@inproceedings{39cc9ea5c4a2455581f1b9e8ebbdca11,
title = "FinFET reliability issue analysis by forward gated-diode method",
abstract = "The reliability issue of the FinFET device is studied in details in this paper by the forward gated-diode R-G current method. Extraction of the stress induced interface states and oxide traps of FINFET is performed from a series of the R-G current measurement and developed physics expression. As the result, the interface states can be extracted by the relationship between the net increase value of the maximum substrate current (Δ Ipeak) and stress time; and the oxide trap can be reflected by the drift of gate voltage (Δ Vg) corresponding to Δ Ipeak.",
keywords = "FinFET, Interface state, Oxide trap, R-G current, Reliability issue, Stress",
author = "Zhiwei Liu and Cao Yu and Chenyue Ma and Wen Wu and Wenping Wang and Ruonan Wang and Jin He",
year = "2011",
month = nov,
day = "23",
language = "English (US)",
isbn = "9781439871393",
series = "Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011",
pages = "168--171",
booktitle = "Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011",
note = "Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 ; Conference date: 13-06-2011 Through 16-06-2011",
}