Energy efficient in-memory computing platform based on 4-terminal spin hall effect-driven domain wall motion devices

Shaahin Angizi, Zhezhi He, Deliang Fan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

In this paper, we propose an energy efficient in-memory computing platform based on novel 4-terminal spin Hall effect-driven domain wall motion devices that could be employed as both non-volatile memory cell and in-memory logic unit. The proposed designs lead to unity of memory and logic. The device to architecture level simulation results show that, with 45% area increase, the proposed in-memory computing platform achieves the write energy ∼ 15.6 fJ/bit which is more than one order lower than that of standard 1-transistor 1-magnetic tunnel junction counterpart while keeping the identical 1ns writing speed. In addition, the proposed in-memory logic scheme improves the operating energy by 61.3% as compared with the conventional nonvolatile in-memory logic designs.

Original languageEnglish (US)
Title of host publicationGLSVLSI 2017 - Proceedings of the Great Lakes Symposium on VLSI 2017
PublisherAssociation for Computing Machinery
Pages77-82
Number of pages6
ISBN (Electronic)9781450349727
DOIs
StatePublished - May 10 2017
Externally publishedYes
Event27th Great Lakes Symposium on VLSI, GLSVLSI 2017 - Banff, Canada
Duration: May 10 2017May 12 2017

Publication series

NameProceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI
VolumePart F127756

Other

Other27th Great Lakes Symposium on VLSI, GLSVLSI 2017
Country/TerritoryCanada
CityBanff
Period5/10/175/12/17

Keywords

  • Domain wall motion device
  • In-memory computing
  • Spin Hall effect

ASJC Scopus subject areas

  • Engineering(all)

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