Abstract

The effects of radiation-induced defects and statistical variation in the dose and energy of MOSFET channel implants in a modern bulk CMOS technology are modeled using a process simulator in combination with analytical computations. The model integrates doping profiles obtained from process simulations and experimentally determined defect potentials into implicit surface potential equations. Solutions to these equations are used to model radiation-induced edge leakage currents in 90-nm bulk CMOS n-channel MOSFETs. The results indicate that slight variations in the channel implant parameters can have a significant impact on the doping profile along the shallow trench isolation sidewall and thus the radiation-induced edge leakage currents.

Original languageEnglish (US)
Article number7930407
Pages (from-to)2235-2241
Number of pages7
JournalIEEE Transactions on Nuclear Science
Volume64
Issue number8
DOIs
StatePublished - Aug 2017

Keywords

  • Bulk CMOS
  • process variation
  • radiation-induced defects
  • radiation-induced edge leakage currents
  • total ionizing dose (TID)

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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