Abstract

A full-band electron transport calculation in wurtzite phase GaN based on a detailed model of the electron-phonon interactions using a Cellular Monte Carlo (CMC) approach is applied to the frequency analysis of MESFETs. Realistic polar-optical phonon, impurity, piezoelectric and dislocation scattering is included in the full-band CMC simulator, which shows good agreement with measured velocity-field data. The effect of the dislocation scattering on the MESFET RF characteristics is examined as well, indicating that the computed cut-off frequency is affected by the crystal dislocation density and bias conditions.

Original languageEnglish (US)
Title of host publicationPhysica Status Solidi C: Conferences
Pages2573-2576
Number of pages4
Volume2
Edition7
DOIs
StatePublished - 2005

ASJC Scopus subject areas

  • Condensed Matter Physics

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