Erratum: Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory (Applied Physics Letters (2014) 104 (183507))

Runchen Fang; Yago Gonzalez Velo; Wenhao Chen; Keith Holbert; Michael Kozicki; Hugh Barnaby; Shimeng Yu

doi:10.1063/1.4879844

Erratum: Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory (Applied Physics Letters (2014) 104 (183507))

Runchen Fang, Yago Gonzalez Velo, Wenhao Chen, Keith Holbert, Michael Kozicki, Hugh Barnaby, Shimeng Yu

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English (US)
Article number	219902
Journal	Applied Physics Letters
Volume	104
Issue number	21
DOIs	https://doi.org/10.1063/1.4879844
State	Published - May 26 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Fang, R., Gonzalez Velo, Y., Chen, W., Holbert, K., Kozicki, M., Barnaby, H., & Yu, S. (2014). Erratum: Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory (Applied Physics Letters (2014) 104 (183507)). Applied Physics Letters, 104(21), Article 219902. https://doi.org/10.1063/1.4879844

Erratum: Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory (Applied Physics Letters (2014) 104 (183507)). / Fang, Runchen; Gonzalez Velo, Yago; Chen, Wenhao et al.
In: Applied Physics Letters, Vol. 104, No. 21, 219902, 26.05.2014.

Research output: Contribution to journal › Comment/debate › peer-review

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Erratum: Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory (Applied Physics Letters (2014) 104 (183507))

ASJC Scopus subject areas

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