Evaluation of AlGaN/GaN high electron mobility transistors grown on ZrTi buffer layers with sapphire substrates

Engineering & Materials Science

• Buffer layers 100%
• Sapphire 93%
• High electron mobility transistors 81%
• Substrates 49%
• Transmission electron microscopy 20%
• X ray diffraction 19%
• Full width at half maximum 14%
• Drain current 12%
• Cutoff frequency 11%
• Current density 9%

Physics & Astronomy

• high electron mobility transistors 72%
• sapphire 59%
• buffers 59%
• evaluation 44%
• transmission electron microscopy 13%
• diffraction 10%
• x rays 9%
• cut-off 8%
• current density 7%
• saturation 7%
• oscillations 6%
• cross sections 5%

Chemical Compounds

• Electron Mobility 83%
• Buffer Solution 45%
• Threading Dislocation 18%
• Drain Current 15%
• Fluorescence Maxima 13%
• Transmission Electron Microscopy 13%
• X-Ray Diffraction 9%
• Hexagonal Space Group 7%
• Dimension 7%
• Current Density 7%
• Alloy 7%