Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

Jay Mathews, Radek Roucka, Junqi Xie, Shui Qing Yu, Jose Menendez, John Kouvetakis

Research output: Contribution to journalArticle

120 Citations (Scopus)

Abstract

First-generation n-i-GeSn/p-Si(100) photodiode detectors with Ge 0.98Sn0.02 active layers were fabricated under complementary metal oxide semiconductor compatible conditions. It is found that, even at this low Sn concentration, the detector quantum efficiencies are higher than those in comparable pure-Ge device designs processed at low temperature. Most significantly, the spectral range of the GeSn device responsivity is dramatically increased-to at least 1750 nm-well beyond the direct band gap of Ge (1550 nm). This allows coverage of all telecommunication bands using entirely group IV materials.

Original languageEnglish (US)
Article number133506
JournalApplied Physics Letters
Volume95
Issue number13
DOIs
StatePublished - 2009

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photometers
telecommunication
detectors
photodiodes
quantum efficiency
low concentrations
CMOS

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications. / Mathews, Jay; Roucka, Radek; Xie, Junqi; Yu, Shui Qing; Menendez, Jose; Kouvetakis, John.

In: Applied Physics Letters, Vol. 95, No. 13, 133506, 2009.

Research output: Contribution to journalArticle

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