Abstract
We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10-{-4}sim 5times 10-{-3} at 5sim 300mathrm{K}
| Original language | English (US) |
|---|---|
| Title of host publication | 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781943580576 |
| DOIs | |
| State | Published - May 1 2019 |
| Event | 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - San Jose, United States Duration: May 5 2019 → May 10 2019 |
Publication series
| Name | 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings |
|---|
Conference
| Conference | 2019 Conference on Lasers and Electro-Optics, CLEO 2019 |
|---|---|
| Country | United States |
| City | San Jose |
| Period | 5/5/19 → 5/10/19 |
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ASJC Scopus subject areas
- Spectroscopy
- Industrial and Manufacturing Engineering
- Safety, Risk, Reliability and Quality
- Management, Monitoring, Policy and Law
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
- Instrumentation
- Atomic and Molecular Physics, and Optics
Cite this
External Quantum Efficiency of Monolayer MoTe2 Based Near-Infrared Light Emitting Diodes. / Feng, Jiabin; Li, Yongzhuo; Fu, Song; Zhang, Jianxing; Zhong, Zizhao; Sun, Hao; Gan, Lin; Ning, Cun-Zheng.
2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8749975 (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - External Quantum Efficiency of Monolayer MoTe2 Based Near-Infrared Light Emitting Diodes
AU - Feng, Jiabin
AU - Li, Yongzhuo
AU - Fu, Song
AU - Zhang, Jianxing
AU - Zhong, Zizhao
AU - Sun, Hao
AU - Gan, Lin
AU - Ning, Cun-Zheng
PY - 2019/5/1
Y1 - 2019/5/1
N2 - We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10-{-4}sim 5times 10-{-3} at 5sim 300mathrm{K}
AB - We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10-{-4}sim 5times 10-{-3} at 5sim 300mathrm{K}
UR - http://www.scopus.com/inward/record.url?scp=85069221789&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85069221789&partnerID=8YFLogxK
U2 - 10.23919/CLEO.2019.8749975
DO - 10.23919/CLEO.2019.8749975
M3 - Conference contribution
AN - SCOPUS:85069221789
T3 - 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings
BT - 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -