External Quantum Efficiency of Monolayer MoTe2 Based Near-Infrared Light Emitting Diodes

Jiabin Feng; Yongzhuo Li; Song Fu; Jianxing Zhang; Zizhao Zhong; Hao Sun; Lin Gan; C. Z. Ning

doi:10.23919/CLEO.2019.8749975

External Quantum Efficiency of Monolayer MoTe₂ Based Near-Infrared Light Emitting Diodes

Jiabin Feng, Yongzhuo Li, Song Fu, Jianxing Zhang, Zizhao Zhong, Hao Sun, Lin Gan, C. Z. Ning

Electrical, Computer, and Energy Engineering, School of (ECEE)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrated a monolayer MoTe₂ based near-IR light emitting diode on SiO₂/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10-{-4}sim 5times 10-{-3} at 5sim 300mathrm{K}

Original language	English (US)
Title of host publication	2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781943580576
DOIs	https://doi.org/10.23919/CLEO.2019.8749975
State	Published - May 2019
Event	2019 Conference on Lasers and Electro-Optics, CLEO 2019 - San Jose, United States Duration: May 5 2019 → May 10 2019

Publication series

Name	2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

Conference

Conference	2019 Conference on Lasers and Electro-Optics, CLEO 2019
Country/Territory	United States
City	San Jose
Period	5/5/19 → 5/10/19

ASJC Scopus subject areas

Spectroscopy
Industrial and Manufacturing Engineering
Safety, Risk, Reliability and Quality
Management, Monitoring, Policy and Law
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging
Instrumentation
Atomic and Molecular Physics, and Optics

Access to Document

10.23919/CLEO.2019.8749975

Cite this

Feng, J., Li, Y., Fu, S., Zhang, J., Zhong, Z., Sun, H., Gan, L., & Ning, C. Z. (2019). External Quantum Efficiency of Monolayer MoTe₂ Based Near-Infrared Light Emitting Diodes. In 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings [8749975] (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/CLEO.2019.8749975

External Quantum Efficiency of Monolayer MoTe₂ Based Near-Infrared Light Emitting Diodes. / Feng, Jiabin; Li, Yongzhuo; Fu, Song; Zhang, Jianxing; Zhong, Zizhao; Sun, Hao; Gan, Lin; Ning, C. Z.

2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8749975 (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Feng, J, Li, Y, Fu, S, Zhang, J, Zhong, Z, Sun, H, Gan, L & Ning, CZ 2019, External Quantum Efficiency of Monolayer MoTe₂ Based Near-Infrared Light Emitting Diodes. in 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings., 8749975, 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 Conference on Lasers and Electro-Optics, CLEO 2019, San Jose, United States, 5/5/19. https://doi.org/10.23919/CLEO.2019.8749975

Feng J, Li Y, Fu S, Zhang J, Zhong Z, Sun H et al. External Quantum Efficiency of Monolayer MoTe₂ Based Near-Infrared Light Emitting Diodes. In 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8749975. (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings). https://doi.org/10.23919/CLEO.2019.8749975

Feng, Jiabin ; Li, Yongzhuo ; Fu, Song ; Zhang, Jianxing ; Zhong, Zizhao ; Sun, Hao ; Gan, Lin ; Ning, C. Z. / External Quantum Efficiency of Monolayer MoTe₂ Based Near-Infrared Light Emitting Diodes. 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings).

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title = "External Quantum Efficiency of Monolayer MoTe2 Based Near-Infrared Light Emitting Diodes",

abstract = "We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10-{-4}sim 5times 10-{-3} at 5sim 300mathrm{K}",

author = "Jiabin Feng and Yongzhuo Li and Song Fu and Jianxing Zhang and Zizhao Zhong and Hao Sun and Lin Gan and Ning, {C. Z.}",

note = "Funding Information: This research is supported by the National Science Foundation of China (Grant No. 91750206, No. 61705118, No. 11774412), the Beijing Center for Future Chips, Beijing National Research Center for Information Science and Technology, Tsinghua University Initiative Scientific Research Program (No. 20141081296). Publisher Copyright: {\textcopyright} 2019 The Author(s) 2019 OSA.; 2019 Conference on Lasers and Electro-Optics, CLEO 2019 ; Conference date: 05-05-2019 Through 10-05-2019",

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AU - Zhong, Zizhao

AU - Sun, Hao

AU - Gan, Lin

AU - Ning, C. Z.

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