Field-induced transient hole transport in an (formula presented)-based p-i-n nanostructure studied by picosecond Raman spectroscopy

Y. Chen, Kong-Thon Tsen, O. F. Sankey, D. K. Ferry

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Electric field-induced transient hole transport in an (formula presented)-based p-i-n nanostructure has been studied by picosecond Raman spectroscopy at (formula presented) Our experimental results demonstrate that at (formula presented) for a 5-ps excitation laser pulse and a hole density of (formula presented) transient hole drift velocity increases from zero to (formula presented) when the applied electric field intensity increases from (formula presented) to 15 kV/cm. The transient hole drift velocity then becomes saturated at (formula presented) for the applied electric field intensity of (formula presented) and up to 65 kV/cm. These experimental results are in good agreement with Monte Carlo simulations. Simultaneous measurements of transient electron drift velocities indicate that transient electron drift velocities are about three times larger than the corresponding transient hole drift velocities.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number19
DOIs
StatePublished - Jan 1 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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