Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors

Niels Fitzer; Angelika Kuligk; Ronald Redmer; Martin Städele; Stephen Goodnick; Wolfgang Schattke

doi:10.1088/0268-1242/19/4/070

Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors

Niels Fitzer, Angelika Kuligk, Ronald Redmer, Martin Städele, Stephen Goodnick, Wolfgang Schattke

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We perform ab initio band structure calculations within density functional theory using an exact exchange formalism and a local density approximation for correlations. Ensemble Monte Carlo simulations consider all relevant scattering mechanisms including a realistic impact ionization rate. This full-band ensemble Monte Carlo method is applied to study the high-field electron transport. Results can be given for the total electron-phonon scattering rate, the drift velocity, the mean kinetic energy, the valley occupations and the ionization coefficient. We show here exemplary results for the wide band-gap materials ZnS and GaN.

Original language	English (US)
Pages (from-to)	S206-S208
Journal	Semiconductor Science and Technology
Volume	19
Issue number	4 SPEC. ISS.
DOIs	https://doi.org/10.1088/0268-1242/19/4/070
State	Published - Apr 1 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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@article{7bed483368a7401fa98356f99f70bea9,

title = "Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors",

abstract = "We perform ab initio band structure calculations within density functional theory using an exact exchange formalism and a local density approximation for correlations. Ensemble Monte Carlo simulations consider all relevant scattering mechanisms including a realistic impact ionization rate. This full-band ensemble Monte Carlo method is applied to study the high-field electron transport. Results can be given for the total electron-phonon scattering rate, the drift velocity, the mean kinetic energy, the valley occupations and the ionization coefficient. We show here exemplary results for the wide band-gap materials ZnS and GaN.",

author = "Niels Fitzer and Angelika Kuligk and Ronald Redmer and Martin St{\"a}dele and Stephen Goodnick and Wolfgang Schattke",

year = "2004",

month = apr,

day = "1",

doi = "10.1088/0268-1242/19/4/070",

language = "English (US)",

volume = "19",

pages = "S206--S208",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "4 SPEC. ISS.",

}

TY - JOUR

T1 - Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors

AU - Fitzer, Niels

AU - Kuligk, Angelika

AU - Redmer, Ronald

AU - Städele, Martin

AU - Goodnick, Stephen

AU - Schattke, Wolfgang

PY - 2004/4/1

Y1 - 2004/4/1

N2 - We perform ab initio band structure calculations within density functional theory using an exact exchange formalism and a local density approximation for correlations. Ensemble Monte Carlo simulations consider all relevant scattering mechanisms including a realistic impact ionization rate. This full-band ensemble Monte Carlo method is applied to study the high-field electron transport. Results can be given for the total electron-phonon scattering rate, the drift velocity, the mean kinetic energy, the valley occupations and the ionization coefficient. We show here exemplary results for the wide band-gap materials ZnS and GaN.

AB - We perform ab initio band structure calculations within density functional theory using an exact exchange formalism and a local density approximation for correlations. Ensemble Monte Carlo simulations consider all relevant scattering mechanisms including a realistic impact ionization rate. This full-band ensemble Monte Carlo method is applied to study the high-field electron transport. Results can be given for the total electron-phonon scattering rate, the drift velocity, the mean kinetic energy, the valley occupations and the ionization coefficient. We show here exemplary results for the wide band-gap materials ZnS and GaN.

UR - http://www.scopus.com/inward/record.url?scp=1942516819&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1942516819&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/19/4/070

DO - 10.1088/0268-1242/19/4/070

M3 - Article

AN - SCOPUS:1942516819

SN - 0268-1242

VL - 19

SP - S206-S208

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 4 SPEC. ISS.

ER -

Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors

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