Enhanced optical and electrical performance of Ge_1-xSn _x/Ge/Si(100) (xx?=?0.062) semiconductor via inductively coupled H2plasma treatments

Engineering & Materials Science

• Semiconductor materials 100%
• Passivation 91%
• Hydrogen 89%
• Carrier concentration 80%
• Plasmas 69%
• Photoluminescence 61%
• Structural properties 40%
• Semiconductor alloys 38%
• Temperature 37%
• Epilayers 32%
• Point defects 28%
• Inductively coupled plasma 28%
• Hall effect 25%
• Atomic force microscopy 23%
• Optical properties 23%
• Electric Conductivity 21%
• Diffraction 20%
• Electric properties 20%
• Impurities 18%
• X rays 17%
• Degradation 13%
• Defects 12%

Physics & Astronomy

• passivity 83%
• hydrogen plasma 77%
• performance 49%
• hydrogen 41%
• photoluminescence 31%
• point defects 21%
• Hall effect 20%
• temperature 20%
• x ray diffraction 19%
• analogs 18%
• atomic force microscopy 17%
• wafers 16%
• electrical properties 16%
• conduction 15%
• impurities 14%
• optical properties 14%
• electrical resistivity 14%
• high resolution 13%
• room temperature 12%
• defects 12%

Chemical Compounds

• Semiconductor 85%
• Chemical Passivation 76%
• Hydrogen 57%
• Plasma 46%
• Photoluminescence 28%
• Time 27%
• Hall Effect 27%
• Crystal Point Defect 24%
• Electrical Property 15%
• Atomic Force Microscopy 14%
• Electrical Conductivity 14%
• Optical Property 13%
• Alloy 13%
• Environment 10%
• Ambient Reaction Temperature 10%