Epitaxial BaTiO3/MgO structure grown on GaAs(100) by pulsed laser deposition

Keiichi Nashimoto, David K. Fork, Fernando Ponce, Joseph C. Tramontana

Research output: Contribution to journalArticle

60 Scopus citations

Abstract

BaTiO3 thin films on MgO encapsulated GaAs(100) were prepared epitaxially, in condition ranging from 600 °C to 800 °C and from 2×10-4 Torr O2 to 1×10-2 Torr O2, by pulsed laser deposition. The epitaxial relationship between all materials was cube-on-cube. BaTiO3 thin films obtained were c axis oriented tetragonal phase and showed ferroelectric properties. Epitaxial BaTiO3 had quite smooth surface of less than 100 angstroms in roughness. BaTiO3 grown on 40-angstroms-thick epitaxial MgO was also epitaxial although defect density in BaTiO3 looked higher than that in BaTiO3 grown on 400-angstroms-thick MgO. The interfaces of BaTiO3/40-angstroms-thick MgO/GaAs structure were abrupt and free of secondary phases in spite of the quite thin MgO layer.

Original languageEnglish (US)
Pages (from-to)4099-4102
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume32
Issue number9 B
Publication statusPublished - Sep 1993
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this