Electron charging in epitaxial Ge quantum dots on Si(100)

Sutharsan Ketharanathan, Sourabh Sinha, John Shumway, Jeffery Drucker

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Electron confinement to heteroepitaxial Ge/Si(100) quantum dots encapsulated in a Si matrix was investigated using capacitance-voltage measurements. Optimized growth conditions produced dot ensembles comprised of either huts and pyramids or dome clusters allowing investigation of electron confinement to these distinct dot morphologies. At room temperature, 20-40 nm diameter hut and pyramid clusters confine ∼0.7 electrons, while 60-80 nm diameter dome clusters confine ∼6 electrons. The greater capacity of dome clusters may be attributed to the four distinct conduction band minima that are deeper than the single minimum found for pyramid clusters using a simple band structure model.

Original languageEnglish (US)
Article number044312
JournalJournal of Applied Physics
Volume105
Issue number4
DOIs
StatePublished - 2009

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charging
quantum dots
domes
pyramids
electrons
electrical measurement
conduction bands
capacitance
room temperature
matrices

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Electron charging in epitaxial Ge quantum dots on Si(100). / Ketharanathan, Sutharsan; Sinha, Sourabh; Shumway, John; Drucker, Jeffery.

In: Journal of Applied Physics, Vol. 105, No. 4, 044312, 2009.

Research output: Contribution to journalArticle

Ketharanathan, Sutharsan ; Sinha, Sourabh ; Shumway, John ; Drucker, Jeffery. / Electron charging in epitaxial Ge quantum dots on Si(100). In: Journal of Applied Physics. 2009 ; Vol. 105, No. 4.
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