Femtosecond dynamics of non-thermal holes in n-modulation-doped quantum wells

A. Tomita, J. Shah, J. E. Cunningham, S. M. Goodnick, P. Lugli, S. L. Chuang

Research output: Contribution to journalArticle

Abstract

Nearly all femtosecond carrier relaxation studies are dominated by electron dynamics. We have investigated femtosecond hole dynamics by a judicious choice of experimental parameters: n-modulation-doped GaAs/AlGaAs quantum wells at low temperatures excited with small excess energy and low photoexcitation density. We show that holes are non-thermal for approximately the first 800 fs and determine the hole-electron energy loss rates by comparing experimental results with Monte Carlo simulations. These results represent the first definitive study of hole relaxation dynamics in a semiconductor.

Original languageEnglish (US)
Article number012
Pages (from-to)449-452
Number of pages4
JournalSemiconductor Science and Technology
Volume9
Issue number5 S
DOIs
StatePublished - Dec 1 1994

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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