Electronic structures of single-layer boron pnictides

Houlong Zhuang, Richard G. Hennig

Research output: Contribution to journalArticle

67 Citations (Scopus)

Abstract

Single-layer materials such as graphene and boron nitride promise alternative routes to electronic devices. Hybrid density functional calculations for single-layer boron pnictides boron nitride (BN), boron phosphide (BP), boron arsenide (BAs), and boron antimonide (BSb) show that these materials exhibit a direct bandgap of 6.1, 1.4, 1.2, and 0.6 eV, respectively, that originates from the energy difference of the p z orbitals of the species and is tunable by strain. The bandgap linearly decreases with strain for BN, while it increases non-linearly for BP, BAs, and BSb. The calculated natural band offsets between the various boron pnictides are all of type I.

Original languageEnglish (US)
Article number153109
JournalApplied Physics Letters
Volume101
Issue number15
DOIs
StatePublished - Oct 8 2012
Externally publishedYes

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Group 5A compounds
boron
electronic structure
boron phosphides
boron nitrides
nitrides
graphene
routes
orbitals
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electronic structures of single-layer boron pnictides. / Zhuang, Houlong; Hennig, Richard G.

In: Applied Physics Letters, Vol. 101, No. 15, 153109, 08.10.2012.

Research output: Contribution to journalArticle

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