Electron Transport Across Depleted Region of A Fine-Gate Gaas: Aigaas Heteroj Unction Fet

T. J. Thornton; M. Pepper; H. Ahmed; D. Andrews; G. J. Davies

doi:10.1049/el:19860170

Electron Transport Across Depleted Region of A Fine-Gate Gaas: Aigaas Heteroj Unction Fet

T. J. Thornton, M. Pepper, H. Ahmed, D. Andrews, G. J. Davies

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The low-temperature characteristics of a depleted GaAs : AIGaAs heterojunction FET with gate length of 1000 Å and width 10 μm show that the current is initially space-charge-limited. The onset of velocity saturation is observed as the source-drain bias is increased. The structure in the differential of resistance is attributed to the emission of optic phonons by hot electrons.

Original language	English (US)
Pages (from-to)	247-249
Number of pages	3
Journal	Electronics Letters
Volume	22
Issue number	5
DOIs	https://doi.org/10.1049/el:19860170
State	Published - 1986
Externally published	Yes

Keywords

Electron transport
Semiconductor devices and materials

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19860170

Cite this

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title = "Electron Transport Across Depleted Region of A Fine-Gate Gaas: Aigaas Heteroj Unction Fet",

abstract = "The low-temperature characteristics of a depleted GaAs : AIGaAs heterojunction FET with gate length of 1000 {\AA} and width 10 μm show that the current is initially space-charge-limited. The onset of velocity saturation is observed as the source-drain bias is increased. The structure in the differential of resistance is attributed to the emission of optic phonons by hot electrons.",

keywords = "Electron transport, Semiconductor devices and materials",

author = "Thornton, {T. J.} and M. Pepper and H. Ahmed and D. Andrews and Davies, {G. J.}",

year = "1986",

doi = "10.1049/el:19860170",

language = "English (US)",

volume = "22",

pages = "247--249",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

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}

TY - JOUR

T1 - Electron Transport Across Depleted Region of A Fine-Gate Gaas

T2 - Aigaas Heteroj Unction Fet

AU - Thornton, T. J.

AU - Pepper, M.

AU - Ahmed, H.

AU - Andrews, D.

AU - Davies, G. J.

PY - 1986

Y1 - 1986

N2 - The low-temperature characteristics of a depleted GaAs : AIGaAs heterojunction FET with gate length of 1000 Å and width 10 μm show that the current is initially space-charge-limited. The onset of velocity saturation is observed as the source-drain bias is increased. The structure in the differential of resistance is attributed to the emission of optic phonons by hot electrons.

AB - The low-temperature characteristics of a depleted GaAs : AIGaAs heterojunction FET with gate length of 1000 Å and width 10 μm show that the current is initially space-charge-limited. The onset of velocity saturation is observed as the source-drain bias is increased. The structure in the differential of resistance is attributed to the emission of optic phonons by hot electrons.

KW - Electron transport

KW - Semiconductor devices and materials

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UR - http://www.scopus.com/inward/citedby.url?scp=0022660486&partnerID=8YFLogxK

U2 - 10.1049/el:19860170

DO - 10.1049/el:19860170

M3 - Article

AN - SCOPUS:0022660486

SN - 0013-5194

VL - 22

SP - 247

EP - 249

JO - Electronics Letters

JF - Electronics Letters

IS - 5

ER -

Electron Transport Across Depleted Region of A Fine-Gate Gaas: Aigaas Heteroj Unction Fet

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

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