Abstract
InGaN/GaN multi-quantum-well (MQW) solar cells are investigated with temperature-dependent DC and AC analysis, and the effects of differing QW number and thickness are determined. The carrier transport is shown to be dominated by thermionic emission rather than tunneling at elevated temperature but limited by recombination outside the depletion region. Temperature-dependent AC parameters of the III-N MQW devices in high-level injection are determined through a refined AC circuit model of the device. It is shown that the use of AC small-signal analysis and its ability to extract stored charge in the QWs, the comparison of built-in potential to V OC, and other solar cell critical values allows a device designer insight not possible via DC analysis alone. This critical data suggests that the number of QWs and total depletion volume needs to be matched to the operational temperature of a given high temperature solar cell.
| Original language | English (US) |
|---|---|
| Article number | 101003 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 58 |
| Issue number | 10 |
| DOIs | |
| State | Published - Jan 1 2019 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Evaluating the performance of InGaN/GaN multi-quantum-well solar cells operated at elevated temperatures via DC and small-signal AC analysis. / Vadiee, Ehsan; Fischer, Alec M.; Clinton, Evan A.; McFavilen, Heather; Patadia, Arshey; Arena, Chantal; Ponce, Fernando A.; King, Richard R.; Honsberg, Christiana B.; Doolittle, William A.
In: Japanese Journal of Applied Physics, Vol. 58, No. 10, 101003, 01.01.2019.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Evaluating the performance of InGaN/GaN multi-quantum-well solar cells operated at elevated temperatures via DC and small-signal AC analysis
AU - Vadiee, Ehsan
AU - Fischer, Alec M.
AU - Clinton, Evan A.
AU - McFavilen, Heather
AU - Patadia, Arshey
AU - Arena, Chantal
AU - Ponce, Fernando A.
AU - King, Richard R.
AU - Honsberg, Christiana B.
AU - Doolittle, William A.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - InGaN/GaN multi-quantum-well (MQW) solar cells are investigated with temperature-dependent DC and AC analysis, and the effects of differing QW number and thickness are determined. The carrier transport is shown to be dominated by thermionic emission rather than tunneling at elevated temperature but limited by recombination outside the depletion region. Temperature-dependent AC parameters of the III-N MQW devices in high-level injection are determined through a refined AC circuit model of the device. It is shown that the use of AC small-signal analysis and its ability to extract stored charge in the QWs, the comparison of built-in potential to V OC, and other solar cell critical values allows a device designer insight not possible via DC analysis alone. This critical data suggests that the number of QWs and total depletion volume needs to be matched to the operational temperature of a given high temperature solar cell.
AB - InGaN/GaN multi-quantum-well (MQW) solar cells are investigated with temperature-dependent DC and AC analysis, and the effects of differing QW number and thickness are determined. The carrier transport is shown to be dominated by thermionic emission rather than tunneling at elevated temperature but limited by recombination outside the depletion region. Temperature-dependent AC parameters of the III-N MQW devices in high-level injection are determined through a refined AC circuit model of the device. It is shown that the use of AC small-signal analysis and its ability to extract stored charge in the QWs, the comparison of built-in potential to V OC, and other solar cell critical values allows a device designer insight not possible via DC analysis alone. This critical data suggests that the number of QWs and total depletion volume needs to be matched to the operational temperature of a given high temperature solar cell.
UR - http://www.scopus.com/inward/record.url?scp=85073243277&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85073243277&partnerID=8YFLogxK
U2 - 10.7567/1347-4065/ab3b66
DO - 10.7567/1347-4065/ab3b66
M3 - Article
AN - SCOPUS:85073243277
VL - 58
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10
M1 - 101003
ER -