Electron velocity overshoot and nonequilibrium phonons in a GaAs-based p-i-n nanostructure studied by transient subpicosecond Raman spectroscopy

E. Grann, Kong-Thon Tsen, D. Ferry

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Abstract

Transient subpicosecond Raman spectroscopy has been used to study electron velocity overshoot as well as nonequilibrium phonons in a GaAs-based p-i-n nanostructure under the application of high electric fields. Both electron distribution functions and nonequilibrium phonon populations were directly obtained in the velocity overshoot regime for a variety of electric field intensities and for different electron densities. All of our experimental results are compared with ensemble Monte Carlo calculations and good agreement is achieved.

Original languageEnglish (US)
Pages (from-to)9838-9846
Number of pages9
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume53
Issue number15
DOIs
StatePublished - Jan 1 1996

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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