Effects of passivating ionic films on the photoluminescence properties of GaAs

Brian Skromme, C. J. Sandroff, E. Yablonovitch, T. Gmitter

Research output: Contribution to journalArticle

177 Citations (Scopus)

Abstract

The passivating effects of spin-coated films of Na2S9H 2O on GaAs surfaces have been studied using room-temperature photoluminescence (PL) and low-temperature PL spectroscopy. After passivation, the 300 K PL efficiency is increased on both n- and p-type material; improvements of up to 2800× are observed. The surface field and surface recombination-related notch features in the free and bound exciton emission spectra at low temperature are eliminated, implying that the residual band bending under illumination is less than 0.15 V.

Original languageEnglish (US)
Pages (from-to)2022-2024
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number24
DOIs
StatePublished - 1987
Externally publishedYes

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photoluminescence
notches
passivity
emission spectra
illumination
excitons
room temperature
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Effects of passivating ionic films on the photoluminescence properties of GaAs. / Skromme, Brian; Sandroff, C. J.; Yablonovitch, E.; Gmitter, T.

In: Applied Physics Letters, Vol. 51, No. 24, 1987, p. 2022-2024.

Research output: Contribution to journalArticle

Skromme, Brian ; Sandroff, C. J. ; Yablonovitch, E. ; Gmitter, T. / Effects of passivating ionic films on the photoluminescence properties of GaAs. In: Applied Physics Letters. 1987 ; Vol. 51, No. 24. pp. 2022-2024.
@article{77acd1d6b6784785bbcbfa28058dbee6,
title = "Effects of passivating ionic films on the photoluminescence properties of GaAs",
abstract = "The passivating effects of spin-coated films of Na2S9H 2O on GaAs surfaces have been studied using room-temperature photoluminescence (PL) and low-temperature PL spectroscopy. After passivation, the 300 K PL efficiency is increased on both n- and p-type material; improvements of up to 2800× are observed. The surface field and surface recombination-related notch features in the free and bound exciton emission spectra at low temperature are eliminated, implying that the residual band bending under illumination is less than 0.15 V.",
author = "Brian Skromme and Sandroff, {C. J.} and E. Yablonovitch and T. Gmitter",
year = "1987",
doi = "10.1063/1.98280",
language = "English (US)",
volume = "51",
pages = "2022--2024",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "24",

}

TY - JOUR

T1 - Effects of passivating ionic films on the photoluminescence properties of GaAs

AU - Skromme, Brian

AU - Sandroff, C. J.

AU - Yablonovitch, E.

AU - Gmitter, T.

PY - 1987

Y1 - 1987

N2 - The passivating effects of spin-coated films of Na2S9H 2O on GaAs surfaces have been studied using room-temperature photoluminescence (PL) and low-temperature PL spectroscopy. After passivation, the 300 K PL efficiency is increased on both n- and p-type material; improvements of up to 2800× are observed. The surface field and surface recombination-related notch features in the free and bound exciton emission spectra at low temperature are eliminated, implying that the residual band bending under illumination is less than 0.15 V.

AB - The passivating effects of spin-coated films of Na2S9H 2O on GaAs surfaces have been studied using room-temperature photoluminescence (PL) and low-temperature PL spectroscopy. After passivation, the 300 K PL efficiency is increased on both n- and p-type material; improvements of up to 2800× are observed. The surface field and surface recombination-related notch features in the free and bound exciton emission spectra at low temperature are eliminated, implying that the residual band bending under illumination is less than 0.15 V.

UR - http://www.scopus.com/inward/record.url?scp=36549094911&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549094911&partnerID=8YFLogxK

U2 - 10.1063/1.98280

DO - 10.1063/1.98280

M3 - Article

AN - SCOPUS:36549094911

VL - 51

SP - 2022

EP - 2024

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

ER -