TY - GEN
T1 - Effects of in situ annealing on GaInNAs solar cells
AU - Kurtz, Sarah
AU - King, Richard
AU - Law, Daniel
AU - Ptak, Aaron
AU - Geisz, John
AU - Karam, Nasser
PY - 2013
Y1 - 2013
N2 - GaInNAs solar cells grown by metal-organic, chemical vapor deposition (MOCVD) are known to demonstrate dramatic changes in performance upon annealing. GaInNAs necessarily experiences some in situ annealing when integrated into a multijunction cell, as when the upper four junctions of a six-junction (e.g., AlGaInP/GaInP/AlGaInAs/GaInAs/ GaInNAs/Ge) cell are grown on top of the GaInNAs subcell. Therefore, understanding the changes that occur during these inadvertent, in situ anneals is necessary to design an MOCVD growth process for high-performance six-junction cells. These six-junction cells have the potential for > 50% efficiency under the concentrated terrestrial spectrum and > 40 % under the air mass zero (AM0) spectrum. This paper shows how an in situ anneal at 650°C can cause movement of the junction in the GaInNAs, first improving and then ruining the performance of the cell. Similarly, in situ annealing depends on the annealing temperature, showing, for the conditions studied, optimal performance for an anneal at 675°C. Higher temperatures resulted in improved material quality, but the junction did not move, resulting in inferior performance compared with the samples annealed at lower temperatures. The performance of the best GaInNAs cells is summarized showing background carrier concentrations as low as 2 × 1015 cm -3, depletion widths as wide as ∼ 0.6 μm, and AM0 photocurrents for operation under GaAs approaching 12 mA/cm2.
AB - GaInNAs solar cells grown by metal-organic, chemical vapor deposition (MOCVD) are known to demonstrate dramatic changes in performance upon annealing. GaInNAs necessarily experiences some in situ annealing when integrated into a multijunction cell, as when the upper four junctions of a six-junction (e.g., AlGaInP/GaInP/AlGaInAs/GaInAs/ GaInNAs/Ge) cell are grown on top of the GaInNAs subcell. Therefore, understanding the changes that occur during these inadvertent, in situ anneals is necessary to design an MOCVD growth process for high-performance six-junction cells. These six-junction cells have the potential for > 50% efficiency under the concentrated terrestrial spectrum and > 40 % under the air mass zero (AM0) spectrum. This paper shows how an in situ anneal at 650°C can cause movement of the junction in the GaInNAs, first improving and then ruining the performance of the cell. Similarly, in situ annealing depends on the annealing temperature, showing, for the conditions studied, optimal performance for an anneal at 675°C. Higher temperatures resulted in improved material quality, but the junction did not move, resulting in inferior performance compared with the samples annealed at lower temperatures. The performance of the best GaInNAs cells is summarized showing background carrier concentrations as low as 2 × 1015 cm -3, depletion widths as wide as ∼ 0.6 μm, and AM0 photocurrents for operation under GaAs approaching 12 mA/cm2.
KW - Dilute nitride
KW - III-V
KW - Solar cells
UR - http://www.scopus.com/inward/record.url?scp=84896480410&partnerID=8YFLogxK
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U2 - 10.1109/PVSC.2013.6744887
DO - 10.1109/PVSC.2013.6744887
M3 - Conference contribution
AN - SCOPUS:84896480410
SN - 9781479932993
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2095
EP - 2099
BT - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 39th IEEE Photovoltaic Specialists Conference, PVSC 2013
Y2 - 16 June 2013 through 21 June 2013
ER -