Elemental analysis of matrix grain boundaries in SiC whisker reinforced Si3N4 based composites

Jingyue Liu, K. Das Chowdhury, Ray Carpenter, W. Braue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The structures of SiC/Si3N4 interfaces and Si3N4 matrix grain boundaries in Ceramic Matrix Composites (CMC) were investigated by high resolution electron microscopy. The light element chemistry of the interfaces was analyzed by high spatial resolution (≈3 nm) position resolved EELS in a field emission TEM and by high spatial resolution EDS in a dedicated scanning transmission electron microscope (STEM). High-angle annular dark-field (HAADF) imaging (resolution < 1 nm) technique was used to determine the distribution of yttrium atoms at matrix grain boundaries and at SiC/Si3N4 interfaces. HAADF images suggest that yttrium might diffuse into Si3N4 crystals bounding the interfacial and grain boundary regions.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Place of PublicationPittsburgh, PA, United States
PublisherPubl by Materials Research Society
Pages329-334
Number of pages6
Volume287
ISBN (Print)1558991824
StatePublished - 1993
EventMaterials Research Society Fall Meeting - Boston, MA, USA
Duration: Dec 1 1992Dec 3 1992

Other

OtherMaterials Research Society Fall Meeting
CityBoston, MA, USA
Period12/1/9212/3/92

Fingerprint

Crystal whiskers
Grain boundaries
Yttrium
Composite materials
Chemical analysis
Ceramic matrix composites
Electron energy loss spectroscopy
High resolution electron microscopy
Field emission
Energy dispersive spectroscopy
Electron microscopes
Transmission electron microscopy
Scanning
Imaging techniques
Atoms
Crystals
silicon nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Liu, J., Chowdhury, K. D., Carpenter, R., & Braue, W. (1993). Elemental analysis of matrix grain boundaries in SiC whisker reinforced Si3N4 based composites. In Materials Research Society Symposium Proceedings (Vol. 287, pp. 329-334). Pittsburgh, PA, United States: Publ by Materials Research Society.

Elemental analysis of matrix grain boundaries in SiC whisker reinforced Si3N4 based composites. / Liu, Jingyue; Chowdhury, K. Das; Carpenter, Ray; Braue, W.

Materials Research Society Symposium Proceedings. Vol. 287 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. p. 329-334.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, J, Chowdhury, KD, Carpenter, R & Braue, W 1993, Elemental analysis of matrix grain boundaries in SiC whisker reinforced Si3N4 based composites. in Materials Research Society Symposium Proceedings. vol. 287, Publ by Materials Research Society, Pittsburgh, PA, United States, pp. 329-334, Materials Research Society Fall Meeting, Boston, MA, USA, 12/1/92.
Liu J, Chowdhury KD, Carpenter R, Braue W. Elemental analysis of matrix grain boundaries in SiC whisker reinforced Si3N4 based composites. In Materials Research Society Symposium Proceedings. Vol. 287. Pittsburgh, PA, United States: Publ by Materials Research Society. 1993. p. 329-334
Liu, Jingyue ; Chowdhury, K. Das ; Carpenter, Ray ; Braue, W. / Elemental analysis of matrix grain boundaries in SiC whisker reinforced Si3N4 based composites. Materials Research Society Symposium Proceedings. Vol. 287 Pittsburgh, PA, United States : Publ by Materials Research Society, 1993. pp. 329-334
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