TY - GEN
T1 - Frequency analysis of GaN MESFETs using full-band cellular Monte Carlo
AU - Yamakawa, S.
AU - Goodnick, Stephen
AU - Branlard, J.
AU - Saraniti, Marco
PY - 2005
Y1 - 2005
N2 - A full-band electron transport calculation in wurtzite phase GaN based on a detailed model of the electron-phonon interactions using a Cellular Monte Carlo (CMC) approach is applied to the frequency analysis of MESFETs. Realistic polar-optical phonon, impurity, piezoelectric and dislocation scattering is included in the full-band CMC simulator, which shows good agreement with measured velocity-field data. The effect of the dislocation scattering on the MESFET RF characteristics is examined as well, indicating that the computed cut-off frequency is affected by the crystal dislocation density and bias conditions.
AB - A full-band electron transport calculation in wurtzite phase GaN based on a detailed model of the electron-phonon interactions using a Cellular Monte Carlo (CMC) approach is applied to the frequency analysis of MESFETs. Realistic polar-optical phonon, impurity, piezoelectric and dislocation scattering is included in the full-band CMC simulator, which shows good agreement with measured velocity-field data. The effect of the dislocation scattering on the MESFET RF characteristics is examined as well, indicating that the computed cut-off frequency is affected by the crystal dislocation density and bias conditions.
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U2 - 10.1002/pssc.200461525
DO - 10.1002/pssc.200461525
M3 - Conference contribution
AN - SCOPUS:27344452010
VL - 2
SP - 2573
EP - 2576
BT - Physica Status Solidi C: Conferences
ER -