Enhancement of AlGaN/GaN high electron mobility transistors off-state drain breakdown voltage via backside proton irradiation

Engineering & Materials Science

• Proton irradiation 100%
• High electron mobility transistors 66%
• Electric breakdown 64%
• Two dimensional electron gas 60%
• Protons 41%
• Drain current 29%
• Defects 23%
• Substrates 16%
• Degradation 16%
• Transconductance 13%
• Etching 12%
• Electric fields 10%
• Energy dissipation 9%
• Computer aided design 9%
• Simulators 8%
• Electric potential 5%

Physics & Astronomy

• proton irradiation 70%
• high electron mobility transistors 59%
• electrical faults 56%
• augmentation 34%
• proton energy 24%
• defects 19%
• computer aided design 13%
• transconductance 12%
• simulators 11%
• electron gas 10%
• buffers 9%
• energy dissipation 9%
• etching 8%
• protons 7%
• electric fields 6%
• profiles 6%
• electric potential 6%
• simulation 4%

Chemical Compounds

• Breakdown Voltage 85%
• Electron Mobility 68%
• Proton 37%
• Drain Current 25%
• Two-Dimensional Electron Gas 14%
• Transconductance 12%
• Energy 7%
• Etching 7%
• Electric Field 7%
• Drop 7%
• Buffer Solution 5%
• Simulation 5%