent experimental observations of high frequency whole beam oscillations and experimental reports that complex transverse filamentation occurs at high power amplifier currents.

Original language	English (US)
Pages (from-to)	731-733
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	9
Issue number	6
DOIs	https://doi.org/10.1109/68.584972
State	Published - Jun 1997

Keywords

Distributed Bragg reflector lasers
Laser amplifiers
Laser stability
Modeling
Optical propagation in nonlinear media
Semiconductor lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/68.584972

Fingerprint Dive into the research topics of 'Full space-time simulation for high-brightness semiconductor lasers'. Together they form a unique fingerprint.

Cite this

@article{04f26ec82fae4193b8bf86c0b109ae07,

title = "Full space-time simulation for high-brightness semiconductor lasers",

abstract = "A semiconductor laser model is presented, which resolves the full time, longitudinal and lateral space dependences. The model is applied to an investigation of the dynamical stability of an integrated master-oscillator power-amplifier (MOPA) device. The model captures the full gain and refractive index bandwidth as a function of total carrier density. Our simulation confirms, for the first time, some recent experimental observations of high frequency whole beam oscillations and experimental reports that complex transverse filamentation occurs at high power amplifier currents.",

keywords = "Distributed Bragg reflector lasers, Laser amplifiers, Laser stability, Modeling, Optical propagation in nonlinear media, Semiconductor lasers",

author = "Moloney, {J. V.} and Indik, {R. A.} and Cun-Zheng Ning",

note = "Funding Information: Manuscript received December 30, 1996; revised February 12, 1997. This work was supported by the Air Force Office of Scientific Research, Air Force Material Command, USAF, under Grant F49620-94-1-0144 and Grant F49620-94-1-0463. The authors are with the Arizona Center for Mathematical Sciences, University of Arizona, Tucson, AZ 85721 USA. Publisher Item Identifier S 1041-1135(97)04081-0.",

year = "1997",

month = jun,

doi = "10.1109/68.584972",

language = "English (US)",

volume = "9",

pages = "731--733",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Full space-time simulation for high-brightness semiconductor lasers

AU - Moloney, J. V.

AU - Indik, R. A.

AU - Ning, Cun-Zheng

N1 - Funding Information: Manuscript received December 30, 1996; revised February 12, 1997. This work was supported by the Air Force Office of Scientific Research, Air Force Material Command, USAF, under Grant F49620-94-1-0144 and Grant F49620-94-1-0463. The authors are with the Arizona Center for Mathematical Sciences, University of Arizona, Tucson, AZ 85721 USA. Publisher Item Identifier S 1041-1135(97)04081-0.

PY - 1997/6

Y1 - 1997/6

N2 - A semiconductor laser model is presented, which resolves the full time, longitudinal and lateral space dependences. The model is applied to an investigation of the dynamical stability of an integrated master-oscillator power-amplifier (MOPA) device. The model captures the full gain and refractive index bandwidth as a function of total carrier density. Our simulation confirms, for the first time, some recent experimental observations of high frequency whole beam oscillations and experimental reports that complex transverse filamentation occurs at high power amplifier currents.

AB - A semiconductor laser model is presented, which resolves the full time, longitudinal and lateral space dependences. The model is applied to an investigation of the dynamical stability of an integrated master-oscillator power-amplifier (MOPA) device. The model captures the full gain and refractive index bandwidth as a function of total carrier density. Our simulation confirms, for the first time, some recent experimental observations of high frequency whole beam oscillations and experimental reports that complex transverse filamentation occurs at high power amplifier currents.

KW - Distributed Bragg reflector lasers

KW - Laser amplifiers

KW - Laser stability

KW - Modeling

KW - Optical propagation in nonlinear media

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=0031168274&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031168274&partnerID=8YFLogxK

U2 - 10.1109/68.584972

DO - 10.1109/68.584972

M3 - Article

AN - SCOPUS:0031168274

VL - 9

SP - 731

EP - 733

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 6

ER -