Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer

Yeongho Kim; Keun Yong Ban; Chaomin Zhang; Jun Oh Kim; Sang Jun Lee; Christiana Honsberg

doi:10.1063/1.4943182

Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer

Yeongho Kim, Keun Yong Ban, Chaomin Zhang, Jun Oh Kim, Sang Jun Lee, Christiana Honsberg

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The structural characteristics and device performance of strain-compensated InAs/GaAsSb quantum dot solar cells (QDSCs) with different GaP coverages have been studied. The in-plane (out-of-plane) compressive strain of the QD stacks is reduced from -1.24 (+1.06) to -0.39 (+0.33)% by increasing the GaP coverage from 0 to 4 ML. This strain compensation decreases strain-induced dislocation density and hence enhances the overall crystal quality of the QDSCs. The external quantum efficiency spectra reveal that the increase in the GaP coverage increases the photocurrent from wavelengths shorter than GaAs bandedge of 880 nm, while it decreases the photocurrent from near infrared wavelengths beyond the bandedge. The conversion efficiency of the QDSCs is significantly improved from 7.22 to 9.67% as the GaP coverage is increased from 0 to 4 ML.

Original language	English (US)
Article number	103104
Journal	Applied Physics Letters
Volume	108
Issue number	10
DOIs	https://doi.org/10.1063/1.4943182
State	Published - Mar 7 2016

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4943182

Cite this

@article{d8e02f4cb40f4470834b8a164137d936,

title = "Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer",

abstract = "The structural characteristics and device performance of strain-compensated InAs/GaAsSb quantum dot solar cells (QDSCs) with different GaP coverages have been studied. The in-plane (out-of-plane) compressive strain of the QD stacks is reduced from -1.24 (+1.06) to -0.39 (+0.33)% by increasing the GaP coverage from 0 to 4 ML. This strain compensation decreases strain-induced dislocation density and hence enhances the overall crystal quality of the QDSCs. The external quantum efficiency spectra reveal that the increase in the GaP coverage increases the photocurrent from wavelengths shorter than GaAs bandedge of 880 nm, while it decreases the photocurrent from near infrared wavelengths beyond the bandedge. The conversion efficiency of the QDSCs is significantly improved from 7.22 to 9.67% as the GaP coverage is increased from 0 to 4 ML.",

author = "Yeongho Kim and Ban, {Keun Yong} and Chaomin Zhang and Kim, {Jun Oh} and Lee, {Sang Jun} and Christiana Honsberg",

note = "Funding Information: This material is based upon work primarily supported by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA No. EEC-1041895. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of NSF or DOE. The authors gratefully acknowledge the use of facilities within the LeRoy Eyring Center for Solid State Science at Arizona State University. Publisher Copyright: {\textcopyright} 2016 AIP Publishing LLC.",

year = "2016",

month = mar,

day = "7",

doi = "10.1063/1.4943182",

language = "English (US)",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer

AU - Kim, Yeongho

AU - Ban, Keun Yong

AU - Zhang, Chaomin

AU - Kim, Jun Oh

AU - Lee, Sang Jun

AU - Honsberg, Christiana

N1 - Funding Information: This material is based upon work primarily supported by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA No. EEC-1041895. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of NSF or DOE. The authors gratefully acknowledge the use of facilities within the LeRoy Eyring Center for Solid State Science at Arizona State University. Publisher Copyright: © 2016 AIP Publishing LLC.

PY - 2016/3/7

Y1 - 2016/3/7

N2 - The structural characteristics and device performance of strain-compensated InAs/GaAsSb quantum dot solar cells (QDSCs) with different GaP coverages have been studied. The in-plane (out-of-plane) compressive strain of the QD stacks is reduced from -1.24 (+1.06) to -0.39 (+0.33)% by increasing the GaP coverage from 0 to 4 ML. This strain compensation decreases strain-induced dislocation density and hence enhances the overall crystal quality of the QDSCs. The external quantum efficiency spectra reveal that the increase in the GaP coverage increases the photocurrent from wavelengths shorter than GaAs bandedge of 880 nm, while it decreases the photocurrent from near infrared wavelengths beyond the bandedge. The conversion efficiency of the QDSCs is significantly improved from 7.22 to 9.67% as the GaP coverage is increased from 0 to 4 ML.

AB - The structural characteristics and device performance of strain-compensated InAs/GaAsSb quantum dot solar cells (QDSCs) with different GaP coverages have been studied. The in-plane (out-of-plane) compressive strain of the QD stacks is reduced from -1.24 (+1.06) to -0.39 (+0.33)% by increasing the GaP coverage from 0 to 4 ML. This strain compensation decreases strain-induced dislocation density and hence enhances the overall crystal quality of the QDSCs. The external quantum efficiency spectra reveal that the increase in the GaP coverage increases the photocurrent from wavelengths shorter than GaAs bandedge of 880 nm, while it decreases the photocurrent from near infrared wavelengths beyond the bandedge. The conversion efficiency of the QDSCs is significantly improved from 7.22 to 9.67% as the GaP coverage is increased from 0 to 4 ML.

UR - http://www.scopus.com/inward/record.url?scp=84960400889&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84960400889&partnerID=8YFLogxK

U2 - 10.1063/1.4943182

DO - 10.1063/1.4943182

M3 - Article

AN - SCOPUS:84960400889

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103104

ER -

Efficiency enhancement in InAs/GaAsSb quantum dot solar cells with GaP strain compensation layer

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this