Fabrication of nanopillar structure by silica nanosphere lithography and passivation with wet chemical oxidation cleaning

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work focus the fabrication and passivation of Si nanopillar structure. Si nanopillar structures are fabricated by well controlled silica nanosphere lithography with metal assisted chemical etching (MACE). For high quality passivation, nanopillar structures are cleaned using general Si cleaning process with wet oxidation. The wet oxidation process helps to reduce surface state density of nanopillar structure. Nanopillar structure is passivated using several methods as thermal, wet oxide, a-Si:H, organic and aluminum oxide (Al2O3). Al2O3 passivation shows the highest lifetime and implied open circuit voltage (Voc) as 31.9 μs and 595 mV.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2922-2924
Number of pages3
Volume2016-November
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Keywords

  • AlO passivation
  • atomic layer deposition
  • metal assisted chemical etching
  • nanopillar
  • silica nanospheres lithography

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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