Fabrication and room temperature operation of semiconductor nano-ring lasers using a general applicable membrane transfer method

Fan Fan, Yueyang Yu, Seyed Ebrahim Hashemi Amiri, David Quandt, Dieter Bimberg, Cun-Zheng Ning

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Semiconductor nanolasers are potentially important for many applications. Their design and fabrication are still in the early stage of research and face many challenges. In this paper, we demonstrate a generally applicable membrane transfer method to release and transfer a strain-balanced InGaAs quantum-well nanomembrane of 260 nm in thickness onto various substrates with a high yield. As an initial device demonstration, nano-ring lasers of 1.5 μm in outer diameter and 500 nm in radial thickness are fabricated on MgF2 substrates. Room temperature single mode operation is achieved under optical pumping with a cavity volume of only 0.43λ0 30 in vacuum). Our nano-membrane based approach represents an advantageous alternative to other design and fabrication approaches and could lead to integration of nanolasers on silicon substrates or with metallic cavity.

Original languageEnglish (US)
Article number171105
JournalApplied Physics Letters
Volume110
Issue number17
DOIs
StatePublished - Apr 24 2017

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ring lasers
membranes
fabrication
room temperature
cavities
optical pumping
temperature
quantum wells
vacuum
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Fabrication and room temperature operation of semiconductor nano-ring lasers using a general applicable membrane transfer method. / Fan, Fan; Yu, Yueyang; Amiri, Seyed Ebrahim Hashemi; Quandt, David; Bimberg, Dieter; Ning, Cun-Zheng.

In: Applied Physics Letters, Vol. 110, No. 17, 171105, 24.04.2017.

Research output: Contribution to journalArticle

Fan, Fan ; Yu, Yueyang ; Amiri, Seyed Ebrahim Hashemi ; Quandt, David ; Bimberg, Dieter ; Ning, Cun-Zheng. / Fabrication and room temperature operation of semiconductor nano-ring lasers using a general applicable membrane transfer method. In: Applied Physics Letters. 2017 ; Vol. 110, No. 17.
@article{0f2120ba9804471288eceaa5652960d2,
title = "Fabrication and room temperature operation of semiconductor nano-ring lasers using a general applicable membrane transfer method",
abstract = "Semiconductor nanolasers are potentially important for many applications. Their design and fabrication are still in the early stage of research and face many challenges. In this paper, we demonstrate a generally applicable membrane transfer method to release and transfer a strain-balanced InGaAs quantum-well nanomembrane of 260 nm in thickness onto various substrates with a high yield. As an initial device demonstration, nano-ring lasers of 1.5 μm in outer diameter and 500 nm in radial thickness are fabricated on MgF2 substrates. Room temperature single mode operation is achieved under optical pumping with a cavity volume of only 0.43λ0 3 (λ0 in vacuum). Our nano-membrane based approach represents an advantageous alternative to other design and fabrication approaches and could lead to integration of nanolasers on silicon substrates or with metallic cavity.",
author = "Fan Fan and Yueyang Yu and Amiri, {Seyed Ebrahim Hashemi} and David Quandt and Dieter Bimberg and Cun-Zheng Ning",
year = "2017",
month = "4",
day = "24",
doi = "10.1063/1.4982621",
language = "English (US)",
volume = "110",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

TY - JOUR

T1 - Fabrication and room temperature operation of semiconductor nano-ring lasers using a general applicable membrane transfer method

AU - Fan, Fan

AU - Yu, Yueyang

AU - Amiri, Seyed Ebrahim Hashemi

AU - Quandt, David

AU - Bimberg, Dieter

AU - Ning, Cun-Zheng

PY - 2017/4/24

Y1 - 2017/4/24

N2 - Semiconductor nanolasers are potentially important for many applications. Their design and fabrication are still in the early stage of research and face many challenges. In this paper, we demonstrate a generally applicable membrane transfer method to release and transfer a strain-balanced InGaAs quantum-well nanomembrane of 260 nm in thickness onto various substrates with a high yield. As an initial device demonstration, nano-ring lasers of 1.5 μm in outer diameter and 500 nm in radial thickness are fabricated on MgF2 substrates. Room temperature single mode operation is achieved under optical pumping with a cavity volume of only 0.43λ0 3 (λ0 in vacuum). Our nano-membrane based approach represents an advantageous alternative to other design and fabrication approaches and could lead to integration of nanolasers on silicon substrates or with metallic cavity.

AB - Semiconductor nanolasers are potentially important for many applications. Their design and fabrication are still in the early stage of research and face many challenges. In this paper, we demonstrate a generally applicable membrane transfer method to release and transfer a strain-balanced InGaAs quantum-well nanomembrane of 260 nm in thickness onto various substrates with a high yield. As an initial device demonstration, nano-ring lasers of 1.5 μm in outer diameter and 500 nm in radial thickness are fabricated on MgF2 substrates. Room temperature single mode operation is achieved under optical pumping with a cavity volume of only 0.43λ0 3 (λ0 in vacuum). Our nano-membrane based approach represents an advantageous alternative to other design and fabrication approaches and could lead to integration of nanolasers on silicon substrates or with metallic cavity.

UR - http://www.scopus.com/inward/record.url?scp=85018336238&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85018336238&partnerID=8YFLogxK

U2 - 10.1063/1.4982621

DO - 10.1063/1.4982621

M3 - Article

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 171105

ER -