Electron transport in Si nanowires

E. Ramayya; Dragica Vasileska; Stephen Goodnick; I. Knezevic

doi:10.1088/1742-6596/38/1/031

Electron transport in Si nanowires

E. Ramayya, Dragica Vasileska, Stephen Goodnick, I. Knezevic

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We investigate electron transport in silicon nanowires taking into account acoustic, non-polar optical phonons and surface/interface roughness scattering. We find that at very high transverse fields the reduced density of final states to which the carriers can scatter into gives rise to a reduced influence of interface-roughness scattering, which is promising result from a fabrication point of view.

Original language	English (US)
Pages (from-to)	126-129
Number of pages	4
Journal	Journal of Physics: Conference Series
Volume	38
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/38/1/031
State	Published - May 10 2006

ASJC Scopus subject areas

General Physics and Astronomy

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10.1088/1742-6596/38/1/031

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title = "Electron transport in Si nanowires",

abstract = "We investigate electron transport in silicon nanowires taking into account acoustic, non-polar optical phonons and surface/interface roughness scattering. We find that at very high transverse fields the reduced density of final states to which the carriers can scatter into gives rise to a reduced influence of interface-roughness scattering, which is promising result from a fabrication point of view.",

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AU - Knezevic, I.

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N2 - We investigate electron transport in silicon nanowires taking into account acoustic, non-polar optical phonons and surface/interface roughness scattering. We find that at very high transverse fields the reduced density of final states to which the carriers can scatter into gives rise to a reduced influence of interface-roughness scattering, which is promising result from a fabrication point of view.

AB - We investigate electron transport in silicon nanowires taking into account acoustic, non-polar optical phonons and surface/interface roughness scattering. We find that at very high transverse fields the reduced density of final states to which the carriers can scatter into gives rise to a reduced influence of interface-roughness scattering, which is promising result from a fabrication point of view.

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Electron transport in Si nanowires

Abstract

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