Efficiency of GaInAs thermophotovoltaic cells: The effects of incident radiation, light trapping and recombinations

Pamela Jurczak; Arthur Onno; Kimberly Sablon; Huiyun Liu

doi:10.1364/OE.23.0A1208

Efficiency of GaInAs thermophotovoltaic cells: The effects of incident radiation, light trapping and recombinations

Pamela Jurczak, Arthur Onno, Kimberly Sablon, Huiyun Liu

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The radiative limit model, based on the black body theory extended to semiconductors and the flow equilibrium in the cell, has been adapted for Ga_xIn_1-xAs thermophotovoltaic devices. The impact of the thermal emitter temperature and the incident power density on the performance of cells for different Ga/In ratios has been investigated. The effects of the thickness of the cell and of light trapping have been investigated as well. A theoretical maximum efficiency of 24.2% has been calculated for a dislocation-free 5-μm-thick cell with a 0.43 eV bandgap illuminated by a source at 1800 K. The model also takes into account Auger recombinations and threading dislocations-related Shockley-Read-Hall recombinations.

Original language	English (US)
Pages (from-to)	A1208-A1219
Journal	Optics Express
Volume	23
Issue number	19
DOIs	https://doi.org/10.1364/OE.23.0A1208
State	Published - Sep 21 2015
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

Access to Document

10.1364/OE.23.0A1208

Cite this

@article{f9982e2eb6484bb68facc495b7978163,

title = "Efficiency of GaInAs thermophotovoltaic cells: The effects of incident radiation, light trapping and recombinations",

abstract = "The radiative limit model, based on the black body theory extended to semiconductors and the flow equilibrium in the cell, has been adapted for GaxIn1-xAs thermophotovoltaic devices. The impact of the thermal emitter temperature and the incident power density on the performance of cells for different Ga/In ratios has been investigated. The effects of the thickness of the cell and of light trapping have been investigated as well. A theoretical maximum efficiency of 24.2% has been calculated for a dislocation-free 5-μm-thick cell with a 0.43 eV bandgap illuminated by a source at 1800 K. The model also takes into account Auger recombinations and threading dislocations-related Shockley-Read-Hall recombinations.",

author = "Pamela Jurczak and Arthur Onno and Kimberly Sablon and Huiyun Liu",

note = "Publisher Copyright: {\textcopyright} 2015 Optical Society of America.",

year = "2015",

month = sep,

day = "21",

doi = "10.1364/OE.23.0A1208",

language = "English (US)",

volume = "23",

pages = "A1208--A1219",

journal = "Optics Express",

issn = "1094-4087",

publisher = "The Optical Society",

number = "19",

}

TY - JOUR

T1 - Efficiency of GaInAs thermophotovoltaic cells

T2 - The effects of incident radiation, light trapping and recombinations

AU - Jurczak, Pamela

AU - Onno, Arthur

AU - Sablon, Kimberly

AU - Liu, Huiyun

PY - 2015/9/21

Y1 - 2015/9/21

N2 - The radiative limit model, based on the black body theory extended to semiconductors and the flow equilibrium in the cell, has been adapted for GaxIn1-xAs thermophotovoltaic devices. The impact of the thermal emitter temperature and the incident power density on the performance of cells for different Ga/In ratios has been investigated. The effects of the thickness of the cell and of light trapping have been investigated as well. A theoretical maximum efficiency of 24.2% has been calculated for a dislocation-free 5-μm-thick cell with a 0.43 eV bandgap illuminated by a source at 1800 K. The model also takes into account Auger recombinations and threading dislocations-related Shockley-Read-Hall recombinations.

AB - The radiative limit model, based on the black body theory extended to semiconductors and the flow equilibrium in the cell, has been adapted for GaxIn1-xAs thermophotovoltaic devices. The impact of the thermal emitter temperature and the incident power density on the performance of cells for different Ga/In ratios has been investigated. The effects of the thickness of the cell and of light trapping have been investigated as well. A theoretical maximum efficiency of 24.2% has been calculated for a dislocation-free 5-μm-thick cell with a 0.43 eV bandgap illuminated by a source at 1800 K. The model also takes into account Auger recombinations and threading dislocations-related Shockley-Read-Hall recombinations.

UR - http://www.scopus.com/inward/record.url?scp=84943618266&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84943618266&partnerID=8YFLogxK

U2 - 10.1364/OE.23.0A1208

DO - 10.1364/OE.23.0A1208

M3 - Article

AN - SCOPUS:84943618266

SN - 1094-4087

VL - 23

SP - A1208-A1219

JO - Optics Express

JF - Optics Express

IS - 19

ER -

Efficiency of GaInAs thermophotovoltaic cells: The effects of incident radiation, light trapping and recombinations

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this