Enhancing the surface passivation of TiO2 coated silicon wafers

B. S. Richards, J. E. Cotter, Christiana Honsberg

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

In this letter, we demonstrate good surface passivation of lightly diffused n-type solar cell emitters using titanium dioxide (TiO2) thin films treated with a furnace oxidation process. Transient-photoconductance decay, x-ray photoelectron spectroscopy, and scanning electron microscopy measurements indicate that the silicon dioxide layer formed at the TiO2:Si interface provides excellent surface passivation. Emitter dark saturation current densities of 4.7×10-14A/cm2 are achieved by this method, demonstrating that TiO2 films are compatible with high-efficiency solar cell structures.

Original languageEnglish (US)
Pages (from-to)1123-1125
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number7
DOIs
StatePublished - Feb 18 2002
Externally publishedYes

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passivity
emitters
solar cells
wafers
silicon
titanium oxides
x ray spectroscopy
furnaces
photoelectron spectroscopy
current density
silicon dioxide
saturation
oxidation
scanning electron microscopy
decay
thin films

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Enhancing the surface passivation of TiO2 coated silicon wafers. / Richards, B. S.; Cotter, J. E.; Honsberg, Christiana.

In: Applied Physics Letters, Vol. 80, No. 7, 18.02.2002, p. 1123-1125.

Research output: Contribution to journalArticle

Richards, B. S. ; Cotter, J. E. ; Honsberg, Christiana. / Enhancing the surface passivation of TiO2 coated silicon wafers. In: Applied Physics Letters. 2002 ; Vol. 80, No. 7. pp. 1123-1125.
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