Enhancing the surface passivation of TiO2 coated silicon wafers

B. S. Richards, J. E. Cotter, C. B. Honsberg

Research output: Contribution to journalArticle

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Abstract

In this letter, we demonstrate good surface passivation of lightly diffused n-type solar cell emitters using titanium dioxide (TiO2) thin films treated with a furnace oxidation process. Transient-photoconductance decay, x-ray photoelectron spectroscopy, and scanning electron microscopy measurements indicate that the silicon dioxide layer formed at the TiO2:Si interface provides excellent surface passivation. Emitter dark saturation current densities of 4.7×10-14A/cm2 are achieved by this method, demonstrating that TiO2 films are compatible with high-efficiency solar cell structures.

Original languageEnglish (US)
Pages (from-to)1123-1125
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number7
DOIs
StatePublished - Feb 18 2002
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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