Electronic structure, spin-orbit coupling, and interlayer interaction in bulk MoS2 and WS2

Drew W. Latzke, Wentao Zhang, Aslihan Suslu, Tay Rong Chang, Hsin Lin, Horng Tay Jeng, Sefaattin Tongay, Junqiao Wu, Arun Bansil, Alessandra Lanzara

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Abstract

We present in-depth measurements of the electronic band structure of the transition-metal dichalcogenides (TMDs) MoS2 and WS2 using angle-resolved photoemission spectroscopy, with focus on the energy splittings in their valence bands at the K point of the Brillouin zone. Experimental results are interpreted in terms of our parallel first-principles computations. We find that interlayer interaction only weakly contributes to the splitting in bulk WS2, resolving previous debates on its relative strength. We additionally find that across a range of TMDs, the band gap generally decreases with increasing magnitude of the valence-band splitting, molecular mass, or ratio of the out-of-plane to in-plane lattice constant. Our results provide an important reference for future studies of electronic properties of MoS2 and WS2 and their applications in spintronics and valleytronics devices.

Original languageEnglish (US)
Article number235202
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number23
DOIs
Publication statusPublished - Jun 11 2015

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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