TY - JOUR
T1 - Electron energy relaxation in silicon quantum dots by acoustic and optical phonon scattering
AU - Dür, Manfred
AU - Goodnick, Stephen
N1 - Funding Information:
This work was supported in part by the Office of Naval Research under Contract No. N00014-98-1-0594. Additionally, M.D. would also like to acknowledge the support of the Austrian Science Foundation through the Schrödinger Fellowship J1741-PHY in this work.
PY - 2000/4
Y1 - 2000/4
N2 - In the present work, we theoretically investigate the energy relaxation of electrons due to acoustic and optical phonon scattering in quantum-dot systems embedded in a Si metal-oxide-semiconductor structure with (100) surface orientation. The confinement potential normal to the Si/SiO2 interface is modeled by an infinite triangular quantum well. For the spatial confinement in the lateral directions due to depletion gates we assume a parabolic potential. The calculated transition rates for electron scattering between discrete energy levels in the dot are included in a simple transport model using Monte Carlo techniques to simulate the relaxation of electrons from higher levels back to the ground level. We find that the electron decay shows a non-exponential behavior. The simulated relaxation time strongly depends on the confinement in the lateral directions and may vary by several orders of magnitude.
AB - In the present work, we theoretically investigate the energy relaxation of electrons due to acoustic and optical phonon scattering in quantum-dot systems embedded in a Si metal-oxide-semiconductor structure with (100) surface orientation. The confinement potential normal to the Si/SiO2 interface is modeled by an infinite triangular quantum well. For the spatial confinement in the lateral directions due to depletion gates we assume a parabolic potential. The calculated transition rates for electron scattering between discrete energy levels in the dot are included in a simple transport model using Monte Carlo techniques to simulate the relaxation of electrons from higher levels back to the ground level. We find that the electron decay shows a non-exponential behavior. The simulated relaxation time strongly depends on the confinement in the lateral directions and may vary by several orders of magnitude.
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U2 - 10.1016/S1386-9477(99)00316-1
DO - 10.1016/S1386-9477(99)00316-1
M3 - Conference article
AN - SCOPUS:0033873285
VL - 7
SP - 233
EP - 236
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1
T2 - The 5th International Conference on Intersubband Transitions in Quantum Wells (ITQW '99)
Y2 - 7 September 1999 through 11 September 1999
ER -