Nearly all femtosecond carrier relaxation studies are dominated by electron dynamics. We have investigated femtosecond hole dynamics by a judicious choice of experimental parameters: n-modulation-doped GaAs/AlGaAs quantum wells at low temperatures excited with small excess energy and low photoexcitation density. We show that holes are non-thermal for approximately the first 800 fs and determine the hole-electron energy loss rates by comparing experimental results with Monte Carlo simulations. These results represent the first definitive study of hole relaxation dynamics in a semiconductor.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry