The radiative limit model, based on the black body theory extended to semiconductors and the flow equilibrium in the cell, has been adapted for GaxIn1-xAs thermophotovoltaic devices. The impact of the thermal emitter temperature and the incident power density on the performance of cells for different Ga/In ratios has been investigated. The effects of the thickness of the cell and of light trapping have been investigated as well. A theoretical maximum efficiency of 24.2% has been calculated for a dislocation-free 5-μm-thick cell with a 0.43 eV bandgap illuminated by a source at 1800 K. The model also takes into account Auger recombinations and threading dislocations-related Shockley-Read-Hall recombinations.
|Original language||English (US)|
|State||Published - Sep 21 2015|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics