Extraction efficiency improvement of GaN light-emitting diode using sub-wavelength nanoimprinted patterns on sapphire substrate

Hao Chen, Chao Wang, Stephen Y. Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The sapphire substrate with sub-wavelength pattern pitch (200 nm) was fabricated by nanoimprint and has significantly enhanced the extraction efficiency of GaN LED (λ=450 nm) -- 80% more light out than the LEDs on flat sapphire substrate that grown in the same run and better than previously-reported micro-scale patterns.

Original languageEnglish (US)
Title of host publicationOptics InfoBase Conference Papers
StatePublished - 2011
Externally publishedYes
EventCLEO: Science and Innovations, CLEO_SI 2011 - Baltimore, MD, United States
Duration: May 1 2011May 6 2011

Other

OtherCLEO: Science and Innovations, CLEO_SI 2011
CountryUnited States
CityBaltimore, MD
Period5/1/115/6/11

Fingerprint

Sapphire
Light emitting diodes
sapphire
light emitting diodes
Wavelength
Substrates
wavelengths

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Extraction efficiency improvement of GaN light-emitting diode using sub-wavelength nanoimprinted patterns on sapphire substrate. / Chen, Hao; Wang, Chao; Chou, Stephen Y.

Optics InfoBase Conference Papers. 2011.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, H, Wang, C & Chou, SY 2011, Extraction efficiency improvement of GaN light-emitting diode using sub-wavelength nanoimprinted patterns on sapphire substrate. in Optics InfoBase Conference Papers. CLEO: Science and Innovations, CLEO_SI 2011, Baltimore, MD, United States, 5/1/11.
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