Abstract

A Monte Carlo device simulator was developed to investigate the electronic transport properties in AlGaN/GaN high-electron mobility transistors (HEMTs). Electronelectron interactions were included using a particleparticleparticlemesh coupling scheme. Quantum corrections were applied to the heterointerface using the effective potential approach due to Ferry. Thermal effects were also included by coupling the particle-based device simulator self-consistently with an energy balance solver for the acoustic and optical phonons. The electrothermal device simulator was used to observe the temperature profiles across the device. Hot spots or regions of higher temperatures were found along the channel in the gatedrain spacing. Results from electrothermal simulations show self-heating degradation of performance at high sourcedrain bias. More importantly, the observed nonequilibrium phonon effects may play an important role in determining the thermal distribution in these HEMTs, resulting in reliability issues such as current collapse.

Original languageEnglish (US)
Article number5395682
Pages (from-to)562-570
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume57
Issue number3
DOIs
StatePublished - Mar 2010

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High electron mobility transistors
Simulators
Phonons
Energy balance
Thermal effects
Transport properties
Acoustics
Heating
Degradation
Temperature
Monte Carlo simulation

Keywords

  • Electromechanical coupling
  • GaN HEMTs
  • Monte Carlo particle based device simulations
  • Self-heating effects

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Electrothermal monte carlo simulation of GaN HEMTs including electronelectron interactions. / Ashok, Ashwin; Vasileska, Dragica; Hartin, Olin L.; Goodnick, Stephen.

In: IEEE Transactions on Electron Devices, Vol. 57, No. 3, 5395682, 03.2010, p. 562-570.

Research output: Contribution to journalArticle

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