Electron Transport Across Depleted Region of A Fine-Gate Gaas: Aigaas Heteroj Unction Fet

T. J. Thornton, M. Pepper, H. Ahmed, D. Andrews, G. J. Davies

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

The low-temperature characteristics of a depleted GaAs : AIGaAs heterojunction FET with gate length of 1000 Å and width 10 μm show that the current is initially space-charge-limited. The onset of velocity saturation is observed as the source-drain bias is increased. The structure in the differential of resistance is attributed to the emission of optic phonons by hot electrons.

Original languageEnglish (US)
Pages (from-to)247-249
Number of pages3
JournalElectronics Letters
Volume22
Issue number5
DOIs
StatePublished - Jan 1 1986
Externally publishedYes

Keywords

  • Electron transport
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Electron Transport Across Depleted Region of A Fine-Gate Gaas: Aigaas Heteroj Unction Fet'. Together they form a unique fingerprint.

  • Cite this