Experimental study of the kinetically-limited decomposition of ZnGeAs 2 and its role in determining optimal conditions for thin film growth

M. Vahidi; Z. Z. Tang; J. Tucker; T. J. Peshek; L. Zhang; C. Kopas; Rakesh Singh; M. Van Schilfgaarde; Nathan Newman

doi:10.1016/j.jcrysgro.2011.11.004

Experimental study of the kinetically-limited decomposition of ZnGeAs ₂ and its role in determining optimal conditions for thin film growth

M. Vahidi, Z. Z. Tang, J. Tucker, T. J. Peshek, L. Zhang, C. Kopas, Rakesh Singh, M. Van Schilfgaarde, Nathan Newman

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

To understand the thermochemistry and determine the rate limiting steps of ZnGeAs ₂ thin-film synthesis, experiments were performed to measure the (a) thermal decomposition rate and (b) elemental composition and deposition rate of films produced with pulsed laser deposition (PLD). The decomposition rate is kinetically limited with an activation energy of 1.08±0.05 eV and an evaporation coefficient of ∼10 ^-3. We show that ZnGeAs ₂ thin film synthesis is a metastable process with the kinetically-limited decomposition rate playing a dominant role at the elevated temperatures needed to attain epitaxy. Our conclusions are in contrast to those of earlier reports that assumed the growth rate is limited by desorption and the resulting low reactant sticking coefficient. The thermochemical analysis presented here can be used to predict optimal conditions for ZnGeAs ₂ film physical vapor deposition and thermal processing.

Original language	English (US)
Pages (from-to)	267-271
Number of pages	5
Journal	Journal of Crystal Growth
Volume	338
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.11.004
State	Published - Jan 1 2012

Keywords

A1. Desorption
A1. Kinetics
A1. Thermodynamics
A3. Thin film
B2. Semiconducting ternary compounds

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2011.11.004

Cite this

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title = "Experimental study of the kinetically-limited decomposition of ZnGeAs 2 and its role in determining optimal conditions for thin film growth",

abstract = "To understand the thermochemistry and determine the rate limiting steps of ZnGeAs 2 thin-film synthesis, experiments were performed to measure the (a) thermal decomposition rate and (b) elemental composition and deposition rate of films produced with pulsed laser deposition (PLD). The decomposition rate is kinetically limited with an activation energy of 1.08±0.05 eV and an evaporation coefficient of ∼10 -3. We show that ZnGeAs 2 thin film synthesis is a metastable process with the kinetically-limited decomposition rate playing a dominant role at the elevated temperatures needed to attain epitaxy. Our conclusions are in contrast to those of earlier reports that assumed the growth rate is limited by desorption and the resulting low reactant sticking coefficient. The thermochemical analysis presented here can be used to predict optimal conditions for ZnGeAs 2 film physical vapor deposition and thermal processing.",

keywords = "A1. Desorption, A1. Kinetics, A1. Thermodynamics, A3. Thin film, B2. Semiconducting ternary compounds",

author = "M. Vahidi and Tang, {Z. Z.} and J. Tucker and Peshek, {T. J.} and L. Zhang and C. Kopas and Rakesh Singh and {Van Schilfgaarde}, M. and Nathan Newman",

note = "Funding Information: This project was supported by DOE-EERE grant DE-FG36-08GO18002 . The use of facilities in the LeRoy Eyring Center for Solid State Science at Arizona State University is acknowledged.",

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doi = "10.1016/j.jcrysgro.2011.11.004",

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T1 - Experimental study of the kinetically-limited decomposition of ZnGeAs 2 and its role in determining optimal conditions for thin film growth

AU - Vahidi, M.

AU - Tang, Z. Z.

AU - Tucker, J.

AU - Peshek, T. J.

AU - Zhang, L.

AU - Kopas, C.

AU - Singh, Rakesh

AU - Van Schilfgaarde, M.

AU - Newman, Nathan

N1 - Funding Information: This project was supported by DOE-EERE grant DE-FG36-08GO18002 . The use of facilities in the LeRoy Eyring Center for Solid State Science at Arizona State University is acknowledged.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - To understand the thermochemistry and determine the rate limiting steps of ZnGeAs 2 thin-film synthesis, experiments were performed to measure the (a) thermal decomposition rate and (b) elemental composition and deposition rate of films produced with pulsed laser deposition (PLD). The decomposition rate is kinetically limited with an activation energy of 1.08±0.05 eV and an evaporation coefficient of ∼10 -3. We show that ZnGeAs 2 thin film synthesis is a metastable process with the kinetically-limited decomposition rate playing a dominant role at the elevated temperatures needed to attain epitaxy. Our conclusions are in contrast to those of earlier reports that assumed the growth rate is limited by desorption and the resulting low reactant sticking coefficient. The thermochemical analysis presented here can be used to predict optimal conditions for ZnGeAs 2 film physical vapor deposition and thermal processing.

AB - To understand the thermochemistry and determine the rate limiting steps of ZnGeAs 2 thin-film synthesis, experiments were performed to measure the (a) thermal decomposition rate and (b) elemental composition and deposition rate of films produced with pulsed laser deposition (PLD). The decomposition rate is kinetically limited with an activation energy of 1.08±0.05 eV and an evaporation coefficient of ∼10 -3. We show that ZnGeAs 2 thin film synthesis is a metastable process with the kinetically-limited decomposition rate playing a dominant role at the elevated temperatures needed to attain epitaxy. Our conclusions are in contrast to those of earlier reports that assumed the growth rate is limited by desorption and the resulting low reactant sticking coefficient. The thermochemical analysis presented here can be used to predict optimal conditions for ZnGeAs 2 film physical vapor deposition and thermal processing.

KW - A1. Desorption

KW - A1. Kinetics

KW - A1. Thermodynamics

KW - A3. Thin film

KW - B2. Semiconducting ternary compounds

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