Abstract

We investigate electron transport in silicon nanowires taking into account acoustic, non-polar optical phonons and surface/interface roughness scattering. We find that at very high transverse fields the reduced density of final states to which the carriers can scatter into gives rise to a reduced influence of interface-roughness scattering, which is promising result from a fabrication point of view.

Original languageEnglish (US)
Pages (from-to)126-129
Number of pages4
JournalJournal of Physics: Conference Series
Volume38
Issue number1
DOIs
StatePublished - May 10 2006

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nanowires
roughness
scattering
phonons
electrons
fabrication
acoustics
silicon

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electron transport in Si nanowires. / Ramayya, E.; Vasileska, Dragica; Goodnick, Stephen; Knezevic, I.

In: Journal of Physics: Conference Series, Vol. 38, No. 1, 10.05.2006, p. 126-129.

Research output: Contribution to journalArticle

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