EFFECTS OF PROCESS CHEMICAL PURITY ON MOS CAPACITOR ELECTRICAL PARAMETERS.

Ian G. McGillivray, John M. Robertson, Anthony J. Walton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

MOS grade chemicals are supplied with extensive specifications which mean little to the integrated circuit fabricator since there is no indication as to which impurities are important and what type of degradations may occur. The electrical effects of iron, chromium and calcium are assessed with MOS capacitors. The elements are added as trace quantities to 5% HF which is used as the final step in a pre-oxidation clean. It is shown that the addition of Ca has no measureable effect while Fe causes a high fixed oxide charge density and high level of mobile ions whereas Cr causes a lowering of minority carrier generation lifetime.

Original languageEnglish (US)
Title of host publicationProceedings - The Electrochemical Society
EditorsHoward R. Huff, Takao Abe, Bernd Kolbesen
PublisherElectrochemical Soc
Pages999-1010
Number of pages12
Volume86-4
StatePublished - 1986
Externally publishedYes

Fingerprint

MOS capacitors
Charge density
Integrated circuits
Calcium
Chromium
Impurities
Iron
Specifications
Degradation
Oxidation
Oxides
Ions

ASJC Scopus subject areas

  • Engineering(all)

Cite this

McGillivray, I. G., Robertson, J. M., & Walton, A. J. (1986). EFFECTS OF PROCESS CHEMICAL PURITY ON MOS CAPACITOR ELECTRICAL PARAMETERS. In H. R. Huff, T. Abe, & B. Kolbesen (Eds.), Proceedings - The Electrochemical Society (Vol. 86-4, pp. 999-1010). Electrochemical Soc.

EFFECTS OF PROCESS CHEMICAL PURITY ON MOS CAPACITOR ELECTRICAL PARAMETERS. / McGillivray, Ian G.; Robertson, John M.; Walton, Anthony J.

Proceedings - The Electrochemical Society. ed. / Howard R. Huff; Takao Abe; Bernd Kolbesen. Vol. 86-4 Electrochemical Soc, 1986. p. 999-1010.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

McGillivray, IG, Robertson, JM & Walton, AJ 1986, EFFECTS OF PROCESS CHEMICAL PURITY ON MOS CAPACITOR ELECTRICAL PARAMETERS. in HR Huff, T Abe & B Kolbesen (eds), Proceedings - The Electrochemical Society. vol. 86-4, Electrochemical Soc, pp. 999-1010.
McGillivray IG, Robertson JM, Walton AJ. EFFECTS OF PROCESS CHEMICAL PURITY ON MOS CAPACITOR ELECTRICAL PARAMETERS. In Huff HR, Abe T, Kolbesen B, editors, Proceedings - The Electrochemical Society. Vol. 86-4. Electrochemical Soc. 1986. p. 999-1010
McGillivray, Ian G. ; Robertson, John M. ; Walton, Anthony J. / EFFECTS OF PROCESS CHEMICAL PURITY ON MOS CAPACITOR ELECTRICAL PARAMETERS. Proceedings - The Electrochemical Society. editor / Howard R. Huff ; Takao Abe ; Bernd Kolbesen. Vol. 86-4 Electrochemical Soc, 1986. pp. 999-1010
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