Electronic structure of ideal metal/GaAs contacts

Mark Van Schilfgaarde, N. Newman

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Abstract

The electronic structure of seven ideal metal/GaAs interfaces is calculated self-consistently, within the local-density approximation. Calculated pinning positions ranged from 0.3 to 1 eV above the valence-band maximum. The metal d electorns are found to play a significant role in the electronic structure of the ideal interface, and in determining the Schottky-barrier height. These calculations contradict models that invoke intrinsic interface states to explain the experimentally observed Fermi-level pinning.

Original languageEnglish (US)
Pages (from-to)2728-2731
Number of pages4
JournalPhysical Review Letters
Volume65
Issue number21
DOIs
StatePublished - Jan 1 1990

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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