The low-temperature characteristics of a depleted GaAs : AIGaAs heterojunction FET with gate length of 1000 Å and width 10 μm show that the current is initially space-charge-limited. The onset of velocity saturation is observed as the source-drain bias is increased. The structure in the differential of resistance is attributed to the emission of optic phonons by hot electrons.
|Original language||English (US)|
|Number of pages||3|
|State||Published - 1986|
- Electron transport
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering