Flexible amorphous silicon PIN diode x-ray detectors

Michael Marrs, Edward Bawolek, Joseph T. Smith, Gregory Raupp, David Morton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

A low temperature amorphous silicon (a-Si) thin film transistor (TFT) and amorphous silicon PIN photodiode technology for flexible passive pixel detector arrays has been developed using active matrix display technology. The flexible detector arrays can be conformed to non-planar surfaces with the potential to detect x-rays or other radiation with an appropriate conversion layer. The thin, lightweight, and robust backplanes may enable the use of highly portable x-ray detectors for use in the battlefield or in remote locations. We have fabricated detector arrays up to 200 millimeters along the diagonal on a Gen II (370 mm×470 mm rectangular substrate) using plasma enhanced chemical vapor deposition (PECVD) a-Si as the active layer and PECVD silicon nitride (SiN) as the gate dielectric and passivation. The a-Si based TFTs exhibited an effective saturation mobility of 0.7 cm2/V-s, which is adequate for most sensing applications. The PIN diode material was fabricated using a low stress amorphous silicon (a-Si) PECVD process. The PIN diode dark current was 1.7 pA/mm2, the diode ideality factor was 1.36, and the diode fill factor was 0.73. We report on the critical steps in the evolution of the backplane process from qualification of the low temperature (180°C) TFT and PIN diode process on the 150 mm pilot line, the transfer of the process to flexible plastic substrates, and finally a discussion and demonstration of the scale-up to the Gen II (370×470 mm) panel scale pilot line.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8730
DOIs
StatePublished - 2013
EventFlexible Electronics - Baltimore, MD, United States
Duration: May 1 2013May 2 2013

Other

OtherFlexible Electronics
CountryUnited States
CityBaltimore, MD
Period5/1/135/2/13

Fingerprint

X-ray Detectors
x ray detectors
Amorphous Silicon
Amorphous silicon
Diode
amorphous silicon
Diodes
diodes
Chemical Vapor Deposition
Detectors
X rays
Plasma enhanced chemical vapor deposition
Thin-film Transistor
Plasma
Detector
vapor deposition
Thin film transistors
detectors
transistors
Substrate

Keywords

  • A-Si
  • Active matrix
  • Flexible electronics
  • PIN photodiode
  • TFT
  • X-ray detector

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Marrs, M., Bawolek, E., Smith, J. T., Raupp, G., & Morton, D. (2013). Flexible amorphous silicon PIN diode x-ray detectors. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8730). [87300C] https://doi.org/10.1117/12.2015917

Flexible amorphous silicon PIN diode x-ray detectors. / Marrs, Michael; Bawolek, Edward; Smith, Joseph T.; Raupp, Gregory; Morton, David.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8730 2013. 87300C.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Marrs, M, Bawolek, E, Smith, JT, Raupp, G & Morton, D 2013, Flexible amorphous silicon PIN diode x-ray detectors. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8730, 87300C, Flexible Electronics, Baltimore, MD, United States, 5/1/13. https://doi.org/10.1117/12.2015917
Marrs M, Bawolek E, Smith JT, Raupp G, Morton D. Flexible amorphous silicon PIN diode x-ray detectors. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8730. 2013. 87300C https://doi.org/10.1117/12.2015917
Marrs, Michael ; Bawolek, Edward ; Smith, Joseph T. ; Raupp, Gregory ; Morton, David. / Flexible amorphous silicon PIN diode x-ray detectors. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8730 2013.
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