Evaluating the performance of InGaN/GaN multi-quantum-well solar cells operated at elevated temperatures via DC and small-signal AC analysis

Ehsan Vadiee, Alec M. Fischer, Evan A. Clinton, Heather McFavilen, Arshey Patadia, Chantal Arena, Fernando A. Ponce, Richard R. King, Christiana B. Honsberg, William A. Doolittle

Research output: Contribution to journalArticle

Abstract

InGaN/GaN multi-quantum-well (MQW) solar cells are investigated with temperature-dependent DC and AC analysis, and the effects of differing QW number and thickness are determined. The carrier transport is shown to be dominated by thermionic emission rather than tunneling at elevated temperature but limited by recombination outside the depletion region. Temperature-dependent AC parameters of the III-N MQW devices in high-level injection are determined through a refined AC circuit model of the device. It is shown that the use of AC small-signal analysis and its ability to extract stored charge in the QWs, the comparison of built-in potential to V OC, and other solar cell critical values allows a device designer insight not possible via DC analysis alone. This critical data suggests that the number of QWs and total depletion volume needs to be matched to the operational temperature of a given high temperature solar cell.

Original languageEnglish (US)
Article number101003
JournalJapanese Journal of Applied Physics
Volume58
Issue number10
DOIs
StatePublished - Jan 1 2019

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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