Abstract

To understand the thermochemistry and determine the rate limiting steps of ZnGeAs 2 thin-film synthesis, experiments were performed to measure the (a) thermal decomposition rate and (b) elemental composition and deposition rate of films produced with pulsed laser deposition (PLD). The decomposition rate is kinetically limited with an activation energy of 1.08±0.05 eV and an evaporation coefficient of ∼10 -3. We show that ZnGeAs 2 thin film synthesis is a metastable process with the kinetically-limited decomposition rate playing a dominant role at the elevated temperatures needed to attain epitaxy. Our conclusions are in contrast to those of earlier reports that assumed the growth rate is limited by desorption and the resulting low reactant sticking coefficient. The thermochemical analysis presented here can be used to predict optimal conditions for ZnGeAs 2 film physical vapor deposition and thermal processing.

Original languageEnglish (US)
Pages (from-to)267-271
Number of pages5
JournalJournal of Crystal Growth
Volume338
Issue number1
DOIs
StatePublished - Jan 1 2012

Fingerprint

Film growth
Thermochemistry
Decomposition
decomposition
Thin films
Physical vapor deposition
Pulsed laser deposition
thin films
Deposition rates
Epitaxial growth
Desorption
Evaporation
Pyrolysis
Activation energy
Chemical analysis
thermochemistry
Experiments
coefficients
synthesis
Temperature

Keywords

  • A1. Desorption
  • A1. Kinetics
  • A1. Thermodynamics
  • A3. Thin film
  • B2. Semiconducting ternary compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Experimental study of the kinetically-limited decomposition of ZnGeAs 2 and its role in determining optimal conditions for thin film growth. / Vahidi, M.; Tang, Z. Z.; Tucker, J.; Peshek, T. J.; Zhang, L.; Kopas, C.; Singh, Rakesh; Van Schilfgaarde, M.; Newman, Nathan.

In: Journal of Crystal Growth, Vol. 338, No. 1, 01.01.2012, p. 267-271.

Research output: Contribution to journalArticle

Vahidi, M. ; Tang, Z. Z. ; Tucker, J. ; Peshek, T. J. ; Zhang, L. ; Kopas, C. ; Singh, Rakesh ; Van Schilfgaarde, M. ; Newman, Nathan. / Experimental study of the kinetically-limited decomposition of ZnGeAs 2 and its role in determining optimal conditions for thin film growth. In: Journal of Crystal Growth. 2012 ; Vol. 338, No. 1. pp. 267-271.
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AU - Zhang, L.

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