Elemental analysis of matrix grain boundaries in SiC whisker reinforced Si3N4 based composites

Jingyue Liu; K. Das Chowdhury; Ray Carpenter; W. Braue

Elemental analysis of matrix grain boundaries in SiC whisker reinforced Si₃N₄ based composites

Jingyue Liu, K. Das Chowdhury, Ray Carpenter, W. Braue

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The structures of SiC/Si₃N₄ interfaces and Si₃N₄ matrix grain boundaries in Ceramic Matrix Composites (CMC) were investigated by high resolution electron microscopy. The light element chemistry of the interfaces was analyzed by high spatial resolution (≈3 nm) position resolved EELS in a field emission TEM and by high spatial resolution EDS in a dedicated scanning transmission electron microscope (STEM). High-angle annular dark-field (HAADF) imaging (resolution < 1 nm) technique was used to determine the distribution of yttrium atoms at matrix grain boundaries and at SiC/Si₃N₄ interfaces. HAADF images suggest that yttrium might diffuse into Si₃N₄ crystals bounding the interfacial and grain boundary regions.

Original language	English (US)
Title of host publication	Silicon Nitride Ceramics, Scientific and Technological Advances
Publisher	Publ by Materials Research Society
Pages	329-334
Number of pages	6
ISBN (Print)	1558991824
State	Published - 1993
Event	Materials Research Society Fall Meeting - Boston, MA, USA Duration: Dec 1 1992 → Dec 3 1992

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	287
ISSN (Print)	0272-9172

Other

Other	Materials Research Society Fall Meeting
City	Boston, MA, USA
Period	12/1/92 → 12/3/92

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Elemental analysis of matrix grain boundaries in SiC whisker reinforced Si₃N₄ based composites. / Liu, Jingyue; Chowdhury, K. Das; Carpenter, Ray et al.
Silicon Nitride Ceramics, Scientific and Technological Advances. Publ by Materials Research Society, 1993. p. 329-334 (Materials Research Society Symposium Proceedings; Vol. 287).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liu, J, Chowdhury, KD, Carpenter, R & Braue, W 1993, Elemental analysis of matrix grain boundaries in SiC whisker reinforced Si₃N₄ based composites. in Silicon Nitride Ceramics, Scientific and Technological Advances. Materials Research Society Symposium Proceedings, vol. 287, Publ by Materials Research Society, pp. 329-334, Materials Research Society Fall Meeting, Boston, MA, USA, 12/1/92.

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abstract = "The structures of SiC/Si3N4 interfaces and Si3N4 matrix grain boundaries in Ceramic Matrix Composites (CMC) were investigated by high resolution electron microscopy. The light element chemistry of the interfaces was analyzed by high spatial resolution (≈3 nm) position resolved EELS in a field emission TEM and by high spatial resolution EDS in a dedicated scanning transmission electron microscope (STEM). High-angle annular dark-field (HAADF) imaging (resolution < 1 nm) technique was used to determine the distribution of yttrium atoms at matrix grain boundaries and at SiC/Si3N4 interfaces. HAADF images suggest that yttrium might diffuse into Si3N4 crystals bounding the interfacial and grain boundary regions.",

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AB - The structures of SiC/Si3N4 interfaces and Si3N4 matrix grain boundaries in Ceramic Matrix Composites (CMC) were investigated by high resolution electron microscopy. The light element chemistry of the interfaces was analyzed by high spatial resolution (≈3 nm) position resolved EELS in a field emission TEM and by high spatial resolution EDS in a dedicated scanning transmission electron microscope (STEM). High-angle annular dark-field (HAADF) imaging (resolution < 1 nm) technique was used to determine the distribution of yttrium atoms at matrix grain boundaries and at SiC/Si3N4 interfaces. HAADF images suggest that yttrium might diffuse into Si3N4 crystals bounding the interfacial and grain boundary regions.

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