Abstract

CBRAM cells were irradiated with 14 MeV neutrons to a total fluence of 3.19×1013 n/cm2. This is the first time that the effect of displacement damage on the DC characteristics of CBRAM has been examined. The high resistance and low resistance states of the cells are shown to converge with increasing neutron fluence. After reaching a fluence of 2.93×1013 n/cm2, the CBRAM cells became irrecoverably locked into their final resistance state.

Original languageEnglish (US)
Title of host publication2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
Volume2016-September
ISBN (Electronic)9781509043668
DOIs
StatePublished - Oct 31 2017
Event16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016 - Bremen, Germany
Duration: Sep 19 2016Sep 23 2016

Other

Other16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016
CountryGermany
CityBremen
Period9/19/169/23/16

Fingerprint

Neutron irradiation
neutron irradiation
Neutrons
fluence
direct current
cells
neutrons
low resistance
high resistance
damage

Keywords

  • cation
  • CBRAM
  • chalcogenide glass
  • conductive bridging
  • displacement damage
  • ECM
  • electrochemical metallization
  • memristors
  • nanoionic memory
  • neutrons
  • PMC
  • programmable metallization cell
  • radiation effects
  • ReRAM
  • resistive switching

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

Cite this

Taggart, J. L., Fang, R., Gonzalez Velo, Y., Barnaby, H., Kozicki, M., Chamele, N., ... Mitkova, M. (2017). Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells. In 2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016 (Vol. 2016-September, pp. 1-4). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RADECS.2016.8093120

Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells. / Taggart, J. L.; Fang, R.; Gonzalez Velo, Yago; Barnaby, Hugh; Kozicki, Michael; Chamele, N.; Mahmud, A.; Mitkova, M.

2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016. Vol. 2016-September Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-4.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Taggart, JL, Fang, R, Gonzalez Velo, Y, Barnaby, H, Kozicki, M, Chamele, N, Mahmud, A & Mitkova, M 2017, Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells. in 2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016. vol. 2016-September, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016, Bremen, Germany, 9/19/16. https://doi.org/10.1109/RADECS.2016.8093120
Taggart JL, Fang R, Gonzalez Velo Y, Barnaby H, Kozicki M, Chamele N et al. Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells. In 2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016. Vol. 2016-September. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-4 https://doi.org/10.1109/RADECS.2016.8093120
Taggart, J. L. ; Fang, R. ; Gonzalez Velo, Yago ; Barnaby, Hugh ; Kozicki, Michael ; Chamele, N. ; Mahmud, A. ; Mitkova, M. / Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells. 2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016. Vol. 2016-September Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1-4
@inproceedings{55f35efc099947b397e6f3cffb351da5,
title = "Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells",
abstract = "CBRAM cells were irradiated with 14 MeV neutrons to a total fluence of 3.19×1013 n/cm2. This is the first time that the effect of displacement damage on the DC characteristics of CBRAM has been examined. The high resistance and low resistance states of the cells are shown to converge with increasing neutron fluence. After reaching a fluence of 2.93×1013 n/cm2, the CBRAM cells became irrecoverably locked into their final resistance state.",
keywords = "cation, CBRAM, chalcogenide glass, conductive bridging, displacement damage, ECM, electrochemical metallization, memristors, nanoionic memory, neutrons, PMC, programmable metallization cell, radiation effects, ReRAM, resistive switching",
author = "Taggart, {J. L.} and R. Fang and {Gonzalez Velo}, Yago and Hugh Barnaby and Michael Kozicki and N. Chamele and A. Mahmud and M. Mitkova",
year = "2017",
month = "10",
day = "31",
doi = "10.1109/RADECS.2016.8093120",
language = "English (US)",
volume = "2016-September",
pages = "1--4",
booktitle = "2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Effects of 14 MeV neutron irradiation on the DC characteristics of CBRAM cells

AU - Taggart, J. L.

AU - Fang, R.

AU - Gonzalez Velo, Yago

AU - Barnaby, Hugh

AU - Kozicki, Michael

AU - Chamele, N.

AU - Mahmud, A.

AU - Mitkova, M.

PY - 2017/10/31

Y1 - 2017/10/31

N2 - CBRAM cells were irradiated with 14 MeV neutrons to a total fluence of 3.19×1013 n/cm2. This is the first time that the effect of displacement damage on the DC characteristics of CBRAM has been examined. The high resistance and low resistance states of the cells are shown to converge with increasing neutron fluence. After reaching a fluence of 2.93×1013 n/cm2, the CBRAM cells became irrecoverably locked into their final resistance state.

AB - CBRAM cells were irradiated with 14 MeV neutrons to a total fluence of 3.19×1013 n/cm2. This is the first time that the effect of displacement damage on the DC characteristics of CBRAM has been examined. The high resistance and low resistance states of the cells are shown to converge with increasing neutron fluence. After reaching a fluence of 2.93×1013 n/cm2, the CBRAM cells became irrecoverably locked into their final resistance state.

KW - cation

KW - CBRAM

KW - chalcogenide glass

KW - conductive bridging

KW - displacement damage

KW - ECM

KW - electrochemical metallization

KW - memristors

KW - nanoionic memory

KW - neutrons

KW - PMC

KW - programmable metallization cell

KW - radiation effects

KW - ReRAM

KW - resistive switching

UR - http://www.scopus.com/inward/record.url?scp=85043586285&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85043586285&partnerID=8YFLogxK

U2 - 10.1109/RADECS.2016.8093120

DO - 10.1109/RADECS.2016.8093120

M3 - Conference contribution

AN - SCOPUS:85043586285

VL - 2016-September

SP - 1

EP - 4

BT - 2016 16th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -