Abstract

To understand the thermochemistry and determine the rate limiting steps of ZnGeAs 2 thin-film synthesis, experiments were performed to measure the (a) thermal decomposition rate and (b) elemental composition and deposition rate of films produced with pulsed laser deposition (PLD). The decomposition rate is kinetically limited with an activation energy of 1.08±0.05 eV and an evaporation coefficient of ∼10 -3. We show that ZnGeAs 2 thin film synthesis is a metastable process with the kinetically-limited decomposition rate playing a dominant role at the elevated temperatures needed to attain epitaxy. Our conclusions are in contrast to those of earlier reports that assumed the growth rate is limited by desorption and the resulting low reactant sticking coefficient. The thermochemical analysis presented here can be used to predict optimal conditions for ZnGeAs 2 film physical vapor deposition and thermal processing.

Original languageEnglish (US)
Pages (from-to)267-271
Number of pages5
JournalJournal of Crystal Growth
Volume338
Issue number1
DOIs
StatePublished - Jan 1 2012

Keywords

  • A1. Desorption
  • A1. Kinetics
  • A1. Thermodynamics
  • A3. Thin film
  • B2. Semiconducting ternary compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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