Abstract
Semiconductor nanolasers are potentially important for many applications. Their design and fabrication are still in the early stage of research and face many challenges. In this paper, we demonstrate a generally applicable membrane transfer method to release and transfer a strain-balanced InGaAs quantum-well nanomembrane of 260 nm in thickness onto various substrates with a high yield. As an initial device demonstration, nano-ring lasers of 1.5 μm in outer diameter and 500 nm in radial thickness are fabricated on MgF2 substrates. Room temperature single mode operation is achieved under optical pumping with a cavity volume of only 0.43λ03 (λ0 in vacuum). Our nano-membrane based approach represents an advantageous alternative to other design and fabrication approaches and could lead to integration of nanolasers on silicon substrates or with metallic cavity.
Original language | English (US) |
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Article number | 171105 |
Journal | Applied Physics Letters |
Volume | 110 |
Issue number | 17 |
DOIs | |
State | Published - Apr 24 2017 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)