BaTiO3 thin films on MgO encapsulated GaAs(100) were prepared epitaxially, in condition ranging from 600 °C to 800 °C and from 2×10-4 Torr O2 to 1×10-2 Torr O2, by pulsed laser deposition. The epitaxial relationship between all materials was cube-on-cube. BaTiO3 thin films obtained were c axis oriented tetragonal phase and showed ferroelectric properties. Epitaxial BaTiO3 had quite smooth surface of less than 100 angstroms in roughness. BaTiO3 grown on 40-angstroms-thick epitaxial MgO was also epitaxial although defect density in BaTiO3 looked higher than that in BaTiO3 grown on 400-angstroms-thick MgO. The interfaces of BaTiO3/40-angstroms-thick MgO/GaAs structure were abrupt and free of secondary phases in spite of the quite thin MgO layer.
|Original language||English (US)|
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||9 B|
|Publication status||Published - Sep 1993|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)