Electronic structure of ideal metal/GaAs contacts

Mark Van Schilfgaarde, Nathan Newman

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

The electronic structure of seven ideal metal/GaAs interfaces is calculated self-consistently, within the local-density approximation. Calculated pinning positions ranged from 0.3 to 1 eV above the valence-band maximum. The metal d electorns are found to play a significant role in the electronic structure of the ideal interface, and in determining the Schottky-barrier height. These calculations contradict models that invoke intrinsic interface states to explain the experimentally observed Fermi-level pinning.

Original languageEnglish (US)
Pages (from-to)2728-2731
Number of pages4
JournalPhysical Review Letters
Volume65
Issue number21
DOIs
StatePublished - 1990
Externally publishedYes

Fingerprint

electronic structure
metals
valence
approximation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electronic structure of ideal metal/GaAs contacts. / Van Schilfgaarde, Mark; Newman, Nathan.

In: Physical Review Letters, Vol. 65, No. 21, 1990, p. 2728-2731.

Research output: Contribution to journalArticle

Van Schilfgaarde, Mark ; Newman, Nathan. / Electronic structure of ideal metal/GaAs contacts. In: Physical Review Letters. 1990 ; Vol. 65, No. 21. pp. 2728-2731.
@article{117b0efe9ed14311acd8cf7f5269ecf2,
title = "Electronic structure of ideal metal/GaAs contacts",
abstract = "The electronic structure of seven ideal metal/GaAs interfaces is calculated self-consistently, within the local-density approximation. Calculated pinning positions ranged from 0.3 to 1 eV above the valence-band maximum. The metal d electorns are found to play a significant role in the electronic structure of the ideal interface, and in determining the Schottky-barrier height. These calculations contradict models that invoke intrinsic interface states to explain the experimentally observed Fermi-level pinning.",
author = "{Van Schilfgaarde}, Mark and Nathan Newman",
year = "1990",
doi = "10.1103/PhysRevLett.65.2728",
language = "English (US)",
volume = "65",
pages = "2728--2731",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "21",

}

TY - JOUR

T1 - Electronic structure of ideal metal/GaAs contacts

AU - Van Schilfgaarde, Mark

AU - Newman, Nathan

PY - 1990

Y1 - 1990

N2 - The electronic structure of seven ideal metal/GaAs interfaces is calculated self-consistently, within the local-density approximation. Calculated pinning positions ranged from 0.3 to 1 eV above the valence-band maximum. The metal d electorns are found to play a significant role in the electronic structure of the ideal interface, and in determining the Schottky-barrier height. These calculations contradict models that invoke intrinsic interface states to explain the experimentally observed Fermi-level pinning.

AB - The electronic structure of seven ideal metal/GaAs interfaces is calculated self-consistently, within the local-density approximation. Calculated pinning positions ranged from 0.3 to 1 eV above the valence-band maximum. The metal d electorns are found to play a significant role in the electronic structure of the ideal interface, and in determining the Schottky-barrier height. These calculations contradict models that invoke intrinsic interface states to explain the experimentally observed Fermi-level pinning.

UR - http://www.scopus.com/inward/record.url?scp=0000770265&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000770265&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.65.2728

DO - 10.1103/PhysRevLett.65.2728

M3 - Article

AN - SCOPUS:0000770265

VL - 65

SP - 2728

EP - 2731

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 21

ER -