Encapsulation of Ag films on SiO2 by Ti reactions using Ag-Ti alloy/bilayer structures and an NH3 ambient

Terry Alford; Daniel Adams; T. Laursen; B. Manfred Ullrich

doi:10.1063/1.116564

Encapsulation of Ag films on SiO2 by Ti reactions using Ag-Ti alloy/bilayer structures and an NH3 ambient

Terry Alford, Daniel Adams, T. Laursen, B. Manfred Ullrich

Chemical Engineering

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Abstract

Thin encapsulated silver films have been prepared on oxidized silicon by nitridation of ∼200-nm-thick Ag-19 at.% Ti alloy films and Ag(120 nm)/Ti(22 nm) at 300-700°C in an ammonia ambient. The encapsulation process has been studied in detail by Rutherford backscattering, and scanning Auger and secondary-ion-mass spectrometry, which showed that Ti-nitride and Ti-oxide-silicide formation take place at the surface and the Ag-Ti/SiO2 interface, respectively. Four-point-probe analysis of the alloy films suggests that the resistivity is controlled by the residual Ti concentration. Resistivity values of ∼4 μ cm were measured in encapsulated Ag alloy films with initial low Ti concentrations. The annealed bilayer structure had minimal Ti accumulations in Ag and the resistivity values were comparable to that of the as-deposited Ag (∼3 μcm).

Original language	English (US)
Pages (from-to)	3251-3253
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	23
DOIs	https://doi.org/10.1063/1.116564
State	Published - 1996

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{985ccd10bbbd4ffd8133ad77759a1b5a,

title = "Encapsulation of Ag films on SiO2 by Ti reactions using Ag-Ti alloy/bilayer structures and an NH3 ambient",

abstract = "Thin encapsulated silver films have been prepared on oxidized silicon by nitridation of ∼200-nm-thick Ag-19 at.% Ti alloy films and Ag(120 nm)/Ti(22 nm) at 300-700°C in an ammonia ambient. The encapsulation process has been studied in detail by Rutherford backscattering, and scanning Auger and secondary-ion-mass spectrometry, which showed that Ti-nitride and Ti-oxide-silicide formation take place at the surface and the Ag-Ti/SiO2 interface, respectively. Four-point-probe analysis of the alloy films suggests that the resistivity is controlled by the residual Ti concentration. Resistivity values of ∼4 μ cm were measured in encapsulated Ag alloy films with initial low Ti concentrations. The annealed bilayer structure had minimal Ti accumulations in Ag and the resistivity values were comparable to that of the as-deposited Ag (∼3 μcm).",

author = "Terry Alford and Daniel Adams and T. Laursen and {Manfred Ullrich}, B.",

year = "1996",

doi = "10.1063/1.116564",

language = "English (US)",

volume = "68",

pages = "3251--3253",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "23",

}

TY - JOUR

T1 - Encapsulation of Ag films on SiO2 by Ti reactions using Ag-Ti alloy/bilayer structures and an NH3 ambient

AU - Alford, Terry

AU - Adams, Daniel

AU - Laursen, T.

AU - Manfred Ullrich, B.

PY - 1996

Y1 - 1996

N2 - Thin encapsulated silver films have been prepared on oxidized silicon by nitridation of ∼200-nm-thick Ag-19 at.% Ti alloy films and Ag(120 nm)/Ti(22 nm) at 300-700°C in an ammonia ambient. The encapsulation process has been studied in detail by Rutherford backscattering, and scanning Auger and secondary-ion-mass spectrometry, which showed that Ti-nitride and Ti-oxide-silicide formation take place at the surface and the Ag-Ti/SiO2 interface, respectively. Four-point-probe analysis of the alloy films suggests that the resistivity is controlled by the residual Ti concentration. Resistivity values of ∼4 μ cm were measured in encapsulated Ag alloy films with initial low Ti concentrations. The annealed bilayer structure had minimal Ti accumulations in Ag and the resistivity values were comparable to that of the as-deposited Ag (∼3 μcm).

AB - Thin encapsulated silver films have been prepared on oxidized silicon by nitridation of ∼200-nm-thick Ag-19 at.% Ti alloy films and Ag(120 nm)/Ti(22 nm) at 300-700°C in an ammonia ambient. The encapsulation process has been studied in detail by Rutherford backscattering, and scanning Auger and secondary-ion-mass spectrometry, which showed that Ti-nitride and Ti-oxide-silicide formation take place at the surface and the Ag-Ti/SiO2 interface, respectively. Four-point-probe analysis of the alloy films suggests that the resistivity is controlled by the residual Ti concentration. Resistivity values of ∼4 μ cm were measured in encapsulated Ag alloy films with initial low Ti concentrations. The annealed bilayer structure had minimal Ti accumulations in Ag and the resistivity values were comparable to that of the as-deposited Ag (∼3 μcm).

UR - http://www.scopus.com/inward/record.url?scp=0001501737&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001501737&partnerID=8YFLogxK

U2 - 10.1063/1.116564

DO - 10.1063/1.116564

M3 - Article

AN - SCOPUS:0001501737

SN - 0003-6951

VL - 68

SP - 3251

EP - 3253

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Encapsulation of Ag films on SiO2 by Ti reactions using Ag-Ti alloy/bilayer structures and an NH3 ambient

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