Abstract

CBRAM cells were irradiated with 14 MeV neutrons to a total fluence of 3.19×1013 n/cm2. This is the first time that the effect of displacement damage on the DC characteristics of CBRAM has been examined. The high resistance and low resistance states of the cells are shown to converge with increasing neutron fluence. After reaching a fluence of 2.93×1013 n/cm2, the CBRAM cells became irrecoverably locked into their final resistance state.

Original languageEnglish (US)
Title of host publication2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
Volume2016-September
ISBN (Electronic)9781509043668
DOIs
StatePublished - Oct 31 2017
Event16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016 - Bremen, Germany
Duration: Sep 19 2016Sep 23 2016

Other

Other16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016
CountryGermany
CityBremen
Period9/19/169/23/16

Keywords

  • cation
  • CBRAM
  • chalcogenide glass
  • conductive bridging
  • displacement damage
  • ECM
  • electrochemical metallization
  • memristors
  • nanoionic memory
  • neutrons
  • PMC
  • programmable metallization cell
  • radiation effects
  • ReRAM
  • resistive switching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

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    Taggart, J. L., Fang, R., Gonzalez Velo, Y., Barnaby, H., Kozicki, M., Chamele, N., Mahmud, A., & Mitkova, M. (2017). Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells. In 2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016 (Vol. 2016-September, pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RADECS.2016.8093120