Fabrication of Cr nanostructures with the scanning tunnelling microscope

W. Xie; X. Dai; L. S. Xu; David Allee; J. Spector

doi:10.1088/0957-4484/8/2/007

Fabrication of Cr nanostructures with the scanning tunnelling microscope

W. Xie, X. Dai, L. S. Xu, David Allee, J. Spector

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

In this work, nanometer scale electrically conducting lines and quantum structures on chromium (Cr) films have been fabricated with an ambient scanning tunnelling microscope and a subsequent CR-14 chromium etch. The line width of these structures is approximately 60 nm and the height of the lines is approximately 10 nm. In addition, experiments have been performed to determine the Cr etch rate in CR-14 etchant and the thickness of the Cr layer that could be oxidized through by the STM tunnelling current.

Original language	English (US)
Pages (from-to)	88-93
Number of pages	6
Journal	Nanotechnology
Volume	8
Issue number	2
DOIs	https://doi.org/10.1088/0957-4484/8/2/007
State	Published - Jun 1997

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/8/2/007

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abstract = "In this work, nanometer scale electrically conducting lines and quantum structures on chromium (Cr) films have been fabricated with an ambient scanning tunnelling microscope and a subsequent CR-14 chromium etch. The line width of these structures is approximately 60 nm and the height of the lines is approximately 10 nm. In addition, experiments have been performed to determine the Cr etch rate in CR-14 etchant and the thickness of the Cr layer that could be oxidized through by the STM tunnelling current.",

author = "W. Xie and X. Dai and Xu, {L. S.} and David Allee and J. Spector",

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AU - Xie, W.

AU - Dai, X.

AU - Xu, L. S.

AU - Allee, David

AU - Spector, J.

PY - 1997/6

Y1 - 1997/6

N2 - In this work, nanometer scale electrically conducting lines and quantum structures on chromium (Cr) films have been fabricated with an ambient scanning tunnelling microscope and a subsequent CR-14 chromium etch. The line width of these structures is approximately 60 nm and the height of the lines is approximately 10 nm. In addition, experiments have been performed to determine the Cr etch rate in CR-14 etchant and the thickness of the Cr layer that could be oxidized through by the STM tunnelling current.

AB - In this work, nanometer scale electrically conducting lines and quantum structures on chromium (Cr) films have been fabricated with an ambient scanning tunnelling microscope and a subsequent CR-14 chromium etch. The line width of these structures is approximately 60 nm and the height of the lines is approximately 10 nm. In addition, experiments have been performed to determine the Cr etch rate in CR-14 etchant and the thickness of the Cr layer that could be oxidized through by the STM tunnelling current.

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Fabrication of Cr nanostructures with the scanning tunnelling microscope

Abstract

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