Femtosecond dynamics of non-thermal holes in n-modulation-doped quantum wells

A. Tomita; J. Shah; J. E. Cunningham; S. M. Goodnick; P. Lugli; S. L. Chuang

doi:10.1088/0268-1242/9/5S/012

Femtosecond dynamics of non-thermal holes in n-modulation-doped quantum wells

A. Tomita, J. Shah, J. E. Cunningham, S. M. Goodnick, P. Lugli, S. L. Chuang

Research output: Contribution to journal › Article › peer-review

Abstract

Nearly all femtosecond carrier relaxation studies are dominated by electron dynamics. We have investigated femtosecond hole dynamics by a judicious choice of experimental parameters: n-modulation-doped GaAs/AlGaAs quantum wells at low temperatures excited with small excess energy and low photoexcitation density. We show that holes are non-thermal for approximately the first 800 fs and determine the hole-electron energy loss rates by comparing experimental results with Monte Carlo simulations. These results represent the first definitive study of hole relaxation dynamics in a semiconductor.

Original language	English (US)
Article number	012
Pages (from-to)	449-452
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	9
Issue number	5 S
DOIs	https://doi.org/10.1088/0268-1242/9/5S/012
State	Published - Dec 1 1994
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/9/5S/012

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abstract = "Nearly all femtosecond carrier relaxation studies are dominated by electron dynamics. We have investigated femtosecond hole dynamics by a judicious choice of experimental parameters: n-modulation-doped GaAs/AlGaAs quantum wells at low temperatures excited with small excess energy and low photoexcitation density. We show that holes are non-thermal for approximately the first 800 fs and determine the hole-electron energy loss rates by comparing experimental results with Monte Carlo simulations. These results represent the first definitive study of hole relaxation dynamics in a semiconductor.",

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AU - Tomita, A.

AU - Shah, J.

AU - Cunningham, J. E.

AU - Goodnick, S. M.

AU - Lugli, P.

AU - Chuang, S. L.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - Nearly all femtosecond carrier relaxation studies are dominated by electron dynamics. We have investigated femtosecond hole dynamics by a judicious choice of experimental parameters: n-modulation-doped GaAs/AlGaAs quantum wells at low temperatures excited with small excess energy and low photoexcitation density. We show that holes are non-thermal for approximately the first 800 fs and determine the hole-electron energy loss rates by comparing experimental results with Monte Carlo simulations. These results represent the first definitive study of hole relaxation dynamics in a semiconductor.

AB - Nearly all femtosecond carrier relaxation studies are dominated by electron dynamics. We have investigated femtosecond hole dynamics by a judicious choice of experimental parameters: n-modulation-doped GaAs/AlGaAs quantum wells at low temperatures excited with small excess energy and low photoexcitation density. We show that holes are non-thermal for approximately the first 800 fs and determine the hole-electron energy loss rates by comparing experimental results with Monte Carlo simulations. These results represent the first definitive study of hole relaxation dynamics in a semiconductor.

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JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 5 S

M1 - 012

ER -

Femtosecond dynamics of non-thermal holes in n-modulation-doped quantum wells

Abstract

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