TY - GEN
T1 - External Quantum Efficiency of Monolayer MoTe2 Based Near-Infrared Light Emitting Diodes
AU - Feng, Jiabin
AU - Li, Yongzhuo
AU - Fu, Song
AU - Zhang, Jianxing
AU - Zhong, Zizhao
AU - Sun, Hao
AU - Gan, Lin
AU - Ning, C. Z.
N1 - Funding Information:
This research is supported by the National Science Foundation of China (Grant No. 91750206, No. 61705118, No. 11774412), the Beijing Center for Future Chips, Beijing National Research Center for Information Science and Technology, Tsinghua University Initiative Scientific Research Program (No. 20141081296).
Publisher Copyright:
© 2019 The Author(s) 2019 OSA.
PY - 2019/5
Y1 - 2019/5
N2 - We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10-{-4}sim 5times 10-{-3} at 5sim 300mathrm{K}
AB - We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10-{-4}sim 5times 10-{-3} at 5sim 300mathrm{K}
UR - http://www.scopus.com/inward/record.url?scp=85069221789&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85069221789&partnerID=8YFLogxK
U2 - 10.23919/CLEO.2019.8749975
DO - 10.23919/CLEO.2019.8749975
M3 - Conference contribution
AN - SCOPUS:85069221789
T3 - 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings
BT - 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 Conference on Lasers and Electro-Optics, CLEO 2019
Y2 - 5 May 2019 through 10 May 2019
ER -