Elemental analysis of matrix grain boundaries in SiC whisker reinforced Si3N4 based composites

Jingyue Liu, K. Das Chowdhury, Ray Carpenter, W. Braue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The structures of SiC/Si3N4 interfaces and Si3N4 matrix grain boundaries in Ceramic Matrix Composites (CMC) were investigated by high resolution electron microscopy. The light element chemistry of the interfaces was analyzed by high spatial resolution (≈3 nm) position resolved EELS in a field emission TEM and by high spatial resolution EDS in a dedicated scanning transmission electron microscope (STEM). High-angle annular dark-field (HAADF) imaging (resolution < 1 nm) technique was used to determine the distribution of yttrium atoms at matrix grain boundaries and at SiC/Si3N4 interfaces. HAADF images suggest that yttrium might diffuse into Si3N4 crystals bounding the interfacial and grain boundary regions.

Original languageEnglish (US)
Title of host publicationSilicon Nitride Ceramics, Scientific and Technological Advances
PublisherPubl by Materials Research Society
Pages329-334
Number of pages6
ISBN (Print)1558991824
StatePublished - Jan 1 1993
EventMaterials Research Society Fall Meeting - Boston, MA, USA
Duration: Dec 1 1992Dec 3 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume287
ISSN (Print)0272-9172

Other

OtherMaterials Research Society Fall Meeting
CityBoston, MA, USA
Period12/1/9212/3/92

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Liu, J., Chowdhury, K. D., Carpenter, R., & Braue, W. (1993). Elemental analysis of matrix grain boundaries in SiC whisker reinforced Si3N4 based composites. In Silicon Nitride Ceramics, Scientific and Technological Advances (pp. 329-334). (Materials Research Society Symposium Proceedings; Vol. 287). Publ by Materials Research Society.