Evolution of Ge/Si(100) islands

Island size and temperature dependence

S. A. Chaparro, Y. Zhang, Jeffery Drucker, D. Chandrasekhar, David Smith

Research output: Contribution to journalArticle

149 Citations (Scopus)

Abstract

Atomic force microscope (AFM) imaging and cross-sectional analysis were used to document the shape evolution of Ge/Si(100) islands, grown by molecular beam epitaxy, as a function of growth conditions. Growth temperatures of 450, 550, 600, and 650°C with Ge coverages between 3.5 and 14.0 monolayers (ML) were investigated for a deposition rate of 1.4 ML/min. Low coverages produced small hut clusters which then evolved into dome clusters at higher coverages. These dome clusters eventually dislocated after further growth. Higher growth temperatures activated additional pathways for the Ge islands to relieve their strain such as Ge/Si intermixing and the formation of trenches around the islands. Our detailed AFM cross-sectional analysis indicated that dome clusters form several crystal facets in addition to those previously reported.

Original languageEnglish (US)
Pages (from-to)2245-2254
Number of pages10
JournalJournal of Applied Physics
Volume87
Issue number5
StatePublished - Mar 2000

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domes
temperature dependence
microscopes
flat surfaces
molecular beam epitaxy
temperature
crystals

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Evolution of Ge/Si(100) islands : Island size and temperature dependence. / Chaparro, S. A.; Zhang, Y.; Drucker, Jeffery; Chandrasekhar, D.; Smith, David.

In: Journal of Applied Physics, Vol. 87, No. 5, 03.2000, p. 2245-2254.

Research output: Contribution to journalArticle

Chaparro, SA, Zhang, Y, Drucker, J, Chandrasekhar, D & Smith, D 2000, 'Evolution of Ge/Si(100) islands: Island size and temperature dependence', Journal of Applied Physics, vol. 87, no. 5, pp. 2245-2254.
Chaparro, S. A. ; Zhang, Y. ; Drucker, Jeffery ; Chandrasekhar, D. ; Smith, David. / Evolution of Ge/Si(100) islands : Island size and temperature dependence. In: Journal of Applied Physics. 2000 ; Vol. 87, No. 5. pp. 2245-2254.
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