Original languageEnglish (US)
Article number219902
JournalApplied Physics Letters
Volume104
Issue number21
DOIs
StatePublished - May 26 2014

Fingerprint

random access memory
filaments
gamma rays
dosage
physics
radiation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

@article{58b40ca027264d6ab24b36bdbeef6ba3,
title = "Erratum: Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory (Applied Physics Letters (2014) 104 (183507))",
author = "Runchen Fang and {Gonzalez Velo}, Yago and Wenhao Chen and Keith Holbert and Michael Kozicki and Hugh Barnaby and Shimeng Yu",
year = "2014",
month = "5",
day = "26",
doi = "10.1063/1.4879844",
language = "English (US)",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "21",

}

TY - JOUR

T1 - Erratum

T2 - Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory (Applied Physics Letters (2014) 104 (183507))

AU - Fang, Runchen

AU - Gonzalez Velo, Yago

AU - Chen, Wenhao

AU - Holbert, Keith

AU - Kozicki, Michael

AU - Barnaby, Hugh

AU - Yu, Shimeng

PY - 2014/5/26

Y1 - 2014/5/26

UR - http://www.scopus.com/inward/record.url?scp=84901780985&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84901780985&partnerID=8YFLogxK

U2 - 10.1063/1.4879844

DO - 10.1063/1.4879844

M3 - Article

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

M1 - 219902

ER -