FinFET reliability issue analysis by forward gated-diode method

Zhiwei Liu, Yu Cao, Chenyue Ma, Wen Wu, Wenping Wang, Ruonan Wang, Jin He

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The reliability issue of the FinFET device is studied in details in this paper by the forward gated-diode R-G current method. Extraction of the stress induced interface states and oxide traps of FINFET is performed from a series of the R-G current measurement and developed physics expression. As the result, the interface states can be extracted by the relationship between the net increase value of the maximum substrate current (Δ Ipeak) and stress time; and the oxide trap can be reflected by the drift of gate voltage (Δ Vg) corresponding to Δ Ipeak.

Original languageEnglish (US)
Title of host publicationTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Pages168-171
Number of pages4
Volume2
StatePublished - 2011
Externally publishedYes
EventNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States
Duration: Jun 13 2011Jun 16 2011

Other

OtherNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
CountryUnited States
CityBoston, MA
Period6/13/116/16/11

Fingerprint

Interface states
Reliability analysis
Diodes
Oxides
Electric current measurement
Physics
Electric potential
Substrates
FinFET

Keywords

  • FinFET
  • Interface state
  • Oxide trap
  • R-G current
  • Reliability issue
  • Stress

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Liu, Z., Cao, Y., Ma, C., Wu, W., Wang, W., Wang, R., & He, J. (2011). FinFET reliability issue analysis by forward gated-diode method. In Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 (Vol. 2, pp. 168-171)

FinFET reliability issue analysis by forward gated-diode method. / Liu, Zhiwei; Cao, Yu; Ma, Chenyue; Wu, Wen; Wang, Wenping; Wang, Ruonan; He, Jin.

Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. Vol. 2 2011. p. 168-171.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, Z, Cao, Y, Ma, C, Wu, W, Wang, W, Wang, R & He, J 2011, FinFET reliability issue analysis by forward gated-diode method. in Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. vol. 2, pp. 168-171, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011, Boston, MA, United States, 6/13/11.
Liu Z, Cao Y, Ma C, Wu W, Wang W, Wang R et al. FinFET reliability issue analysis by forward gated-diode method. In Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. Vol. 2. 2011. p. 168-171
Liu, Zhiwei ; Cao, Yu ; Ma, Chenyue ; Wu, Wen ; Wang, Wenping ; Wang, Ruonan ; He, Jin. / FinFET reliability issue analysis by forward gated-diode method. Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. Vol. 2 2011. pp. 168-171
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