Epitaxial BaTiO3/MgO structure grown on GaAs(100) by pulsed laser deposition

Keiichi Nashimoto, David K. Fork, Fernando Ponce, Joseph C. Tramontana

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

BaTiO3 thin films on MgO encapsulated GaAs(100) were prepared epitaxially, in condition ranging from 600 °C to 800 °C and from 2×10-4 Torr O2 to 1×10-2 Torr O2, by pulsed laser deposition. The epitaxial relationship between all materials was cube-on-cube. BaTiO3 thin films obtained were c axis oriented tetragonal phase and showed ferroelectric properties. Epitaxial BaTiO3 had quite smooth surface of less than 100 angstroms in roughness. BaTiO3 grown on 40-angstroms-thick epitaxial MgO was also epitaxial although defect density in BaTiO3 looked higher than that in BaTiO3 grown on 400-angstroms-thick MgO. The interfaces of BaTiO3/40-angstroms-thick MgO/GaAs structure were abrupt and free of secondary phases in spite of the quite thin MgO layer.

Original languageEnglish (US)
Pages (from-to)4099-4102
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume32
Issue number9 B
StatePublished - Sep 1993
Externally publishedYes

Fingerprint

Pulsed laser deposition
pulsed laser deposition
Thin films
Defect density
thin films
Ferroelectric materials
roughness
Surface roughness
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Epitaxial BaTiO3/MgO structure grown on GaAs(100) by pulsed laser deposition. / Nashimoto, Keiichi; Fork, David K.; Ponce, Fernando; Tramontana, Joseph C.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 32, No. 9 B, 09.1993, p. 4099-4102.

Research output: Contribution to journalArticle

@article{199300c280fe4187ab6dd0a33131335e,
title = "Epitaxial BaTiO3/MgO structure grown on GaAs(100) by pulsed laser deposition",
abstract = "BaTiO3 thin films on MgO encapsulated GaAs(100) were prepared epitaxially, in condition ranging from 600 °C to 800 °C and from 2×10-4 Torr O2 to 1×10-2 Torr O2, by pulsed laser deposition. The epitaxial relationship between all materials was cube-on-cube. BaTiO3 thin films obtained were c axis oriented tetragonal phase and showed ferroelectric properties. Epitaxial BaTiO3 had quite smooth surface of less than 100 angstroms in roughness. BaTiO3 grown on 40-angstroms-thick epitaxial MgO was also epitaxial although defect density in BaTiO3 looked higher than that in BaTiO3 grown on 400-angstroms-thick MgO. The interfaces of BaTiO3/40-angstroms-thick MgO/GaAs structure were abrupt and free of secondary phases in spite of the quite thin MgO layer.",
author = "Keiichi Nashimoto and Fork, {David K.} and Fernando Ponce and Tramontana, {Joseph C.}",
year = "1993",
month = "9",
language = "English (US)",
volume = "32",
pages = "4099--4102",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "9 B",

}

TY - JOUR

T1 - Epitaxial BaTiO3/MgO structure grown on GaAs(100) by pulsed laser deposition

AU - Nashimoto, Keiichi

AU - Fork, David K.

AU - Ponce, Fernando

AU - Tramontana, Joseph C.

PY - 1993/9

Y1 - 1993/9

N2 - BaTiO3 thin films on MgO encapsulated GaAs(100) were prepared epitaxially, in condition ranging from 600 °C to 800 °C and from 2×10-4 Torr O2 to 1×10-2 Torr O2, by pulsed laser deposition. The epitaxial relationship between all materials was cube-on-cube. BaTiO3 thin films obtained were c axis oriented tetragonal phase and showed ferroelectric properties. Epitaxial BaTiO3 had quite smooth surface of less than 100 angstroms in roughness. BaTiO3 grown on 40-angstroms-thick epitaxial MgO was also epitaxial although defect density in BaTiO3 looked higher than that in BaTiO3 grown on 400-angstroms-thick MgO. The interfaces of BaTiO3/40-angstroms-thick MgO/GaAs structure were abrupt and free of secondary phases in spite of the quite thin MgO layer.

AB - BaTiO3 thin films on MgO encapsulated GaAs(100) were prepared epitaxially, in condition ranging from 600 °C to 800 °C and from 2×10-4 Torr O2 to 1×10-2 Torr O2, by pulsed laser deposition. The epitaxial relationship between all materials was cube-on-cube. BaTiO3 thin films obtained were c axis oriented tetragonal phase and showed ferroelectric properties. Epitaxial BaTiO3 had quite smooth surface of less than 100 angstroms in roughness. BaTiO3 grown on 40-angstroms-thick epitaxial MgO was also epitaxial although defect density in BaTiO3 looked higher than that in BaTiO3 grown on 400-angstroms-thick MgO. The interfaces of BaTiO3/40-angstroms-thick MgO/GaAs structure were abrupt and free of secondary phases in spite of the quite thin MgO layer.

UR - http://www.scopus.com/inward/record.url?scp=0027660254&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027660254&partnerID=8YFLogxK

M3 - Article

VL - 32

SP - 4099

EP - 4102

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 B

ER -