Fabrication of nanopillar structure by silica nanosphere lithography and passivation with wet chemical oxidation cleaning

Sangpyeong Kim; Stuart Bowden; Christiana Honsberg

doi:10.1109/PVSC.2016.7750192

Fabrication of nanopillar structure by silica nanosphere lithography and passivation with wet chemical oxidation cleaning

Sangpyeong Kim, Stuart Bowden, Christiana Honsberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work focus the fabrication and passivation of Si nanopillar structure. Si nanopillar structures are fabricated by well controlled silica nanosphere lithography with metal assisted chemical etching (MACE). For high quality passivation, nanopillar structures are cleaned using general Si cleaning process with wet oxidation. The wet oxidation process helps to reduce surface state density of nanopillar structure. Nanopillar structure is passivated using several methods as thermal, wet oxide, a-Si:H, organic and aluminum oxide (Al₂O₃). Al₂O₃ passivation shows the highest lifetime and implied open circuit voltage (Voc) as 31.9 μs and 595 mV.

Original language	English (US)
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2922-2924
Number of pages	3
Volume	2016-November
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7750192
State	Published - Nov 18 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016

Other

Other	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	6/5/16 → 6/10/16

Keywords

AlO passivation
atomic layer deposition
metal assisted chemical etching
nanopillar
silica nanospheres lithography

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2016.7750192

Cite this

Kim, S., Bowden, S., & Honsberg, C. (2016). Fabrication of nanopillar structure by silica nanosphere lithography and passivation with wet chemical oxidation cleaning. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (Vol. 2016-November, pp. 2922-2924). Article 7750192 Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750192

Fabrication of nanopillar structure by silica nanosphere lithography and passivation with wet chemical oxidation cleaning. / Kim, Sangpyeong; Bowden, Stuart; Honsberg, Christiana.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Vol. 2016-November Institute of Electrical and Electronics Engineers Inc., 2016. p. 2922-2924 7750192.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, S, Bowden, S & Honsberg, C 2016, Fabrication of nanopillar structure by silica nanosphere lithography and passivation with wet chemical oxidation cleaning. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. vol. 2016-November, 7750192, Institute of Electrical and Electronics Engineers Inc., pp. 2922-2924, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 6/5/16. https://doi.org/10.1109/PVSC.2016.7750192

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abstract = "This work focus the fabrication and passivation of Si nanopillar structure. Si nanopillar structures are fabricated by well controlled silica nanosphere lithography with metal assisted chemical etching (MACE). For high quality passivation, nanopillar structures are cleaned using general Si cleaning process with wet oxidation. The wet oxidation process helps to reduce surface state density of nanopillar structure. Nanopillar structure is passivated using several methods as thermal, wet oxide, a-Si:H, organic and aluminum oxide (Al2O3). Al2O3 passivation shows the highest lifetime and implied open circuit voltage (Voc) as 31.9 μs and 595 mV.",

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N2 - This work focus the fabrication and passivation of Si nanopillar structure. Si nanopillar structures are fabricated by well controlled silica nanosphere lithography with metal assisted chemical etching (MACE). For high quality passivation, nanopillar structures are cleaned using general Si cleaning process with wet oxidation. The wet oxidation process helps to reduce surface state density of nanopillar structure. Nanopillar structure is passivated using several methods as thermal, wet oxide, a-Si:H, organic and aluminum oxide (Al2O3). Al2O3 passivation shows the highest lifetime and implied open circuit voltage (Voc) as 31.9 μs and 595 mV.

AB - This work focus the fabrication and passivation of Si nanopillar structure. Si nanopillar structures are fabricated by well controlled silica nanosphere lithography with metal assisted chemical etching (MACE). For high quality passivation, nanopillar structures are cleaned using general Si cleaning process with wet oxidation. The wet oxidation process helps to reduce surface state density of nanopillar structure. Nanopillar structure is passivated using several methods as thermal, wet oxide, a-Si:H, organic and aluminum oxide (Al2O3). Al2O3 passivation shows the highest lifetime and implied open circuit voltage (Voc) as 31.9 μs and 595 mV.

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Fabrication of nanopillar structure by silica nanosphere lithography and passivation with wet chemical oxidation cleaning

Abstract

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Keywords

ASJC Scopus subject areas

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