Electron beam lithographic fabrication of ultra-submicron gate GaAs MESFETs

G. Bernstein; D. K. Ferry

doi:10.1016/0749-6036(86)90079-0

Electron beam lithographic fabrication of ultra-submicron gate GaAs MESFETs

G. Bernstein, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

A single-level-resist process was used to fabricate GaAs MESFETs with gate lengths as short as 28 nm on MBE grown epi-layers. D.C. measurements yielded transconductances up to 85 mS/mm with no dependence on gate length.

Original language	English (US)
Pages (from-to)	147-150
Number of pages	4
Journal	Superlattices and Microstructures
Volume	2
Issue number	2
DOIs	https://doi.org/10.1016/0749-6036(86)90079-0
State	Published - 1986

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/0749-6036(86)90079-0

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@article{a2d8a5e13850480e8202bbdbddc05cd0,

title = "Electron beam lithographic fabrication of ultra-submicron gate GaAs MESFETs",

abstract = "A single-level-resist process was used to fabricate GaAs MESFETs with gate lengths as short as 28 nm on MBE grown epi-layers. D.C. measurements yielded transconductances up to 85 mS/mm with no dependence on gate length.",

author = "G. Bernstein and Ferry, {D. K.}",

year = "1986",

doi = "10.1016/0749-6036(86)90079-0",

language = "English (US)",

volume = "2",

pages = "147--150",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "2",

}

TY - JOUR

T1 - Electron beam lithographic fabrication of ultra-submicron gate GaAs MESFETs

AU - Bernstein, G.

AU - Ferry, D. K.

PY - 1986

Y1 - 1986

N2 - A single-level-resist process was used to fabricate GaAs MESFETs with gate lengths as short as 28 nm on MBE grown epi-layers. D.C. measurements yielded transconductances up to 85 mS/mm with no dependence on gate length.

AB - A single-level-resist process was used to fabricate GaAs MESFETs with gate lengths as short as 28 nm on MBE grown epi-layers. D.C. measurements yielded transconductances up to 85 mS/mm with no dependence on gate length.

UR - http://www.scopus.com/inward/record.url?scp=0022289024&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022289024&partnerID=8YFLogxK

U2 - 10.1016/0749-6036(86)90079-0

DO - 10.1016/0749-6036(86)90079-0

M3 - Article

AN - SCOPUS:0022289024

SN - 0749-6036

VL - 2

SP - 147

EP - 150

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2

ER -

Electron beam lithographic fabrication of ultra-submicron gate GaAs MESFETs

Abstract

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