Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Yuh Shiuan Liu; A. F M Saniul Haq; Tsung Ting Kao; Karan Mehta; Shyh Chiang Shen; Theeradetch Detchprohm; P. Douglas Yoder; Russell D. Dupuis; Hongen Xie; Fernando Ponce

doi:10.1016/j.jcrysgro.2016.03.027

Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Yuh Shiuan Liu, A. F M Saniul Haq, Tsung Ting Kao, Karan Mehta, Shyh Chiang Shen, Theeradetch Detchprohm, P. Douglas Yoder, Russell D. Dupuis, Hongen Xie, Fernando Ponce

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17 Scopus citations

Abstract

We report an electrically conducting 40-pair silicon doped Al_0.12Ga_0.88N/GaN distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition on a silicon doped n-type GaN template. Due to the relatively small lattice mismatch between AlGaN and GaN, strain managing layers are not required for crack-free n-DBR growth. The DBR demonstrates a peak reflectivity of 91.6% at 368 nm with stopband of 11 nm. In addition, the 40-pair n-DBR shows the vertical resistance of 5.5 Ω, which corresponds to bulk resistivity of 0.52 Ω cm, near the maximum measured current of 100 mA.

Original language	English (US)
Pages (from-to)	81-84
Number of pages	4
Journal	Journal of Crystal Growth
Volume	443
DOIs	https://doi.org/10.1016/j.jcrysgro.2016.03.027
State	Published - Jun 1 2016

Keywords

A2. Metalorganic chemical vapor deposition
B1. Nitride
B2. Semiconductor III-V materials
B3. Laser diodes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2016.03.027

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@article{4b645c98013b4f2db0ee403912819c07,

title = "Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition",

abstract = "We report an electrically conducting 40-pair silicon doped Al0.12Ga0.88N/GaN distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition on a silicon doped n-type GaN template. Due to the relatively small lattice mismatch between AlGaN and GaN, strain managing layers are not required for crack-free n-DBR growth. The DBR demonstrates a peak reflectivity of 91.6% at 368 nm with stopband of 11 nm. In addition, the 40-pair n-DBR shows the vertical resistance of 5.5 Ω, which corresponds to bulk resistivity of 0.52 Ω cm, near the maximum measured current of 100 mA.",

keywords = "A2. Metalorganic chemical vapor deposition, B1. Nitride, B2. Semiconductor III-V materials, B3. Laser diodes",

author = "Liu, {Yuh Shiuan} and Haq, {A. F M Saniul} and Kao, {Tsung Ting} and Karan Mehta and Shen, {Shyh Chiang} and Theeradetch Detchprohm and Yoder, {P. Douglas} and Dupuis, {Russell D.} and Hongen Xie and Fernando Ponce",

note = "Funding Information: This work is supported by the Defense Advanced Research Projects Agency under Contract # W911NF-15-1-0026 . RDD acknowledges additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance . Publisher Copyright: {\textcopyright} 2016 Elsevier B.V. All rights reserved.",

year = "2016",

month = jun,

day = "1",

doi = "10.1016/j.jcrysgro.2016.03.027",

language = "English (US)",

volume = "443",

pages = "81--84",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

AU - Liu, Yuh Shiuan

AU - Haq, A. F M Saniul

AU - Kao, Tsung Ting

AU - Mehta, Karan

AU - Shen, Shyh Chiang

AU - Detchprohm, Theeradetch

AU - Yoder, P. Douglas

AU - Dupuis, Russell D.

AU - Xie, Hongen

AU - Ponce, Fernando

N1 - Funding Information: This work is supported by the Defense Advanced Research Projects Agency under Contract # W911NF-15-1-0026 . RDD acknowledges additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance . Publisher Copyright: © 2016 Elsevier B.V. All rights reserved.

PY - 2016/6/1

Y1 - 2016/6/1

N2 - We report an electrically conducting 40-pair silicon doped Al0.12Ga0.88N/GaN distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition on a silicon doped n-type GaN template. Due to the relatively small lattice mismatch between AlGaN and GaN, strain managing layers are not required for crack-free n-DBR growth. The DBR demonstrates a peak reflectivity of 91.6% at 368 nm with stopband of 11 nm. In addition, the 40-pair n-DBR shows the vertical resistance of 5.5 Ω, which corresponds to bulk resistivity of 0.52 Ω cm, near the maximum measured current of 100 mA.

AB - We report an electrically conducting 40-pair silicon doped Al0.12Ga0.88N/GaN distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition on a silicon doped n-type GaN template. Due to the relatively small lattice mismatch between AlGaN and GaN, strain managing layers are not required for crack-free n-DBR growth. The DBR demonstrates a peak reflectivity of 91.6% at 368 nm with stopband of 11 nm. In addition, the 40-pair n-DBR shows the vertical resistance of 5.5 Ω, which corresponds to bulk resistivity of 0.52 Ω cm, near the maximum measured current of 100 mA.

KW - A2. Metalorganic chemical vapor deposition

KW - B1. Nitride

KW - B2. Semiconductor III-V materials

KW - B3. Laser diodes

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U2 - 10.1016/j.jcrysgro.2016.03.027

DO - 10.1016/j.jcrysgro.2016.03.027

M3 - Article

AN - SCOPUS:84962032955

SN - 0022-0248

VL - 443

SP - 81

EP - 84

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

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Keywords

ASJC Scopus subject areas

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