Effects of passivating ionic films on the photoluminescence properties of GaAs

B. J. Skromme, C. J. Sandroff, E. Yablonovitch, T. Gmitter

Research output: Contribution to journalArticle

179 Scopus citations

Abstract

The passivating effects of spin-coated films of Na2S9H 2O on GaAs surfaces have been studied using room-temperature photoluminescence (PL) and low-temperature PL spectroscopy. After passivation, the 300 K PL efficiency is increased on both n- and p-type material; improvements of up to 2800× are observed. The surface field and surface recombination-related notch features in the free and bound exciton emission spectra at low temperature are eliminated, implying that the residual band bending under illumination is less than 0.15 V.

Original languageEnglish (US)
Pages (from-to)2022-2024
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number24
DOIs
StatePublished - Dec 1 1987
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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