Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors

Niels Fitzer, Angelika Kuligk, Ronald Redmer, Martin Städele, Stephen Goodnick, Wolfgang Schattke

Research output: Contribution to journalArticle

5 Scopus citations


We perform ab initio band structure calculations within density functional theory using an exact exchange formalism and a local density approximation for correlations. Ensemble Monte Carlo simulations consider all relevant scattering mechanisms including a realistic impact ionization rate. This full-band ensemble Monte Carlo method is applied to study the high-field electron transport. Results can be given for the total electron-phonon scattering rate, the drift velocity, the mean kinetic energy, the valley occupations and the ionization coefficient. We show here exemplary results for the wide band-gap materials ZnS and GaN.

Original languageEnglish (US)
Pages (from-to)S206-S208
JournalSemiconductor Science and Technology
Issue number4 SPEC. ISS.
StatePublished - Apr 1 2004


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this