Epitaxial Batio3/Mgo structure grown on gaas(100) by pulsed laser deposition

Keiichi Nashimoto, David K. Fork, Fernando A. Ponce, Joseph C. Tramontana

Research output: Contribution to journalArticle

60 Scopus citations

Abstract

BaTiO3 thin films on MgO encapsulated GaAs(100) were prepared epitaxially, in condition ranging from 600A°C to 800A°C and from 2 x 10-4 Torr O2 to 1 x 10~2 Torr O2, by pulsed laser deposition. The epitaxial relationship between all materials was cube-on-cube. BaTiO3 thin films obtained were c axis oriented tetragonal phase and showed ferroelectric properties. Epitaxial BaTiI 3 had quite smooth surface of less than 100 A in roughness. BaTiO3 grown on 40-A-thick epitaxial MgO was also epitaxial although defect density in BaTiO3 looked higher than that in BaTi03 grown on 400-A-thick MgO. The interfaces of BaTi03/40-A-thick MgO/GaAs structure were abrupt and free of secondary phases in spite of the quite thin MgO layer.

Original languageEnglish (US)
Pages (from-to)4099-4102
Number of pages4
JournalJapanese Journal of Applied Physics
Volume32
Issue number9
DOIs
StatePublished - Sep 1993
Externally publishedYes

Keywords

  • Buffer MgO
  • Epitaxial BaTiO
  • GaAs substrate
  • Hysteresis
  • Microstructure
  • Pulsed laser deposition
  • Thin film

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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