External Quantum Efficiency of Monolayer MoTe2 Based Near-Infrared Light Emitting Diodes

Jiabin Feng, Yongzhuo Li, Song Fu, Jianxing Zhang, Zizhao Zhong, Hao Sun, Lin Gan, Cun-Zheng Ning

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrated a monolayer MoTe2 based near-IR light emitting diode on SiO2/Si substrate and determined for the first time the external quantum efficiency of the device in the range of 10-{-4}sim 5times 10-{-3} at 5sim 300mathrm{K}

Original languageEnglish (US)
Title of host publication2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580576
DOIs
StatePublished - May 1 2019
Event2019 Conference on Lasers and Electro-Optics, CLEO 2019 - San Jose, United States
Duration: May 5 2019May 10 2019

Publication series

Name2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings

Conference

Conference2019 Conference on Lasers and Electro-Optics, CLEO 2019
CountryUnited States
CitySan Jose
Period5/5/195/10/19

    Fingerprint

ASJC Scopus subject areas

  • Spectroscopy
  • Industrial and Manufacturing Engineering
  • Safety, Risk, Reliability and Quality
  • Management, Monitoring, Policy and Law
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Feng, J., Li, Y., Fu, S., Zhang, J., Zhong, Z., Sun, H., Gan, L., & Ning, C-Z. (2019). External Quantum Efficiency of Monolayer MoTe2 Based Near-Infrared Light Emitting Diodes. In 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings [8749975] (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/CLEO.2019.8749975