Abstract

The structural characteristics and device performance of strain-compensated InAs/GaAsSb quantum dot solar cells (QDSCs) with different GaP coverages have been studied. The in-plane (out-of-plane) compressive strain of the QD stacks is reduced from -1.24 (+1.06) to -0.39 (+0.33)% by increasing the GaP coverage from 0 to 4 ML. This strain compensation decreases strain-induced dislocation density and hence enhances the overall crystal quality of the QDSCs. The external quantum efficiency spectra reveal that the increase in the GaP coverage increases the photocurrent from wavelengths shorter than GaAs bandedge of 880 nm, while it decreases the photocurrent from near infrared wavelengths beyond the bandedge. The conversion efficiency of the QDSCs is significantly improved from 7.22 to 9.67% as the GaP coverage is increased from 0 to 4 ML.

Original languageEnglish (US)
Article number103104
JournalApplied Physics Letters
Volume108
Issue number10
DOIs
StatePublished - Mar 7 2016

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solar cells
quantum dots
photocurrents
augmentation
wavelengths
quantum efficiency
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer. / Kim, Yeongho; Ban, Keun Yong; Zhang, Chaomin; Kim, Jun Oh; Lee, Sang Jun; Honsberg, Christiana.

In: Applied Physics Letters, Vol. 108, No. 10, 103104, 07.03.2016.

Research output: Contribution to journalArticle

Kim, Yeongho ; Ban, Keun Yong ; Zhang, Chaomin ; Kim, Jun Oh ; Lee, Sang Jun ; Honsberg, Christiana. / Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer. In: Applied Physics Letters. 2016 ; Vol. 108, No. 10.
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AU - Honsberg, Christiana

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