Electron energy relaxation in silicon quantum dots by acoustic and optical phonon scattering

Manfred Dür, Stephen Goodnick

Research output: Contribution to journalConference article

Abstract

In the present work, we theoretically investigate the energy relaxation of electrons due to acoustic and optical phonon scattering in quantum-dot systems embedded in a Si metal-oxide-semiconductor structure with (100) surface orientation. The confinement potential normal to the Si/SiO2 interface is modeled by an infinite triangular quantum well. For the spatial confinement in the lateral directions due to depletion gates we assume a parabolic potential. The calculated transition rates for electron scattering between discrete energy levels in the dot are included in a simple transport model using Monte Carlo techniques to simulate the relaxation of electrons from higher levels back to the ground level. We find that the electron decay shows a non-exponential behavior. The simulated relaxation time strongly depends on the confinement in the lateral directions and may vary by several orders of magnitude.

Original languageEnglish (US)
Pages (from-to)233-236
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume7
Issue number1
DOIs
StatePublished - Apr 2000
EventThe 5th International Conference on Intersubband Transitions in Quantum Wells (ITQW '99) - Bad Ischl, Austria
Duration: Sep 7 1999Sep 11 1999

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this