Erratum: Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory (Applied Physics Letters (2014) 104 (183507))

Runchen Fang, Yago Gonzalez Velo, Wenhao Chen, Keith Holbert, Michael Kozicki, Hugh Barnaby, Shimeng Yu

Research output: Contribution to journal › Comment/debate › peer-review

1 Scopus citations

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