Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Yuh Shiuan Liu, A. F M Saniul Haq, Tsung Ting Kao, Karan Mehta, Shyh Chiang Shen, Theeradetch Detchprohm, P. Douglas Yoder, Russell D. Dupuis, Hongen Xie, Fernando Ponce

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report an electrically conducting 40-pair silicon doped Al0.12Ga0.88N/GaN distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition on a silicon doped n-type GaN template. Due to the relatively small lattice mismatch between AlGaN and GaN, strain managing layers are not required for crack-free n-DBR growth. The DBR demonstrates a peak reflectivity of 91.6% at 368 nm with stopband of 11 nm. In addition, the 40-pair n-DBR shows the vertical resistance of 5.5 Ω, which corresponds to bulk resistivity of 0.52 Ω cm, near the maximum measured current of 100 mA.

Original languageEnglish (US)
Pages (from-to)81-84
Number of pages4
JournalJournal of Crystal Growth
Volume443
DOIs
StatePublished - Jun 1 2016

Fingerprint

Distributed Bragg reflectors
Metallorganic chemical vapor deposition
Bragg reflectors
metalorganic chemical vapor deposition
conduction
Silicon
Lattice mismatch
silicon
templates
cracks
Cracks
reflectance
electrical resistivity
aluminum gallium nitride

Keywords

  • A2. Metalorganic chemical vapor deposition
  • B1. Nitride
  • B2. Semiconductor III-V materials
  • B3. Laser diodes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition. / Liu, Yuh Shiuan; Haq, A. F M Saniul; Kao, Tsung Ting; Mehta, Karan; Shen, Shyh Chiang; Detchprohm, Theeradetch; Yoder, P. Douglas; Dupuis, Russell D.; Xie, Hongen; Ponce, Fernando.

In: Journal of Crystal Growth, Vol. 443, 01.06.2016, p. 81-84.

Research output: Contribution to journalArticle

Liu, Yuh Shiuan ; Haq, A. F M Saniul ; Kao, Tsung Ting ; Mehta, Karan ; Shen, Shyh Chiang ; Detchprohm, Theeradetch ; Yoder, P. Douglas ; Dupuis, Russell D. ; Xie, Hongen ; Ponce, Fernando. / Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition. In: Journal of Crystal Growth. 2016 ; Vol. 443. pp. 81-84.
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abstract = "We report an electrically conducting 40-pair silicon doped Al0.12Ga0.88N/GaN distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition on a silicon doped n-type GaN template. Due to the relatively small lattice mismatch between AlGaN and GaN, strain managing layers are not required for crack-free n-DBR growth. The DBR demonstrates a peak reflectivity of 91.6{\%} at 368 nm with stopband of 11 nm. In addition, the 40-pair n-DBR shows the vertical resistance of 5.5 Ω, which corresponds to bulk resistivity of 0.52 Ω cm, near the maximum measured current of 100 mA.",
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AU - Liu, Yuh Shiuan

AU - Haq, A. F M Saniul

AU - Kao, Tsung Ting

AU - Mehta, Karan

AU - Shen, Shyh Chiang

AU - Detchprohm, Theeradetch

AU - Yoder, P. Douglas

AU - Dupuis, Russell D.

AU - Xie, Hongen

AU - Ponce, Fernando

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N2 - We report an electrically conducting 40-pair silicon doped Al0.12Ga0.88N/GaN distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition on a silicon doped n-type GaN template. Due to the relatively small lattice mismatch between AlGaN and GaN, strain managing layers are not required for crack-free n-DBR growth. The DBR demonstrates a peak reflectivity of 91.6% at 368 nm with stopband of 11 nm. In addition, the 40-pair n-DBR shows the vertical resistance of 5.5 Ω, which corresponds to bulk resistivity of 0.52 Ω cm, near the maximum measured current of 100 mA.

AB - We report an electrically conducting 40-pair silicon doped Al0.12Ga0.88N/GaN distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition on a silicon doped n-type GaN template. Due to the relatively small lattice mismatch between AlGaN and GaN, strain managing layers are not required for crack-free n-DBR growth. The DBR demonstrates a peak reflectivity of 91.6% at 368 nm with stopband of 11 nm. In addition, the 40-pair n-DBR shows the vertical resistance of 5.5 Ω, which corresponds to bulk resistivity of 0.52 Ω cm, near the maximum measured current of 100 mA.

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