Electron beam lithographic fabrication of ultra-submicron gate GaAs MESFETs

G. Bernstein, D. K. Ferry

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

A single-level-resist process was used to fabricate GaAs MESFETs with gate lengths as short as 28 nm on MBE grown epi-layers. D.C. measurements yielded transconductances up to 85 mS/mm with no dependence on gate length.

Original languageEnglish (US)
Pages (from-to)147-150
Number of pages4
JournalSuperlattices and Microstructures
Volume2
Issue number2
DOIs
StatePublished - 1986

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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