Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Yuh Shiuan Liu, A. F M Saniul Haq, Tsung Ting Kao, Karan Mehta, Shyh Chiang Shen, Theeradetch Detchprohm, P. Douglas Yoder, Russell D. Dupuis, Hongen Xie, Fernando Ponce

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

We report an electrically conducting 40-pair silicon doped Al0.12Ga0.88N/GaN distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition on a silicon doped n-type GaN template. Due to the relatively small lattice mismatch between AlGaN and GaN, strain managing layers are not required for crack-free n-DBR growth. The DBR demonstrates a peak reflectivity of 91.6% at 368 nm with stopband of 11 nm. In addition, the 40-pair n-DBR shows the vertical resistance of 5.5 Ω, which corresponds to bulk resistivity of 0.52 Ω cm, near the maximum measured current of 100 mA.

Original languageEnglish (US)
Pages (from-to)81-84
Number of pages4
JournalJournal of Crystal Growth
Volume443
DOIs
StatePublished - Jun 1 2016

Keywords

  • A2. Metalorganic chemical vapor deposition
  • B1. Nitride
  • B2. Semiconductor III-V materials
  • B3. Laser diodes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Liu, Y. S., Haq, A. F. M. S., Kao, T. T., Mehta, K., Shen, S. C., Detchprohm, T., Yoder, P. D., Dupuis, R. D., Xie, H., & Ponce, F. (2016). Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition. Journal of Crystal Growth, 443, 81-84. https://doi.org/10.1016/j.jcrysgro.2016.03.027