Epitaxial Batio3/Mgo structure grown on gaas(100) by pulsed laser deposition

Keiichi Nashimoto; David K. Fork; Fernando A. Ponce; Joseph C. Tramontana

doi:10.1143/JJAP.32.4099

Epitaxial Batio₃/Mgo structure grown on gaas(100) by pulsed laser deposition

Keiichi Nashimoto, David K. Fork, Fernando A. Ponce, Joseph C. Tramontana

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

BaTiO₃ thin films on MgO encapsulated GaAs(100) were prepared epitaxially, in condition ranging from 600A°C to 800A°C and from 2 x 10^-4 Torr O₂ to 1 x 10~2 Torr O2, by pulsed laser deposition. The epitaxial relationship between all materials was cube-on-cube. BaTiO₃ thin films obtained were c axis oriented tetragonal phase and showed ferroelectric properties. Epitaxial BaTiI 3 had quite smooth surface of less than 100 A in roughness. BaTiO₃ grown on 40-A-thick epitaxial MgO was also epitaxial although defect density in BaTiO₃ looked higher than that in BaTi03 grown on 400-A-thick MgO. The interfaces of BaTi03/40-A-thick MgO/GaAs structure were abrupt and free of secondary phases in spite of the quite thin MgO layer.

Original language	English (US)
Pages (from-to)	4099-4102
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	32
Issue number	9
DOIs	https://doi.org/10.1143/JJAP.32.4099
State	Published - Sep 1993
Externally published	Yes

Keywords

Buffer MgO
Epitaxial BaTiO
GaAs substrate
Hysteresis
Microstructure
Pulsed laser deposition
Thin film

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.32.4099

Cite this

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title = "Epitaxial Batio3/Mgo structure grown on gaas(100) by pulsed laser deposition",

abstract = "BaTiO3 thin films on MgO encapsulated GaAs(100) were prepared epitaxially, in condition ranging from 600A°C to 800A°C and from 2 x 10-4 Torr O2 to 1 x 10~2 Torr O2, by pulsed laser deposition. The epitaxial relationship between all materials was cube-on-cube. BaTiO3 thin films obtained were c axis oriented tetragonal phase and showed ferroelectric properties. Epitaxial BaTiI 3 had quite smooth surface of less than 100 A in roughness. BaTiO3 grown on 40-A-thick epitaxial MgO was also epitaxial although defect density in BaTiO3 looked higher than that in BaTi03 grown on 400-A-thick MgO. The interfaces of BaTi03/40-A-thick MgO/GaAs structure were abrupt and free of secondary phases in spite of the quite thin MgO layer.",

keywords = "Buffer MgO, Epitaxial BaTiO, GaAs substrate, Hysteresis, Microstructure, Pulsed laser deposition, Thin film",

author = "Keiichi Nashimoto and Fork, {David K.} and Ponce, {Fernando A.} and Tramontana, {Joseph C.}",

year = "1993",

month = sep,

doi = "10.1143/JJAP.32.4099",

language = "English (US)",

volume = "32",

pages = "4099--4102",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Epitaxial Batio3/Mgo structure grown on gaas(100) by pulsed laser deposition

AU - Nashimoto, Keiichi

AU - Fork, David K.

AU - Ponce, Fernando A.

AU - Tramontana, Joseph C.

PY - 1993/9

Y1 - 1993/9

N2 - BaTiO3 thin films on MgO encapsulated GaAs(100) were prepared epitaxially, in condition ranging from 600A°C to 800A°C and from 2 x 10-4 Torr O2 to 1 x 10~2 Torr O2, by pulsed laser deposition. The epitaxial relationship between all materials was cube-on-cube. BaTiO3 thin films obtained were c axis oriented tetragonal phase and showed ferroelectric properties. Epitaxial BaTiI 3 had quite smooth surface of less than 100 A in roughness. BaTiO3 grown on 40-A-thick epitaxial MgO was also epitaxial although defect density in BaTiO3 looked higher than that in BaTi03 grown on 400-A-thick MgO. The interfaces of BaTi03/40-A-thick MgO/GaAs structure were abrupt and free of secondary phases in spite of the quite thin MgO layer.

AB - BaTiO3 thin films on MgO encapsulated GaAs(100) were prepared epitaxially, in condition ranging from 600A°C to 800A°C and from 2 x 10-4 Torr O2 to 1 x 10~2 Torr O2, by pulsed laser deposition. The epitaxial relationship between all materials was cube-on-cube. BaTiO3 thin films obtained were c axis oriented tetragonal phase and showed ferroelectric properties. Epitaxial BaTiI 3 had quite smooth surface of less than 100 A in roughness. BaTiO3 grown on 40-A-thick epitaxial MgO was also epitaxial although defect density in BaTiO3 looked higher than that in BaTi03 grown on 400-A-thick MgO. The interfaces of BaTi03/40-A-thick MgO/GaAs structure were abrupt and free of secondary phases in spite of the quite thin MgO layer.

KW - Buffer MgO

KW - Epitaxial BaTiO

KW - GaAs substrate

KW - Hysteresis

KW - Microstructure

KW - Pulsed laser deposition

KW - Thin film

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