Abstract
In the present work, we theoretically investigate the energy relaxation of electrons due to acoustic and optical phonon scattering in quantum-dot systems embedded in a Si metal-oxide-semiconductor structure with (100) surface orientation. The confinement potential normal to the Si/SiO2 interface is modeled by an infinite triangular quantum well. For the spatial confinement in the lateral directions due to depletion gates we assume a parabolic potential. The calculated transition rates for electron scattering between discrete energy levels in the dot are included in a simple transport model using Monte Carlo techniques to simulate the relaxation of electrons from higher levels back to the ground level. We find that the electron decay shows a non-exponential behavior. The simulated relaxation time strongly depends on the confinement in the lateral directions and may vary by several orders of magnitude.
Original language | English (US) |
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Pages (from-to) | 233-236 |
Number of pages | 4 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 7 |
Issue number | 1 |
DOIs | |
State | Published - Apr 2000 |
Event | The 5th International Conference on Intersubband Transitions in Quantum Wells (ITQW '99) - Bad Ischl, Austria Duration: Sep 7 1999 → Sep 11 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics