Electrical and structural properties of zirconium germanosilicide formed by a bilayer solid state reaction of Zr with strained Si1-xGex alloys

Z. Wang; D. B. Aldrich; R. J. Nemanich; D. E. Sayers

doi:10.1063/1.366043

Electrical and structural properties of zirconium germanosilicide formed by a bilayer solid state reaction of Zr with strained Si_1-xGe_x alloys

Z. Wang, D. B. Aldrich, R. J. Nemanich, D. E. Sayers

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Abstract

The effects of alloy composition on the electrical and structural properties of zirconium germanosilicide (Zr-Si-Ge) films formed during the Zr/Si_1-xGe_x solid state reaction were investigated. Thin films of Zr(Si_1-yGe_y) and C49 Zr(Si_1-yGe_y)₂ were formed from the solid phase reaction of Zr and Si_1-xGe_x bilayer structures. The thicknesses of the Zr and Si_1-xGe_x layers were 100 and 500 Å, respectively. It was observed that Zr reacts uniformly with the Si_1-xGe_x alloy and that C49 Zr(Si_1-yGe_y)₂ with y = x is the final phase of the Zr/Si_1-xGe_x solid phase reaction for all compositions examined. The sheet resistance of the Zr(Si_1-yGe_y)₂ thin films was higher than the sheet resistance of similarly prepared ZrSi₂ films. The stability of Zr(Si_1-yGe_y)₂ in contact with Si_1-xGe_x was investigated and compared to the stability of Ti(Si_1-yGe_y)₂ in contact with Si_1-xGe_x. The Ti(Si_1-yGe_y)₂/Si_1-xGe_x structure is unstable when annealed for 10 min at 700°C, with Ge segregating from Ti(Si_1-yGe_y)₂ and forming Ge-rich Si_1-zGe_z precipitates at grain boundaries. In contrast, no Ge segregation was detected in the Zr(Si_1-yGe_y)₂/Si_1-xGe_x structures. We attribute the stability of the Zr-based structure to a smaller thermodynamic driving force for germanium segregation and stronger atomic bonding in C49 Zr(Si_1-yGe_y)₂. Classical thermodynamics were used to calculate Zr(Si_1-yG_y)₂-Si_1-xGe_x tie lines in the Zr-Si-Ge ternary phase diagram. The calculations were compared with previously calculated Ti(Si_1-yGe_y)₂-Si_1-xGe_x tie lines.

Original language	English (US)
Pages (from-to)	2342-2348
Number of pages	7
Journal	Journal of Applied Physics
Volume	82
Issue number	5
DOIs	https://doi.org/10.1063/1.366043
State	Published - Sep 1 1997
Externally published	Yes

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General Physics and Astronomy

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10.1063/1.366043

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@article{594fdc234f1b41feb7e1d251b6c6677c,

title = "Electrical and structural properties of zirconium germanosilicide formed by a bilayer solid state reaction of Zr with strained Si1-xGex alloys",

abstract = "The effects of alloy composition on the electrical and structural properties of zirconium germanosilicide (Zr-Si-Ge) films formed during the Zr/Si1-xGex solid state reaction were investigated. Thin films of Zr(Si1-yGey) and C49 Zr(Si1-yGey)2 were formed from the solid phase reaction of Zr and Si1-xGex bilayer structures. The thicknesses of the Zr and Si1-xGex layers were 100 and 500 {\AA}, respectively. It was observed that Zr reacts uniformly with the Si1-xGex alloy and that C49 Zr(Si1-yGey)2 with y = x is the final phase of the Zr/Si1-xGex solid phase reaction for all compositions examined. The sheet resistance of the Zr(Si1-yGey)2 thin films was higher than the sheet resistance of similarly prepared ZrSi2 films. The stability of Zr(Si1-yGey)2 in contact with Si1-xGex was investigated and compared to the stability of Ti(Si1-yGey)2 in contact with Si1-xGex. The Ti(Si1-yGey)2/Si1-xGex structure is unstable when annealed for 10 min at 700°C, with Ge segregating from Ti(Si1-yGey)2 and forming Ge-rich Si1-zGez precipitates at grain boundaries. In contrast, no Ge segregation was detected in the Zr(Si1-yGey)2/Si1-xGex structures. We attribute the stability of the Zr-based structure to a smaller thermodynamic driving force for germanium segregation and stronger atomic bonding in C49 Zr(Si1-yGey)2. Classical thermodynamics were used to calculate Zr(Si1-yGy)2-Si1-xGex tie lines in the Zr-Si-Ge ternary phase diagram. The calculations were compared with previously calculated Ti(Si1-yGey)2-Si1-xGex tie lines.",

author = "Z. Wang and Aldrich, {D. B.} and Nemanich, {R. J.} and Sayers, {D. E.}",

year = "1997",

month = sep,

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doi = "10.1063/1.366043",

language = "English (US)",

volume = "82",

pages = "2342--2348",

journal = "Journal of Applied Physics",

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T1 - Electrical and structural properties of zirconium germanosilicide formed by a bilayer solid state reaction of Zr with strained Si1-xGex alloys

AU - Wang, Z.

AU - Aldrich, D. B.

AU - Nemanich, R. J.

AU - Sayers, D. E.

PY - 1997/9/1

Y1 - 1997/9/1

N2 - The effects of alloy composition on the electrical and structural properties of zirconium germanosilicide (Zr-Si-Ge) films formed during the Zr/Si1-xGex solid state reaction were investigated. Thin films of Zr(Si1-yGey) and C49 Zr(Si1-yGey)2 were formed from the solid phase reaction of Zr and Si1-xGex bilayer structures. The thicknesses of the Zr and Si1-xGex layers were 100 and 500 Å, respectively. It was observed that Zr reacts uniformly with the Si1-xGex alloy and that C49 Zr(Si1-yGey)2 with y = x is the final phase of the Zr/Si1-xGex solid phase reaction for all compositions examined. The sheet resistance of the Zr(Si1-yGey)2 thin films was higher than the sheet resistance of similarly prepared ZrSi2 films. The stability of Zr(Si1-yGey)2 in contact with Si1-xGex was investigated and compared to the stability of Ti(Si1-yGey)2 in contact with Si1-xGex. The Ti(Si1-yGey)2/Si1-xGex structure is unstable when annealed for 10 min at 700°C, with Ge segregating from Ti(Si1-yGey)2 and forming Ge-rich Si1-zGez precipitates at grain boundaries. In contrast, no Ge segregation was detected in the Zr(Si1-yGey)2/Si1-xGex structures. We attribute the stability of the Zr-based structure to a smaller thermodynamic driving force for germanium segregation and stronger atomic bonding in C49 Zr(Si1-yGey)2. Classical thermodynamics were used to calculate Zr(Si1-yGy)2-Si1-xGex tie lines in the Zr-Si-Ge ternary phase diagram. The calculations were compared with previously calculated Ti(Si1-yGey)2-Si1-xGex tie lines.

AB - The effects of alloy composition on the electrical and structural properties of zirconium germanosilicide (Zr-Si-Ge) films formed during the Zr/Si1-xGex solid state reaction were investigated. Thin films of Zr(Si1-yGey) and C49 Zr(Si1-yGey)2 were formed from the solid phase reaction of Zr and Si1-xGex bilayer structures. The thicknesses of the Zr and Si1-xGex layers were 100 and 500 Å, respectively. It was observed that Zr reacts uniformly with the Si1-xGex alloy and that C49 Zr(Si1-yGey)2 with y = x is the final phase of the Zr/Si1-xGex solid phase reaction for all compositions examined. The sheet resistance of the Zr(Si1-yGey)2 thin films was higher than the sheet resistance of similarly prepared ZrSi2 films. The stability of Zr(Si1-yGey)2 in contact with Si1-xGex was investigated and compared to the stability of Ti(Si1-yGey)2 in contact with Si1-xGex. The Ti(Si1-yGey)2/Si1-xGex structure is unstable when annealed for 10 min at 700°C, with Ge segregating from Ti(Si1-yGey)2 and forming Ge-rich Si1-zGez precipitates at grain boundaries. In contrast, no Ge segregation was detected in the Zr(Si1-yGey)2/Si1-xGex structures. We attribute the stability of the Zr-based structure to a smaller thermodynamic driving force for germanium segregation and stronger atomic bonding in C49 Zr(Si1-yGey)2. Classical thermodynamics were used to calculate Zr(Si1-yGy)2-Si1-xGex tie lines in the Zr-Si-Ge ternary phase diagram. The calculations were compared with previously calculated Ti(Si1-yGey)2-Si1-xGex tie lines.

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Electrical and structural properties of zirconium germanosilicide formed by a bilayer solid state reaction of Zr with strained Si_1-xGe_x alloys

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