Abstract
Atomic force microscope (AFM) imaging and cross-sectional analysis were used to document the shape evolution of Ge/Si(100) islands, grown by molecular beam epitaxy, as a function of growth conditions. Growth temperatures of 450, 550, 600, and 650°C with Ge coverages between 3.5 and 14.0 monolayers (ML) were investigated for a deposition rate of 1.4 ML/min. Low coverages produced small hut clusters which then evolved into dome clusters at higher coverages. These dome clusters eventually dislocated after further growth. Higher growth temperatures activated additional pathways for the Ge islands to relieve their strain such as Ge/Si intermixing and the formation of trenches around the islands. Our detailed AFM cross-sectional analysis indicated that dome clusters form several crystal facets in addition to those previously reported.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2245-2254 |
| Number of pages | 10 |
| Journal | Journal of Applied Physics |
| Volume | 87 |
| Issue number | 5 |
| State | Published - Mar 2000 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
Cite this
Evolution of Ge/Si(100) islands : Island size and temperature dependence. / Chaparro, S. A.; Zhang, Y.; Drucker, Jeffery; Chandrasekhar, D.; Smith, David.
In: Journal of Applied Physics, Vol. 87, No. 5, 03.2000, p. 2245-2254.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Evolution of Ge/Si(100) islands
T2 - Island size and temperature dependence
AU - Chaparro, S. A.
AU - Zhang, Y.
AU - Drucker, Jeffery
AU - Chandrasekhar, D.
AU - Smith, David
PY - 2000/3
Y1 - 2000/3
N2 - Atomic force microscope (AFM) imaging and cross-sectional analysis were used to document the shape evolution of Ge/Si(100) islands, grown by molecular beam epitaxy, as a function of growth conditions. Growth temperatures of 450, 550, 600, and 650°C with Ge coverages between 3.5 and 14.0 monolayers (ML) were investigated for a deposition rate of 1.4 ML/min. Low coverages produced small hut clusters which then evolved into dome clusters at higher coverages. These dome clusters eventually dislocated after further growth. Higher growth temperatures activated additional pathways for the Ge islands to relieve their strain such as Ge/Si intermixing and the formation of trenches around the islands. Our detailed AFM cross-sectional analysis indicated that dome clusters form several crystal facets in addition to those previously reported.
AB - Atomic force microscope (AFM) imaging and cross-sectional analysis were used to document the shape evolution of Ge/Si(100) islands, grown by molecular beam epitaxy, as a function of growth conditions. Growth temperatures of 450, 550, 600, and 650°C with Ge coverages between 3.5 and 14.0 monolayers (ML) were investigated for a deposition rate of 1.4 ML/min. Low coverages produced small hut clusters which then evolved into dome clusters at higher coverages. These dome clusters eventually dislocated after further growth. Higher growth temperatures activated additional pathways for the Ge islands to relieve their strain such as Ge/Si intermixing and the formation of trenches around the islands. Our detailed AFM cross-sectional analysis indicated that dome clusters form several crystal facets in addition to those previously reported.
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M3 - Article
VL - 87
SP - 2245
EP - 2254
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 5
ER -