Effects of passivating ionic films on the photoluminescence properties of GaAs

B. J. Skromme; C. J. Sandroff; E. Yablonovitch; T. Gmitter

doi:10.1063/1.98280

Effects of passivating ionic films on the photoluminescence properties of GaAs

B. J. Skromme, C. J. Sandroff, E. Yablonovitch, T. Gmitter

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203 Scopus citations

Abstract

The passivating effects of spin-coated films of Na₂S9H ₂O on GaAs surfaces have been studied using room-temperature photoluminescence (PL) and low-temperature PL spectroscopy. After passivation, the 300 K PL efficiency is increased on both n- and p-type material; improvements of up to 2800× are observed. The surface field and surface recombination-related notch features in the free and bound exciton emission spectra at low temperature are eliminated, implying that the residual band bending under illumination is less than 0.15 V.

Original language	English (US)
Pages (from-to)	2022-2024
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	24
DOIs	https://doi.org/10.1063/1.98280
State	Published - 1987
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The passivating effects of spin-coated films of Na2S9H 2O on GaAs surfaces have been studied using room-temperature photoluminescence (PL) and low-temperature PL spectroscopy. After passivation, the 300 K PL efficiency is increased on both n- and p-type material; improvements of up to 2800× are observed. The surface field and surface recombination-related notch features in the free and bound exciton emission spectra at low temperature are eliminated, implying that the residual band bending under illumination is less than 0.15 V.",

author = "Skromme, {B. J.} and Sandroff, {C. J.} and E. Yablonovitch and T. Gmitter",

year = "1987",

doi = "10.1063/1.98280",

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T1 - Effects of passivating ionic films on the photoluminescence properties of GaAs

AU - Skromme, B. J.

AU - Sandroff, C. J.

AU - Yablonovitch, E.

AU - Gmitter, T.

PY - 1987

Y1 - 1987

N2 - The passivating effects of spin-coated films of Na2S9H 2O on GaAs surfaces have been studied using room-temperature photoluminescence (PL) and low-temperature PL spectroscopy. After passivation, the 300 K PL efficiency is increased on both n- and p-type material; improvements of up to 2800× are observed. The surface field and surface recombination-related notch features in the free and bound exciton emission spectra at low temperature are eliminated, implying that the residual band bending under illumination is less than 0.15 V.

AB - The passivating effects of spin-coated films of Na2S9H 2O on GaAs surfaces have been studied using room-temperature photoluminescence (PL) and low-temperature PL spectroscopy. After passivation, the 300 K PL efficiency is increased on both n- and p-type material; improvements of up to 2800× are observed. The surface field and surface recombination-related notch features in the free and bound exciton emission spectra at low temperature are eliminated, implying that the residual band bending under illumination is less than 0.15 V.

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EP - 2024

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Effects of passivating ionic films on the photoluminescence properties of GaAs

Abstract

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