Electrical study of Schottky barrier heights on atomically clean and air-exposed n-InP(110) surfaces

Nathan Newman, T. Kendelewicz, L. Bowman, W. E. Spicer

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Abstract

We report here a systematic study of the electronic properties of Schottky barrier diodes fabricated on atomically clean, as well as air-exposed n-InP (110) surfaces. Using the current-voltage (I-V) measuring technique, we found the barrier heights of 0.33 eV for Ni, Al, Sn, Mn, 0.43 eV for Pd, Cu, Au, Cr, and 0.54 eV for Ag. Contrary to earlier reports based on a limited amount of data, the results of this study do not show a simple relationship between the chemical reactivity and the Schottky barrier height. The large differences between the electrical characteristics of diodes prepared on clean surfaces and those prepared on air-exposed surfaces were also not found.

Original languageEnglish (US)
Pages (from-to)1176-1178
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number12
DOIs
StatePublished - 1985
Externally publishedYes

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air
Schottky diodes
reactivity
diodes
electric potential
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Electrical study of Schottky barrier heights on atomically clean and air-exposed n-InP(110) surfaces. / Newman, Nathan; Kendelewicz, T.; Bowman, L.; Spicer, W. E.

In: Applied Physics Letters, Vol. 46, No. 12, 1985, p. 1176-1178.

Research output: Contribution to journalArticle

Newman, Nathan ; Kendelewicz, T. ; Bowman, L. ; Spicer, W. E. / Electrical study of Schottky barrier heights on atomically clean and air-exposed n-InP(110) surfaces. In: Applied Physics Letters. 1985 ; Vol. 46, No. 12. pp. 1176-1178.
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