Film bulk acoustic-wave resonator based relative humidity sensor using ZnO films

Xiaotun Qiu, Jon Oiler, Jie Zhu, Ziyu Wang, Rui Tang, Cunjiang Yu, Hongyu Yu

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

This article described relative humidity (RH) sensing using a ZnO-based film bulk acoustic-wave resonator (FBAR). The resonant frequency of the FBAR decreased in a two-stage manner as the RH increased. For low RH, a frequency downshift of 2.2 kHz per 1% RH change was observed. This effect was attributed to water molecules replacing the adsorbed oxygen on the ZnO surface, thus increasing the density of the film. For high RH, a frequency downshift of 8.5 kHz per 1% RH change was obtained, which was due to the mass loading effect of the water layers formed on the ZnO surface.

Original languageEnglish (US)
JournalElectrochemical and Solid-State Letters
Volume13
Issue number5
DOIs
StatePublished - 2010

Fingerprint

Humidity sensors
humidity
Resonators
Atmospheric humidity
resonators
Acoustic waves
acoustics
sensors
Water
water
resonant frequencies
Natural frequencies
Oxygen
Molecules
oxygen
molecules

ASJC Scopus subject areas

  • Electrochemistry
  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Chemical Engineering(all)
  • Physical and Theoretical Chemistry

Cite this

Film bulk acoustic-wave resonator based relative humidity sensor using ZnO films. / Qiu, Xiaotun; Oiler, Jon; Zhu, Jie; Wang, Ziyu; Tang, Rui; Yu, Cunjiang; Yu, Hongyu.

In: Electrochemical and Solid-State Letters, Vol. 13, No. 5, 2010.

Research output: Contribution to journalArticle

Qiu, Xiaotun ; Oiler, Jon ; Zhu, Jie ; Wang, Ziyu ; Tang, Rui ; Yu, Cunjiang ; Yu, Hongyu. / Film bulk acoustic-wave resonator based relative humidity sensor using ZnO films. In: Electrochemical and Solid-State Letters. 2010 ; Vol. 13, No. 5.
@article{a66b8a948f474dbda8bf29a3cd69f09c,
title = "Film bulk acoustic-wave resonator based relative humidity sensor using ZnO films",
abstract = "This article described relative humidity (RH) sensing using a ZnO-based film bulk acoustic-wave resonator (FBAR). The resonant frequency of the FBAR decreased in a two-stage manner as the RH increased. For low RH, a frequency downshift of 2.2 kHz per 1{\%} RH change was observed. This effect was attributed to water molecules replacing the adsorbed oxygen on the ZnO surface, thus increasing the density of the film. For high RH, a frequency downshift of 8.5 kHz per 1{\%} RH change was obtained, which was due to the mass loading effect of the water layers formed on the ZnO surface.",
author = "Xiaotun Qiu and Jon Oiler and Jie Zhu and Ziyu Wang and Rui Tang and Cunjiang Yu and Hongyu Yu",
year = "2010",
doi = "10.1149/1.3332397",
language = "English (US)",
volume = "13",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "5",

}

TY - JOUR

T1 - Film bulk acoustic-wave resonator based relative humidity sensor using ZnO films

AU - Qiu, Xiaotun

AU - Oiler, Jon

AU - Zhu, Jie

AU - Wang, Ziyu

AU - Tang, Rui

AU - Yu, Cunjiang

AU - Yu, Hongyu

PY - 2010

Y1 - 2010

N2 - This article described relative humidity (RH) sensing using a ZnO-based film bulk acoustic-wave resonator (FBAR). The resonant frequency of the FBAR decreased in a two-stage manner as the RH increased. For low RH, a frequency downshift of 2.2 kHz per 1% RH change was observed. This effect was attributed to water molecules replacing the adsorbed oxygen on the ZnO surface, thus increasing the density of the film. For high RH, a frequency downshift of 8.5 kHz per 1% RH change was obtained, which was due to the mass loading effect of the water layers formed on the ZnO surface.

AB - This article described relative humidity (RH) sensing using a ZnO-based film bulk acoustic-wave resonator (FBAR). The resonant frequency of the FBAR decreased in a two-stage manner as the RH increased. For low RH, a frequency downshift of 2.2 kHz per 1% RH change was observed. This effect was attributed to water molecules replacing the adsorbed oxygen on the ZnO surface, thus increasing the density of the film. For high RH, a frequency downshift of 8.5 kHz per 1% RH change was obtained, which was due to the mass loading effect of the water layers formed on the ZnO surface.

UR - http://www.scopus.com/inward/record.url?scp=77949716946&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949716946&partnerID=8YFLogxK

U2 - 10.1149/1.3332397

DO - 10.1149/1.3332397

M3 - Article

AN - SCOPUS:77949716946

VL - 13

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 5

ER -