Efficiency of GaInAs thermophotovoltaic cells: The effects of incident radiation, light trapping and recombinations

Pamela Jurczak, Arthur Onno, Kimberly Sablon, Huiyun Liu

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The radiative limit model, based on the black body theory extended to semiconductors and the flow equilibrium in the cell, has been adapted for GaxIn1-xAs thermophotovoltaic devices. The impact of the thermal emitter temperature and the incident power density on the performance of cells for different Ga/In ratios has been investigated. The effects of the thickness of the cell and of light trapping have been investigated as well. A theoretical maximum efficiency of 24.2% has been calculated for a dislocation-free 5-μm-thick cell with a 0.43 eV bandgap illuminated by a source at 1800 K. The model also takes into account Auger recombinations and threading dislocations-related Shockley-Read-Hall recombinations.

Original languageEnglish (US)
Pages (from-to)A1208-A1219
JournalOptics Express
Volume23
Issue number19
DOIs
StatePublished - Sep 21 2015
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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